Resistor converting memory and manufacturing method thereof
A technology of resistance conversion and manufacturing method, which is applied in the field of resistance conversion memory, memory, and the manufacture of the above-mentioned resistance conversion memory, which can solve the problems of high cost and achieve the effect of simple structure
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Embodiment 1
[0072] The invention discloses a resistance switching memory, which includes a substrate, a logic circuit, a word line, a bit line, and an isolation unit. The word line is a semiconductor word line with the first conductivity type. The bit line is located above the word line, and the bit line includes a number of discrete memory cells; through the diffusion effect, some atoms of the storage material in the memory cell are diffused into the semiconductor word line of the first conductivity type, and a pair of memory cells are formed at the contact interface. The combined effect of the semiconductor word line is the doping of the second conductivity type; a number of discrete diodes are formed between the second conductivity type region formed by the atomic diffusion doping of the storage material and the first conductivity type semiconductor word line, and the diodes are used as gates. The cell gates the memory cell above. The isolation unit is used for isolating each word lin...
Embodiment 2
[0079] In this embodiment, the memory unit is an independent part located between the word line and the bit line. please participate Figure 2A-Figure 2D , Figure 2A Shown is a three-dimensional structure diagram of another resistive switching memory. There are p-type silicon word lines 2 on the silicon substrate 1, and GeSbTe lines 6 are covered on the silicon word lines. After diffusion treatment, the GeSbTe lines 6 and silicon The interface of the word line forms a diffusion region 8, the diffusion region is Ge, Sb and Te three kinds of atoms co-doped, the overall doping effect formed is n-type, forming a diode structure with the p-type word line 2; the metal bit line 7 Intersect with the GeSbTe line. Figure 1B shown as Figure 1A Projection plot along the y-axis direction, Figure 1C shown as Figure 1A Projection of one of the structures along the x-axis.
[0080] In another structure, the projection along the x-axis direction is as Figure 2D shown. Figure 2D ...
Embodiment 3
[0084] This embodiment discloses a manufacturing method of a resistance switching memory, first setting a silicon substrate; manufacturing a semiconductor word line of the first conductivity type on the silicon substrate; manufacturing a storage material above the word line of the first conductivity type line; form a region of the second conductivity type near the interface of the word line of the first conductivity type near the interface of the storage material by atom diffusion doping, and form a diode structure with the word line of the second conductivity type; manufacture the bit line , while forming the bit line, remove the storage material covering the part below the bit line and the second-type semiconductor after atomic diffusion of the storage material, etch to the top of the first-type semiconductor layer that has not been diffused, Thereby manufacturing a plurality of discrete diodes above a single word line of the first conductivity type; forming memory cells; fil...
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