Quantum dot luminescence transparent casting glue composite material

A technology of quantum dot light-emitting and composite materials, applied in the field of quantum dot light-emitting transparent potting compound materials, can solve the problems of low energy conversion efficiency, less red components, and low color rendering index of LED white light, so as to improve the luminous efficiency and Color rendering, simple preparation method, and the effect of optimizing the packaging structure

Inactive Publication Date: 2009-11-18
EAST CHINA NORMAL UNIVERSITY +1
View PDF1 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are some problems in using these methods: firstly, the luminous efficiency of the phosphor is low, which is mainly due to the low energy conversion efficiency of the phosphor itself under the excitation of ultraviolet, violet or blue light; secondly, the white light produced by the mixture of yellow light and blue light There is an imbalance in color, the red component is relatively small, and the color rendering index of LED white light is low, etc.
[0009] In the above disclosed technologies, there is no application of quantum dot materials to modify epoxy resin and silica gel and use them for white LED potting glue

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot luminescence transparent casting glue composite material
  • Quantum dot luminescence transparent casting glue composite material
  • Quantum dot luminescence transparent casting glue composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] a. Preparation of quantum dot luminescent materials

[0024] Preparation of ZnO by Sol-Gel Method 2 Quantum dot nanomaterials, 0.75g of zinc nitrate hexahydrate, 2.5mL of analytically pure ethyl orthosilicate, and 0.15g of urea were sequentially added to 50mL of absolute ethanol solution and stirred evenly, and then the pH was adjusted with nitric acid with a concentration of 1M, so that The pH value of the above mixed solution is 3, and a transparent solution is formed after 10 hours of stirring reaction, and after the absolute ethanol in the solution is completely volatilized at room temperature, the formed white substance is dried at 100°C for 2 hours, and finally The prepared material is annealed at a certain temperature between 300 DEG C and 700 DEG C for 3 hours to obtain the ZnO quantum dot nano material.

[0025] b. Surface modification of quantum dot luminescent materials

[0026] Take 5 mg of sodium lauryl sulfate with a purity greater than 95% and dissolve ...

Embodiment 2

[0030] a. Preparation of quantum dot luminescent materials

[0031] CdSe-Cu quantum dot nanomaterials were prepared by sol-gel method, and 0.17gCuCl 2 2H 2 O with 0.29gCd(CH 3 COO) 2 2H 2 O was mixed and dissolved into 150 mL of analytically pure N,N-dimethylformamide, and 1.5 mL of analytically pure mercaptoethanol was added, then 1 mL of 20% sodium selenite solution was added dropwise within 5 minutes Slowly add to the above mixed solution, reflux the final solution for 3 hours, dissolve it in absolute ethanol three times, centrifuge, and dry it in a vacuum oven at 80°C for 2 hours to prepare the CdSe-Cu quantum dot luminescent material , the size of its quantum dots is below 10nm, and it can emit white light with a peak value of about 550nm under the excitation of 460nm blue light, and the pressure of the vacuum drying oven is controlled below 200Pa.

[0032] b. Surface modification of quantum dot luminescent materials

[0033] Get CdSe-Cu quantum dot nano material 30...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a quantum dot luminescence transparent casting glue composite material. The material is characterized in that 0.1-5wt% of a quantum dot nano material is doped into transparent high molecular casting glue for preparation to obtain the quantum dot luminescence transparent casting glue composite material. The preparation includes preparation of quantum dot luminescence material, surface modification of quantum dot luminescence material and synthesis of casting glue composite material. Compared with the prior art, the invention has the advantages of simple preparation method, convenient operation and low cost, is applicable to industrialized production of a light emitting diode, optimizes encapsulation structure and well improves luminous efficiency and color rendering of the LED, thus filling the gap of semiconductor lighting technology.

Description

technical field [0001] The invention relates to a photoelectric composite material, in particular to a quantum dot luminescent transparent potting glue composite material. Background technique [0002] In order to cope with the increasing global energy crisis and environmental pollution, "energy saving" and "green" have become one of the main research goals in the field of materials science. White LED lighting technology is known as a new generation of green and environmentally friendly lighting sources after incandescent lamps and fluorescent lamps because of its characteristics of "energy saving", "environmental protection", "high efficiency" and "long life". [0003] At present, the realization of white light LED mainly uses the LED chip to emit light to excite other fluorescent light-emitting materials to mix to form white light. Cooperate with two phosphors that emit green light and red light, or use purple or ultraviolet LEDs to excite red, green, and blue phosphors. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C08L63/00C08K9/04C09K11/54C09K11/88C09K3/10H01L33/00
Inventor 孙卓潘丽坤张明昌曹美玲张哲娟林丽锋
Owner EAST CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products