Group 13 nitride semiconductor particle phosphor and method for manufacturing same
A technology of nitride semiconductors and manufacturing methods, applied in chemical instruments and methods, nanostructure manufacturing, luminescent materials, etc., can solve problems such as surface defects, achieve the effects of less surface defects, increased luminous intensity, and fewer steps
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Embodiment 1
[0086] Two kinds of surface-modified organic compounds were used to synthesize by the following method, so that the particle size of the Group 13 nitride nanocrystal particles was 4 nm.
[0087] Hexa(dimethylamino)indium gallium was synthesized through the reactions represented by the aforementioned chemical formulas (1) to (3).
[0088] Furthermore, because of the high reactivity of lithium dimethylamide and the products tris(dimethylamino)indium dimer, tris(dimethylamino)gallium dimer and hexa(dimethylamino)indium gallium, the following The reactions shown were all carried out under nitrogen atmosphere.
[0089] First, 0.03 mol of lithium dimethylamide and 0.01 mol of indium trichloride were weighed in a small tool box (Global Box), and stirred in n-hexane, and reacted at a heating temperature of 20° C. for 50 hours. After completion of the reaction, lithium chloride as a by-product was removed, and tris(dimethylamino)indium dimer (chemical formula (1)) was taken out.
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Embodiment 2
[0105] Using the same manufacturing method as in Example 1, the nanocrystal particles were synthesized as indium gallium nitride mixed crystals, and the nanocrystal particle diameter was 5nm Group 13 nitride semiconductor particle phosphors, and a blue Group 13 phosphor was obtained. The nitride semiconductor particle phosphor is different in that 30 g of trioctylamine is used as the surface modification organic compound. In particular, the obtained Group 13 nitride semiconductor particle phosphor can efficiently absorb light emission at 405 nm, which has a high external quantum efficiency. In addition, the emission wavelength of the nanocrystal particles is 475nm.
[0106]X-ray diffraction measurement result is: when adopting Scherrer formula to estimate, the average particle size (diameter) of the nanocrystal particle estimated by spectral line half-value amplitude is 5nm, and luminous peak intensity and traditional indium nitride semiconductor particle phosphor phase Ratio...
Embodiment 3
[0108] Using the same manufacturing method as in Example 1, the nanocrystal particles are synthesized as indium gallium nitride mixed crystals, and the nanocrystal particle diameter is 2nm Group 13 nitride semiconductor particle phosphors, and a blue Group 13 phosphor is obtained. The nitride semiconductor particle phosphor is different in that 30 g of trinonylamine is used as the surface modification organic compound. In particular, the obtained Group 13 nitride semiconductor particle phosphor can efficiently absorb light emission at 405 nm with a high external quantum efficiency. In addition, the emission wavelength of the nanocrystal particles is 455nm.
[0109] The X-ray diffraction measurement result is: when the Scherrer formula is used for estimation, the average particle size (diameter) of the nanocrystal particles estimated by the spectral line half-value amplitude is 2nm, the nanocrystal particles show quantum size effect, and the luminous efficiency is improved. In...
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