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Method for preparing substrate having monocrystalline film

A technology of single crystal thin film and single crystal substrate, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as economic disadvantages, high material costs and process costs, safety and health issues, and achieve low cost , high smoothness, less crystal defects

Active Publication Date: 2009-09-02
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, these improvements require high material and process costs, which are economically unfavorable
There are problems in terms of safety and health, and the reduction of crystal defects is insufficient
Therefore, they cannot be practically applied

Method used

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  • Method for preparing substrate having monocrystalline film
  • Method for preparing substrate having monocrystalline film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] according to figure 1 The steps shown prepare a substrate with a diamond film.

[0061] exist figure 1 In the step (A), silicon single crystal substrates having a diameter of 6 inches (150 mm) and a thickness of 625 μm were provided as the donor substrate 11 and the handle substrate 12 . The surface roughness (Ra) of the prepared processing substrate 12 was 0.3 nm as measured by using an atomic force microscope (AFM).

[0062] exist figure 1 In the step (B), the donor substrate 11 is placed in a 2.45GHz microwave plasma device, and plasma CVD is carried out under the conditions of 30Torr (4,000Pa) and 850° C. hydrogen. As a result, the diamond layer 13 grew to a thickness of 15 μm.

[0063] exist figure 1 In the step (C), the dosage is 5×10 17 / cm 2 Hydrogen ions were implanted into the diamond layer 13 grown on the donor substrate 11, so that an ion-implanted layer 14 was formed at a depth of 500 nm from the surface.

[0064] exist figure 1 In the step (D), t...

Embodiment 2

[0069] exist figure 1In step (A) of , a synthetic quartz substrate having a diameter of 4 inches (100 mm) and a thickness of 400 μm was provided as a donor substrate 11 . An AlN buffer layer with a thickness of 1 μm was stacked by reactive sputtering on a synthetic quartz substrate. A sapphire substrate having a diameter of 4 inches (100 mm) was provided as the handle substrate 12 . The surface roughness (Ra) of the processed substrate 12 was 0.38 nm as measured by using an atomic force microscope (AFM).

[0070] exist figure 1 In step (B) of , by the HVPE (Hydride Vapor Phase Epitaxy) method, using ammonia water and gallium chloride, in the presence of hydrogen gas as a carrier gas, at 1,050°C under atmospheric pressure, on the donor substrate 11 A GaN single crystal layer 13 with a thickness of 8 μm was grown on the surface of the buffer layer.

[0071] exist figure 1 In the step (C), the dosage is 9×10 16 / cm 2 Hydrogen ions were implanted into the GaN single crystal...

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Abstract

Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

Description

technical field [0001] The present invention relates to a method for preparing a substrate of a single crystal thin film having fewer crystal defects. Background technique [0002] Single-crystal thin films and substrates formed of silicon, SiC, GaN, AlN, zinc oxide, diamond, etc., used in semiconductor devices such as power transistors, lasers, LEDs, and high-frequency components are increasing in importance. [0003] Usually, a thin film is grown on a single crystal substrate selected from, for example, silicon, sapphire, SiC, etc. whose lattice constant is close to that of a single crystal thin film by utilizing vapor phase epitaxy, liquid phase epitaxy, sputtering, EB, MBE, PVD (such as sublimation), etc. to prepare single crystal thin films. [0004] On the other hand, the substrates used in these examples are generally prepared by performing bulk crystal growth by the FZ method, CZ method, sublimation method, or the like using seed crystals, followed by slicing, polis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/265H01L21/50H01L21/78
Inventor 久保田芳宏川合信田中好一飞坂优二秋山昌次野岛义弘
Owner SHIN ETSU CHEM IND CO LTD
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