Method for simply and innoxiously preparing single-layer graphene

A single-layer graphene and graphite technology, applied in the field of inorganic material chemistry, can solve problems such as high cost, long preparation time, and complicated process, and achieve the effects of environmental protection, low manufacturing cost, and simple process

Inactive Publication Date: 2009-10-07
SHANGHAI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Both the mechanical stripping method and the heating SiC method require ultra-high temperature conditions, the process is complicated, the preparation time is long, and the cost is high.
As an important preparation method, the chemical dispersion method has become an important point to choose a suitable ring-protographed graphite oxide method. The current reduction methods mainly include reduction of hydrazine hydrate and dimethyl hydrazine, etc., but monohydrazine and dimethyl hydrazine are faced with The huge disadvantage of being highly toxic

Method used

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  • Method for simply and innoxiously preparing single-layer graphene
  • Method for simply and innoxiously preparing single-layer graphene
  • Method for simply and innoxiously preparing single-layer graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0015] The preparation process and steps in this embodiment are as follows:

[0016] 1. Preparation of single-layer graphite oxide sheet solution and graphene oxide solid: use natural graphite powder as raw material, get 3 grams of natural graphite powder with a fineness of 325 meshes, add 12 milliliters of concentrated sulfuric acid, 2.5 grams of potassium persulfate and 2.5 grams of Phosphorus pentoxide, uniformly mixed at 80°C, allowed to react for 4.5 hours; the mixture was cooled to room temperature, diluted with deionized water and allowed to stand overnight, then separated by filtration with a cellulose acetate membrane with 0.2 micron pores, and washed with a large amount of Washed with deionized water, the product was left standing overnight at room temperature; the above product, namely pre-oxidized graphite, was stirred and slowly added to a mixed solution of 120 milliliters of cooled concentrated sulfuric acid at 0°C and 15 grams of potassium permanganate. After st...

Embodiment 2

[0019] The preparation process and steps in this example are exactly the same as those in Example 1 above. The difference is: the heating temperature in the reactor is 150°C, the reaction time is 10 hours, and finally the single-layer graphene is produced.

Embodiment 3

[0021] The preparation process and steps in this example are exactly the same as those in Example 1 above. The difference is: the heating temperature in the reactor is 200°C, the reaction time is 16 hours, and finally a single-layer graphene is produced

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Abstract

The invention relates to a method for simply and innoxiously preparing single-layer graphene, belonging to the chemical field of inorganic field. The technical processes of the invention are as follows: adopting a fixed amount of natural graphite powder; oxidizing the natural graphite powder in a strong oxidizing condition to obtain the graphite oxide; dispersing the obtained graphite oxide in the de-ionized water; then ultrasonically processing for a certain period in an ultrasonic machine to peel the graphite oxide off into single-layer graphite oxide sheet; then dispersing the graphite oxide sheet in the dimethylsulfoxide solution; transferring the mixture solution to a reaction kettle and reacting for 10 to 16 hours in 150 to 200 degrees centigrade; after filtered, obtaining the mass colour product, that is, single-layer grapheme. The invention adopts nontoxic reducing agent, dimethylsulfoxide, so it is good for environment protection. The invention has simple technique, operation convenience, and low manufacturing cost.

Description

technical field [0001] The invention relates to a simple and non-toxic method for preparing single-layer graphene, which belongs to the field of inorganic material chemistry. Background technique [0002] Since its independent existence was discovered in 2004, graphene, as a new allotrope of carbon, has a special honeycomb two-dimensional structure composed of a single layer of carbon atoms. It not only has a good Mechanical properties, but also unique electrical properties. It is a zero-bandgap semiconductor with unique carrier characteristics and excellent electrical quality, and the electrons in it are like infinite Dirac fermions, Brillouin scattering and ultra-high electron mobility in many respects, compared with silicon The electron mobility of the semiconductor is 100 times higher and 20 times higher than gallium arsenide. Given its so many exotic properties, it has attracted much attention recently and is considered to have great application prospects in a wide ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02
Inventor 曹傲能刘振叶张梅吴明红刘元方
Owner SHANGHAI UNIV
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