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Method and device for preparing tin dioxide nano-belt through vapor deposition

A tin dioxide and vapor deposition technology, applied in low-dimensional nanomaterials and nanometer fields, can solve the problems of poor sample crystallinity, complex process conditions, and high operational level requirements, achieving low cost, simple process, and high industrialization value. Effect

Inactive Publication Date: 2009-10-21
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing technologies for preparing one-dimensional nanomaterials, such as metal-organic chemical vapor deposition (MOCVD) have complex process conditions and high operational requirements; the crystallinity of samples prepared by template method (AAO) is not very good. Therefore, to study a process A simple and easy-to-operate method for preparing one-dimensional tin dioxide nanostructures is of great significance

Method used

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  • Method and device for preparing tin dioxide nano-belt through vapor deposition
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  • Method and device for preparing tin dioxide nano-belt through vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 Shown vapor deposition prepares the device of tin dioxide nanobelt, and this device is made up of tubular resistance furnace 1, ceramic boat 5 and silicon sheet 6, is provided with quartz tube 2, heating in conventional prior art in tubular resistance furnace 1 The rod 3 and the thermocouple 4 are special in that a ceramic boat 5 containing samples is placed in the heating zone of the quartz tube 2 in the tubular resistance furnace 1, and a silicon chip 6 facing down is placed on the ceramic boat 5.

[0033] Utilize above-mentioned device, the method step of preparing tin dioxide nanoribbon by gas phase deposition:

[0034] (1) 7.01g SnCl 4 ·5H 2 O (mass purity 99.0%), 25.21g citric acid monohydrate (mass purity 99.5%), and ethylene glycol (volume purity 99.0%) of 13.5ml were mixed and dissolved in 30ml deionized water and stirred to form a solution;

[0035] (2) The 30ml solution of the ingredients in step (1) was heated in a 150ml Erlenmeyer flask ...

Embodiment 2

[0040] The test device is the same as in Example 1.

[0041] Utilize above-mentioned device, the method step of preparing tin dioxide nanoribbon by gas phase deposition:

[0042] (1) 2.28g SnCl 2 2H 2 O (mass purity 99.0%), 12.6g citric acid monohydrate (mass purity 99.5%), and 10.1ml of ethylene glycol (volume purity 99.0%) were mixed and dissolved in 20ml deionized water and stirred to form a solution;

[0043] (2) The 20ml solution of the ingredients in step (1) was heated in a 150ml Erlenmeyer flask at 60°C and stirred (100r / min) for 2 hours to obtain a sol, and then the gel was obtained at a constant temperature of 100°C for 15 hours. The glue was cracked at a constant temperature of 350°C for 5 hours to obtain an amorphous C-Sn-O composite precursor, which was ground into powder with a mortar for later use;

[0044](3) The powder product that step (2) obtains moves in the ceramic boat 5, then moves to the heating zone in the quartz tube 2 of tubular resistance furnace...

Embodiment 3

[0048] The test device is the same as in Example 1.

[0049] Utilize above-mentioned device, the method step of preparing tin dioxide nanoribbon by gas phase deposition:

[0050] (1) 17.71g SnCl 4 ·5H 2 O (mass purity 99.0%), 42.02g citric acid monohydrate (mass purity 99.5%), and 15.2ml of ethylene glycol (volume purity 99.0%) were mixed and dissolved in 50ml deionized water and stirred to form a solution;

[0051] (2) The 50ml solution of the ingredients in step (1) was heated in a 150ml Erlenmeyer flask at 100°C and stirred (rotating at 200r / min) for 0.5h to obtain a sol, and then kept at a constant temperature of 250°C for 6h to obtain a gel. The gel was cracked at a constant temperature of 500°C for 0.5h to obtain an amorphous C-Sn-O composite precursor, which was ground into powder with a mortar for later use;

[0052] (3) The powder product that step (2) obtains moves in the ceramic boat 5, then moves to the heating zone in the quartz tube 2 of tubular resistance fur...

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Abstract

The invention belongs to the field of low-dimensional nanometer materials and nanometer technology, and in particular discloses a method and a device for preparing a tin dioxide nano-belt through vapor deposition. The method comprises the following steps: mixing and dissolving tin salt, citric acid and glycol in water in certain proportion, and stirring the mixture to form a sol; heating the sol to form a gel; cracking the gel to form a compound precursor; grinding the compound precursor into powder and moving the powder into a ceramic boat; heating up the powder in a tube type resistance furnace for reaction; using inert gas as transport gas to cool the powder; and collecting the product by using a silicon slice as a substrate to obtain the tin dioxide nano-belt. Because of few process steps, the method has the advantages of simple process, simple and convenient operation, high controllability, low requirements on experimental facilities, low cost and high industrial value; besides, the tin dioxide nano-belt prepared by the method has a square rutile type structure and good crystallinity.

Description

technical field [0001] The invention belongs to the field of low-dimensional nanomaterials and nanotechnology, in particular to a method and device for preparing tin dioxide nanobelts by vapor deposition. Background technique [0002] The one-dimensional band structure of wide bandgap semiconductors has unique and superior physical properties. This structure is an ideal system for studying the transport process of light, electricity and heat in one-dimensional functional and smart materials. The semiconductor oxide ribbon structure can enable scientists to use an oxide nanoribbon to make nano-sized gas-phase, liquid-phase sensors and sensors or nano-functional and intelligent optoelectronic components, laying a solid foundation for nano-optoelectronics. Tin dioxide with a rutile structure is a wide-bandgap n-type semiconductor material with a room-temperature forbidden band width of 3.6eV (300K). Due to the special physical properties of one-dimensional tin dioxide nanomate...

Claims

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Application Information

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IPC IPC(8): B82B3/00C23C16/40
Inventor 杜祖亮李凤丽王书杰张兴堂
Owner HENAN UNIVERSITY
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