Method for preparing substrate with gallium-doped zinc oxide texture and substrate prepared by the same
A gallium-doped zinc oxide and substrate technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the adverse effects of photoelectric conversion efficiency of silicon thin film solar cells, and the inability of suede tin oxide film to withstand Affected by continuous bombardment, light-induced attenuation cannot be effectively reduced or suppressed, etc., to achieve the effect of strong resistance to hydrogen plasma bombardment, adjustable light trapping ability, and reduced attenuation
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Embodiment 1
[0035] Adopt the method provided by the present invention to prepare the glass substrate with the gallium-doped zinc oxide textured surface, the specific operation steps are as follows:
[0036] 1) Clean the ordinary float glass substrate (purchased from Changshu Yaopi Special Glass Co., Ltd.) by high-pressure spray cleaning agent;
[0037] 2) The cleaned glass is placed in a radio frequency (13.56MHz) magnetron sputtering coating machine (purchased from Applied Materials Co., Ltd.), and the sputtering target used is a doped gallium oxide with a concentration of 2.5wt%. Gallium zinc oxide, the argon pressure is 4mtorr, the sputtering power is 250W, and the substrate temperature is 100°C, so as to prepare a gallium-doped zinc oxide film with an initial thickness of 900nm;
[0038]3) Soak the gallium-doped zinc oxide film prepared above in an acidic etching solution for 40s, the concentration of hydrochloric acid in the etching solution is 0.4wt%, the concentration of oxalic aci...
Embodiment 2~4
[0042] Except for the conditions in Table 1 below, other conditions were the same as in Example 1 to prepare a glass substrate with gallium-doped zinc oxide texture.
[0043] Table 1
[0044]
serial number
Substrate
Sputtering target
Medium trioxide
digallium concentration
(wt%)
pressure
(mtorr)
sputtering
the power
(W)
Substrate
temperature
(℃)
film
initial
thickness
(nm)
Etchant
composition
(wt%)
degree(℃)
to soak
time
(s)
Thin suede
Film thickness
(nm)
implement
example 1
float
Glass
2.5
4
250
100
900
Hydrochloric acid 0...
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