Zinc sulphide micron hollow sphere and preparation thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
- Publication Date
- 2009-07-22
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a hollow sphere and a preparation method thereof, in particular to a zinc sulfide micron hollow sphere and a preparation method thereof. Background technique
[0002] Zinc sulfide (ZnS) is a typical direct-bandgap, short-wavelength II-VI semiconductor material. Its band gap is wide, and the excitonic effect is obvious at room temperature. It is more suitable for making optoelectronic devices, such as high-density information reading and writing devices, full-color display devices, photoelectric conversion devices, nonlinear optical devices, underwater communication devices, biological and medical engineering devices. At the same time, ZnS has high infrared transmission performance and excellent optical and thermal properties in the infrared band, and is a good material for aircraft and laser windows. In addition, nano-ZnS has gas-sensing properties, has high sensitivity and selectivity to hydrogen sulfide, and can be used as ...