Phosphorus diffusion method for fabricating gallium doped monocrystaline silicon solar cell
A solar cell and phosphorus diffusion technology, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of conversion efficiency, service life and resistance to harsh environments, etc., so as to improve photoelectric conversion efficiency and reduce the surface area. Composite and suitable for large-scale industrial production
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0024] A phosphorus diffusion method for manufacturing a gallium-doped monocrystalline silicon solar cell, comprising the steps of:
[0025] (1) A group of gallium-doped silicon monocrystalline silicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 840°C for 10 minutes; the conductivity type of the gallium-doped monocrystalline silicon wafers was P-type, and the resistivity 0.5 ohm cm, nitrogen flow rate is 20L / min;
[0026] (2) Pass the phosphorus source at 845°C for the first diffusion treatment for 15 minutes; the nitrogen flow rate is 25L / min, the oxygen flow rate is 2L / min, POCl 3 Flow 1L / min;
[0027] (3) Raise the temperature to 860°C, and perform the first drive-in treatment for 12 minutes in a nitrogen and oxygen atmosphere; the nitrogen flow rate is 20L / min, and the oxygen flow rate is 1.5L / min;
[0028] (4) Pass the phosphorus source at 860°C for the second diffusion treatment for 25 minutes; the nitrogen flow rate i...
Embodiment 2
[0046] A phosphorus diffusion method for manufacturing a gallium-doped monocrystalline silicon solar cell, comprising the steps of:
[0047] (1) A group of gallium-doped silicon monocrystalline silicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 815°C for 15 minutes; the conductivity type of the gallium-doped monocrystalline silicon wafers was P-type, and the resistivity 1.5 ohm cm, nitrogen flow rate is 10L / min;
[0048] (2) Pass the phosphorus source at 815°C for the first diffusion treatment for 15 minutes; nitrogen flow rate is 25L / min, oxygen flow rate is 2.5L / min, POCl 3 Flow 1.5L / min;
[0049] (3) Raise the temperature to 900°C, and perform the first drive-in treatment for 10 minutes in a nitrogen and oxygen atmosphere; the nitrogen flow rate is 25L / min, and the oxygen flow rate is 1L / min;
[0050] (4) Pass the phosphorus source at 900°C for the second diffusion treatment for 25 minutes; the nitrogen flow rate is 25L / ...
Embodiment 3
[0067] A phosphorus diffusion method for manufacturing a gallium-doped monocrystalline silicon solar cell, comprising the steps of:
[0068] (1) A group of gallium-doped silicon monocrystalline silicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 825°C for 15 minutes; the conductivity type of the gallium-doped monocrystalline silicon wafers was P-type, and the resistivity 2.8 ohm cm, nitrogen flow rate is 10L / min;
[0069] (2) Pass the phosphorus source at 825°C for the first diffusion treatment for 15 minutes; nitrogen flow rate is 10L / min, oxygen flow rate is 5L / min, POCl 3 Flow 3L / min;
[0070] (3) Raise the temperature to 910°C, and perform the first drive-in treatment in a nitrogen and oxygen atmosphere for 10 minutes; the nitrogen flow rate is 45L / min, and the oxygen flow rate is 1L / min;
[0071] (4) Pass the phosphorus source at 910°C for the second diffusion treatment for 25 minutes; the nitrogen flow rate is 10L / min,...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com