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Method of manufacturing stibium doped bismuth telluride nano-wire

A bismuth telluride nanometer and antimony doping technology, applied in the material field, can solve the problems of inability to obtain nanometerized materials and high energy consumption, and achieve the effects of simple operation, low energy consumption and mild reaction conditions

Inactive Publication Date: 2009-07-29
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these mechanical methods are energy-intensive and cannot obtain nanomaterials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) Add 28.38g (0.09mol) of bismuth chloride, 2.28g (0.01mol) of antimony chloride and 74.44g (0.2mol) of disodium edetate into 1000ml of water, stir and dissolve to form a transparent complex substance solution;

[0015] (2) 34.44g (0.15mol) orthotelluric acid is dissolved in 1500ml water to form an aqueous solution of orthotelluric acid;

[0016] (3) Pour the above-mentioned complex solution and an aqueous solution of orthotelluric acid into a reactor equipped with a condenser and a magnetic stirrer, add 18.9 g (0.5 mol) of sodium borohydride after mixing, and then reflux at 120° C. for 4 hours;

[0017] (4) After the reaction, the mixed liquid is cooled, the precipitate is separated, washed and dried to obtain antimony-doped bismuth telluride nanowires.

Embodiment 2

[0019] (1) Add 31.2g (0.099mol) of bismuth chloride, 0.23g (0.001mol) of antimony chloride and 37.32g (0.01mol) of disodium edetate into 1000ml of water, stir and dissolve to form a transparent complex substance solution;

[0020] (2) 34.44g (0.15mol) orthotelluric acid is dissolved in 300ml water to form an aqueous solution of orthotelluric acid;

[0021] (3) Pour the above-mentioned complex solution and an aqueous solution of orthotelluric acid into a reactor equipped with a condenser and magnetic stirring, add 3.78g (0.1mol) of sodium borohydride after mixing, and then reflux at 80°C for 6 hours;

[0022] (4) After the reaction, the mixed liquid is cooled, the precipitate is separated, washed and dried to obtain antimony-doped bismuth telluride nanowires.

Embodiment 3

[0024] (1) Add 29.96g (0.095mol) of bismuth chloride, 1.14g (0.005mol) of antimony chloride and 55.98g (0.15mol) of disodium edetate into 3000ml of water, stir and dissolve to form a transparent complex substance solution;

[0025] (2) 34.44g (0.15mol) orthotelluric acid is dissolved in 500ml water to form an aqueous solution of orthotelluric acid;

[0026] (3) Pour the above-mentioned complex solution and an aqueous solution of orthotelluric acid into a reactor equipped with a condenser and magnetic stirring, add 30.26g (0.8mol) of sodium borohydride after mixing, and then reflux at 100°C for 5 hours;

[0027] (4) After the reaction, the mixed liquid is cooled, the precipitate is separated, washed and dried to obtain antimony-doped bismuth telluride nanowires.

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Abstract

The invention relates to a method for preparing a stibium doped bismuth telluride nanowire, which comlprise: firstly adding antimony chloride, bismuth chloride and disodium ethylene diamine tetraacetate into water to form a complex solution; dissolving orthotelluric acid in the water to form an aqueous solution of the orthotelluric acid; mixing the complex solution and the aqueous solution of the orthotelluric acid, and adding overweight reducer into the mixed solution for a reflux reaction at a temperature of between 80 and 120 DEG C for 4 to 6 hours; and after the completion of the reaction, cooling the mixed solution, separating a precipitate, and washing and drying the precipitate to obtain the stibium doped bismuth telluride nanowire. The method has the advantages of mild reaction conditions, simple and convenient operation, and low energy consumption; and the prepared stibium doped bismuth telluride nanowire has good crystallinity.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a preparation method of a nanometer thermoelectric material, in particular to a preparation method of an antimony-doped bismuth telluride nanowire thermoelectric material. Background technique [0002] In the field of thermoelectric energy conversion, it is of great significance to seek high-efficiency thermoelectric materials. The properties of thermoelectric materials are usually characterized by a dimensionless parameter, the thermoelectric figure of merit ZT: ZT=S 2 σT / K (S is the Seebeck coefficient, σ is the electrical conductivity, and K is the thermal conductivity). For thermoelectric materials, the larger the ZT value, the higher the thermoelectric conversion efficiency of the thermoelectric material. Thermoelectric conversion devices constructed of thermoelectric materials have broad application prospects in remote sensing navigation systems, computer CPU cooling, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
Inventor 聂秋林袁求理
Owner HANGZHOU DIANZI UNIV
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