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Shallow trench isolation process

A process method, shallow trench technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high-density ion filling, the limitation of shallow trench isolation capability, etc., to improve the isolation capability, surface area, etc. The effect of improving internal uniformity and simplifying the process flow

Active Publication Date: 2010-08-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of the prior art, the depth of the shallow trench cannot be too deep, otherwise high-density ions cannot be filled in, so the isolation capability of the shallow trench is also limited to a certain extent

Method used

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Embodiment Construction

[0016] As shown in Figure 1, the embodiment of the present invention includes the following steps:

[0017] First, as shown in FIG. 2 , a first layer of oxide layer pad 30 (Pad Oxide) is grown on a silicon wafer, and then the first layer of oxide layer 30 pad is coated with glue, and the photoresist is photoetched.

[0018] Next, as shown in FIG. 3 , etch to form a shallow trench, peel off the photoresist remaining in the previous step, and then grow a second oxide layer on the inner wall of the shallow trench and the first oxide layer liner 30 Liner 31 (Liner Oxide).

[0019] Again, as shown in FIG. 4 , fill the shallow trench with silicon-based photoresist (Si-based PhotoResist). The silicon-based photoresist is composed of ketone organic solvents, ether organic solvents, alkane organic solvents, anti-reflection absorbing materials, organic acid group resins that can react with standard tetramethylammonium hydroxide developing solutions, and oxygen- and fluorine-containing ...

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Abstract

The invention discloses a process method for isolating a shallow groove. The method comprises the following steps: 1, growing one layer of an oxide layer liner on a silicon chip, gelatinizing the oxide layer liner and carrying out first photoetching; 2, forming the shallow groove through etching, peeling off photoresist and growing one layer of the oxide layer liner in the shallow groove; 3, filling silicon-based photoresist in the shallow groove; 4, etching the silicon-based photoresist; 5, carrying out oxygen plasma treatment; 6, etching the oxide layer liner and cleaning; and 7, growing a layer of the oxide layer liner accurately through an automatic feedback system. The process method adopts the silicon-based photoresist as a filling medium of the shallow groove, greatly improves isolation capacity of the shallow groove, saves a chemical mechanical polishing process of the prior process, simplifies the process flow and improves surface evenness at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a shallow trench isolation process method. Background technique [0002] In the current semiconductor manufacturing process, shallow trench isolation technology is widely used. In shallow trench isolation technology, isolation capability is a very important technical parameter. Among them, the filling of the shallow trench isolation has a great influence on the isolation capability of the shallow trench, and thus has a great influence on the performance of the transistor. [0003] In the existing shallow trench isolation process method, the shallow trench process is the following steps: the first step, growing a layer of oxide layer liner (Pad Oxide) and silicon nitride etch barrier layer; the second step, Photolithography and development; the third step, the etching of the shallow trench; the fourth step, the oxidation of the surface of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L21/31H01L21/312
Inventor 陈福成朱骏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP