Method for loading TiO2 photocatalyst on ferromagnetic metal thin film
A metal thin film, photocatalyst technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc. Recycling, good buoyancy effect
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Embodiment 1
[0010] A kind of TiO 2 The method of loading photocatalyst on ferromagnetic metal thin film is prepared by micro-particle magnetron sputtering coating equipment. The particle size range of 1g is 1-100μm, the average particle size is 80μm, and the material density is about 0.3g / cm 3 The hollow microsphere granular material is used as the substrate, and the hollow microsphere is obtained from the floating beads in the fly ash of the thermal power plant. Before the coating, the surface of the hollow microspheres is pre-purified. The treatment steps are 1) first wash the hollow microspheres with a cleaning solution, stir for 10 minutes and then let stand for 3 minutes, then remove the supernatant, and then use deionized Wash with water for three times; 2) Soak with weak alkaline solution at 50-70°C and fully stir for 15 minutes, then wash with deionized water for three times; 3) Soak with weak acid solution and fully stir for 15 minutes at room temperature, then use Wash three ti...
Embodiment 2
[0014] A method of loading TiO2 photocatalysts on ferromagnetic metal thin films, prepared by microparticle magnetron sputtering coating equipment, the specific steps of coating are the same as in Example 1, but first depositing metal Co on the hollow microspheres, pulse power frequency It is 30KHz, the power is 400W, and other conditions are the same as that of depositing metal Ni in Example 1. The second step of depositing metal Ti is the same as Example 1, only the power supply is a pulse power supply, and the power is 400W. The conditions for the third step of depositing titanium oxide film are: fill the vacuum chamber with argon and oxygen at the same time, adjust the flow ratio of argon and oxygen to 4:1, the working pressure in the vacuum chamber is 1.2Pa, and the pulse power frequency is 30KHz; The radiation power is 600W; the substrate temperature is 150°C; the sputtering time is 600 minutes. Other conditions are with example 1. The sample was detected by SEM, XRD a...
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