Bismuth doped phosphosilicate glass and method of producing the same

Abstract

The invention provides bismuth doped phosphorus silicate zinc acid-based optical glass and a preparation method thereof. The bismuth doped phosphorus silicate zinc acid-based optical glass is characterized in that: the bismuth doped phosphorus silicate zinc acid-based optical glass comprises the following glass substrates in mol percentage: 80 to 65 mol percent of ZnO, 5 to 45 percent of P2O5, 10 to 35 mol percent of SiO2, 0 to 10 mol percent of RO and 0.1 to 5 mol percent of Bi2O3, wherein RO is one of magnesia, calcium oxide, strontia and baryta. Compared with the quartz glass, the glass has an obviously reduced fusion temperature, and has an ultra-broadband optical property covering 1,000 to 1,600 nm communication wavebands. The glass is expected to be applied in the technical fields of ultra-broadband optical amplifiers, high-power lasers, tunable lasers, and the like.

Description

technical field [0001] The invention relates to an optical glass, especially a bismuth-doped phosphosilicate-zinc acid-based optical glass, which can emit fluorescence in the near-infrared communication band, has a long fluorescence lifetime, and a wide gain bandwidth, and is suitable for use as a gain medium in an optical amplifier and / or lasers. Background technique [0002] On March 4, 1998, Yasushi Fujimoto of Mitsubishi Cable Industries Co., Ltd. applied for a patent entitled "Manufacturing Method of Doped Quartz Glass, Optical Fiber and Optical Amplifier" (Patent Publication No. 11-29334). They used bismuth-exchanged zeolite as a dispersion medium, combined the sol-gel method and high-temperature melting method, and prepared bismuth-doped bismuth ions in air. 5+ The corresponding optical fiber was drawn out of quartz glass, and the optical amplification at 1.3 μm under 800nm ​​pumping was realized. The fluorescence peak of this glass is located near 1130nm, the maxim...

AI Technical Summary

Problems solved by technology

In 2001, Fujimoto and Nakatsuka reported in the article Jpn.J.App.Phys., 40, (2001) L279 that the pentavalent bismuth ion Bi was prepared under air at a high temperature of 1760°C 5+ Doped Al 2 o 3 -SiO 2 Glass, the existence of a large number of bubbles reduces its transmittance in the infrared region to ~30%, which largely limits the SiO 2 Practical Applications of Base Glass