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Phosphorus diffusion method for fabricating gallium doped monocrystaline silicon solar cell

A solar cell and phosphorus diffusion technology, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of conversion efficiency, service life and resistance to harsh environments, etc., so as to improve photoelectric conversion efficiency and reduce the surface area. Composite and suitable for large-scale industrial production

Active Publication Date: 2009-08-05
CSI CELLS CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the rapid development of domestic and foreign economies and increasingly fierce market competition, this kind of solar cell made of boron-doped monocrystalline silicon cannot meet the needs of human beings in terms of conversion efficiency, service life, and resistance to harsh environments. The need for high goals

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A phosphorus diffusion method for manufacturing a gallium-doped monocrystalline silicon solar cell, comprising the steps of:

[0025] (1) A group of gallium-doped silicon monocrystalline silicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 840°C for 10 minutes; the conductivity type of the gallium-doped monocrystalline silicon wafers was P-type, and the resistivity 0.5 ohm cm, nitrogen flow rate is 20L / min;

[0026] (2) Pass the phosphorus source at 845°C for the first diffusion treatment for 15 minutes; the nitrogen flow rate is 25L / min, the oxygen flow rate is 2L / min, POCl 3 Flow 1L / min;

[0027] (3) Raise the temperature to 860°C, and perform the first drive-in treatment for 12 minutes in a nitrogen and oxygen atmosphere; the nitrogen flow rate is 20L / min, and the oxygen flow rate is 1.5L / min;

[0028] (4) Pass the phosphorus source at 860°C for the second diffusion treatment for 25 minutes; the nitrogen flow rate i...

Embodiment 2

[0046] A phosphorus diffusion method for manufacturing a gallium-doped monocrystalline silicon solar cell, comprising the steps of:

[0047] (1) A group of gallium-doped silicon monocrystalline silicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 815°C for 15 minutes; the conductivity type of the gallium-doped monocrystalline silicon wafers was P-type, and the resistivity 1.5 ohm cm, nitrogen flow rate is 10L / min;

[0048] (2) Pass the phosphorus source at 815°C for the first diffusion treatment for 15 minutes; nitrogen flow rate is 25L / min, oxygen flow rate is 2.5L / min, POCl 3 Flow 1.5L / min;

[0049] (3) Raise the temperature to 900°C, and perform the first drive-in treatment for 10 minutes in a nitrogen and oxygen atmosphere; the nitrogen flow rate is 25L / min, and the oxygen flow rate is 1L / min;

[0050] (4) Pass the phosphorus source at 900°C for the second diffusion treatment for 25 minutes; the nitrogen flow rate is 25L / ...

Embodiment 3

[0067] A phosphorus diffusion method for manufacturing a gallium-doped monocrystalline silicon solar cell, comprising the steps of:

[0068] (1) A group of gallium-doped silicon monocrystalline silicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 825°C for 15 minutes; the conductivity type of the gallium-doped monocrystalline silicon wafers was P-type, and the resistivity 2.8 ohm cm, nitrogen flow rate is 10L / min;

[0069] (2) Pass the phosphorus source at 825°C for the first diffusion treatment for 15 minutes; nitrogen flow rate is 10L / min, oxygen flow rate is 5L / min, POCl 3 Flow 3L / min;

[0070] (3) Raise the temperature to 910°C, and perform the first drive-in treatment in a nitrogen and oxygen atmosphere for 10 minutes; the nitrogen flow rate is 45L / min, and the oxygen flow rate is 1L / min;

[0071] (4) Pass the phosphorus source at 910°C for the second diffusion treatment for 25 minutes; the nitrogen flow rate is 10L / min,...

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Abstract

The invention discloses a phosphorus-proliferation method for manufacturing a gallium-doped single crystal silicon solar cell. The method comprises six following steps of thermal treatment, primary phosphorus proliferation, primary drive-in treatment, secondary phosphorus proliferation, secondary drive-in treatment and thermal insulation, thereby realizing the phosphorus-proliferation treatment of a gallium-doped single crystal silicon chip. The phosphorus-proliferation method reduces the surface recombination of the gallium-doped single crystal silicon chip, improves the photoelectric conversion efficiency, and reduces the efficiency attenuation. The practical application proves that compared with the battery chip manufactured in the conventional proliferation method, the photoelectric conversion efficiency of the cell chip manufactured in the phosphorus-proliferation method can be improved by about 0.5 percent, thus having significant positive significance.

Description

technical field [0001] The invention relates to a diffusion junction process for manufacturing solar cells, in particular to a phosphorus diffusion method for manufacturing gallium-doped single crystal silicon solar cells. Background technique [0002] A solar cell is a semiconductor device capable of converting light energy of sunlight into electrical energy. Because it does not need water, oil, gas or fuel, it can generate electricity as long as there is light. It can be called a clean, pollution-free renewable energy source and is favored by people. [0003] Solar cells are mainly made on the basis of semiconductor materials, and their working principle is that photoelectric conversion reactions occur after photoelectric materials absorb light energy to generate current. At present, silicon solar cells are widely used, and most of them are based on monocrystalline silicon doped with boron. However, with the rapid development of domestic and foreign economies and increas...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王立建王栩生章灵军
Owner CSI CELLS CO LTD
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