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Method for preparing substrate with gallium-doped zinc oxide texture and substrate prepared by the same

A gallium-doped zinc oxide and substrate technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the adverse effects of photoelectric conversion efficiency of silicon thin film solar cells, and the inability of suede tin oxide film to withstand Affected by continuous bombardment, light-induced attenuation cannot be effectively reduced or suppressed, etc., to achieve the effect of strong resistance to hydrogen plasma bombardment, adjustable light trapping ability, and reduced attenuation

Active Publication Date: 2009-11-04
WUXI SUNTECH POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] First, the textured tin oxide film cannot withstand the continuous bombardment of hydrogen plasma, and high hydrogen dilution is necessary for the subsequent deposition of high-quality p-type layers, so the related process must be changed, that is, on the textured tin oxide film Use a weak hydrogen plasma atmosphere to grow silicon thin films in order to minimize the damage caused by hydrogen plasma. This process change has formed a technical bottleneck in improving the photoelectric conversion efficiency of silicon thin film solar cells;
[0005] Second, the current global supply of textured tin oxide glass is completely monopolized by two Japanese companies, AGC and NSG. The price of textured tin oxide glass per square meter is about 20 US dollars, accounting for about 30% of the total manufacturing cost of silicon thin film solar cells. %, so that the profit margins of silicon thin film solar cell manufacturers are greatly reduced by suppliers of textured tin oxide glass, and are restricted by others
[0006] In addition, boron-doped and aluminum-doped zinc oxide glass with textured surface cannot effectively reduce or suppress light-induced attenuation, which will have an adverse effect on further improving the photoelectric conversion efficiency of silicon thin film solar cells

Method used

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  • Method for preparing substrate with gallium-doped zinc oxide texture and substrate prepared by the same
  • Method for preparing substrate with gallium-doped zinc oxide texture and substrate prepared by the same
  • Method for preparing substrate with gallium-doped zinc oxide texture and substrate prepared by the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Adopt the method provided by the present invention to prepare the glass substrate with the gallium-doped zinc oxide textured surface, the specific operation steps are as follows:

[0036] 1) Clean the ordinary float glass substrate (purchased from Changshu Yaopi Special Glass Co., Ltd.) by high-pressure spray cleaning agent;

[0037] 2) The cleaned glass is placed in a radio frequency (13.56MHz) magnetron sputtering coating machine (purchased from Applied Materials Co., Ltd.), and the sputtering target used is a doped gallium oxide with a concentration of 2.5wt%. Gallium zinc oxide, the argon pressure is 4mtorr, the sputtering power is 250W, and the substrate temperature is 100°C, so as to prepare a gallium-doped zinc oxide film with an initial thickness of 900nm;

[0038]3) Soak the gallium-doped zinc oxide film prepared above in an acidic etching solution for 40s, the concentration of hydrochloric acid in the etching solution is 0.4wt%, the concentration of oxalic aci...

Embodiment 2~4

[0042] Except for the conditions in Table 1 below, other conditions were the same as in Example 1 to prepare a glass substrate with gallium-doped zinc oxide texture.

[0043] Table 1

[0044]

serial number

Substrate

Sputtering target

Medium trioxide

digallium concentration

(wt%)

Argon

pressure

(mtorr)

sputtering

the power

(W)

Substrate

temperature

(℃)

film

initial

thickness

(nm)

Etchant

composition

(wt%)

etching

liquid temperature

degree(℃)

to soak

time

(s)

Thin suede

Film thickness

(nm)

implement

example 1

float

Glass

2.5

4

250

100

900

Hydrochloric acid 0...

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PUM

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Abstract

The invention relates to the photovoltaic cell manufacturing field, and more specifically relates to a method for preparing a substrate with gallium-doped zinc oxide texture, a substrate prepared by the same and a silicon thin-film solar cell comprising the substrate. The method for preparing a substrate can help obtain the substrate with gallium-doped zinc oxide texture and relieve silicon thin-film solar cell manufacturers from restrictions from textured tin oxide glass suppliers, thus further reducing production and manufacturing cost. The method can be directly applied to production and manufacture of the silicon thin-film solar cell, and the substrate prepared by the method can replace the existing expensive textured tin oxide glass substrate, and shows better properties.

Description

technical field [0001] The invention relates to the field of photovoltaic cell manufacturing, in particular to a method for preparing a substrate with a gallium-doped zinc oxide textured surface, a substrate prepared by the method, and a silicon thin film solar cell comprising the substrate. Background technique [0002] In recent years, with the increasingly serious energy and environmental problems, the global photovoltaic industry has developed rapidly. As a kind of photovoltaic cell technology, silicon thin film solar cell technology is becoming more and more mature, and its photoelectric conversion efficiency and stability are also continuously improved. Compared with crystalline silicon solar cells, silicon thin film solar cells have better photovoltaic output characteristics at high temperature and have less energy repayment time. In addition, silicon thin film solar cells are particularly suitable for photovoltaic power generation modules (BIPV) combined with buildi...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236H01L31/042H01L31/0445
CPCY02E10/52Y02E10/50Y02P70/50
Inventor 乔琦马康王永谦张光春施正荣
Owner WUXI SUNTECH POWER CO LTD
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