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Polishing composition

A composition and compound technology, applied in polishing compositions containing abrasives, grinding machine tools, grinding devices, etc., to achieve the effects of high flatness and sufficient grinding speed

Inactive Publication Date: 2009-07-29
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case described in this patent document 10, the slurry is essentially for polishing the silicon dioxide film, and there is no example for polishing the metal film. This slurry composition is almost not for polishing the metal film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0188] Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited by these Examples.

Synthetic example

[0189] (Synthesis example: azole group-containing compound)

[0190] Hereinafter, although the synthesis examples of the azole group-containing compound containing 3 or more azole groups are shown, this invention is not limited to these synthesis examples.

[0191]

[0192] In the 500ml flask equipped with thermometer, stirring device, nitrogen inlet tube and reflux condenser, add 30g of n-propanol, under nitrogen atmosphere, while stirring, be warming up to reflux temperature (about 98 ℃). A liquid obtained by dissolving 15.72 g of 1-vinylimidazole, 74.28 g of 1-vinylpyrrolidone, and 0.066 g of 2-mercaptoethanol in 29.93 g of n-propanol (hereinafter referred to as mono-propanol) was added thereto by a quantitative pump. body solution.), and 0.77g dimethyl-2,2'-azobis (2-methylpropionate) dissolved in 215.23g of n-propanol liquid (hereinafter referred to as initiator solution 1 ). Addition time: 4 hours for both solutions. After adding these monomer solutions and ...

Embodiment 1～3、 comparative example 1

[0214] In Examples 1 to 3 and Comparative Example 1, SH-24 manufactured by Speed ​​Farm was used as a grinder, and an 8-inch wafer (200 mm wafer) was evaluated. Polishing was performed at a relative speed of the substrate and the polishing table at 70 m / min, a polishing composition supply rate of 150 ml / min, and a pressure of 15 kPa.

[0215] As a polishing pad, IC1400 (k groove) manufactured by Rodelnita Co., Ltd. was used. The compositions of these Examples 1 to 3 and Comparative Example 1 are shown in Table 1.

[0216] In addition, in Table 1, the addition amount of each composition is shown by mass %. In addition, the additive other than Table 1 is water. Among them, APS means ammonium persulfate, DBS means dodecylbenzenesulfonic acid, and POE means polyoxyethylene 2-level alkyl ether phosphate (addition of secondary alcohol with an average carbon number of 13 and an average of 3 mol of ethylene oxide) (formed by phosphating the obtained alcohol with the raw mater...

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Abstract

Disclosed is a polishing composition which realizes both high planarity and reduction of corrosion in the surface of a wiring metal. Specifically disclosed is a polishing composition containing an oxidizing agent (A), at least one or more acids (B) selected from amino acids, carboxylic acids having 8 or less carbon atoms and inorganic acids, a sulfonic acid (C) having a concentration of not less than 0.01% by mass and an alkyl group having 8 or more carbon atoms, a fatty acid (D) having a concentration of not less than 0.001% by mass and an alkyl group having 8 or more carbon atoms, and at least one or more compounds (E) selected from pyridinecarbonyl compounds, nonionic water-soluble polymers, 2-pyrrolidone, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, gramine, adenine, N,N'-diisopropylethylenediamine, N,N'-bis(2-hydroxyethyl)ethylenediamine, N,N'-dibenzylethylenediamine and N,N'-diphenylethylenediamine.

Description

technical field [0001] The present invention relates to a polishing composition, and more specifically, to a polishing composition suitable for use when polishing a substrate surface, especially when polishing a metal film formed on a substrate, and techniques related to the polishing composition . [0002] This application is based on Japanese Patent Application No. 2006-206800 for which it applied to Japan on July 28, 2006, and uses the content here. Background technique [0003] For integrated circuits (ICs) and large scale integrations (LSIs), in order to increase the operating speed and integration scale, studies have been made on wiring size, wiring resistance, reduction in dielectric constant of interphase insulating films, and the like. Among them, in recent years, copper or copper alloys have been used for wiring due to problems such as wiring delay. [0004] When forming wiring using this copper or copper alloy, a damascene method is used. The damascene method i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/00C09K3/14
CPCC09K3/1463C09G1/02H01L21/3212C23F3/06C23F11/149
Inventor 佐藤孝志高桥浩岛津嘉友伊藤祐司
Owner SHOWA DENKO KK
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