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Light emitting diode chip structure and manufacturing method thereof

A light-emitting diode and chip structure technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increased controllability, limited brightness improvement, long corrosion time, etc., to improve quality and luminous efficiency, reduce interface Reflection, reduce the effect of internal absorption

Active Publication Date: 2009-11-18
EPILIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to improve the luminous efficiency of light-emitting diodes, a method of making graphic substrates by wet etching sapphire substrates has been proposed. The manufacturing method is: SiO 2 Make a certain pattern, then use it as a mask, and then etch a certain microstructure on the sapphire substrate by wet etching to improve the luminous efficiency, but this method has many defects, the main defects are: 1 , It is impossible to produce a triangular pyramid-shaped microstructure, and the brightness improvement is limited; 2. Using SiO 2 When making a mask, the mask material will also be corroded during corrosion, which will increase the difficulty of pattern formation; 2. The corrosion time is too long, it takes 1-10 hours, and the production efficiency is low; 3. With the corrosion time Elongated, the corrosion solution is constantly changing, and the controllability becomes more difficult

Method used

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  • Light emitting diode chip structure and manufacturing method thereof
  • Light emitting diode chip structure and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0040] Step 1: Make a metal layer on the sapphire by using an electron beam evaporation machine or sputtering, and the metal material is one of titanium and nickel;

[0041] Step 2: Use photoresist to form a layer of photoresist film on the sapphire substrate, the thickness of the film layer is 0.1-2um, use photolithography technology to pattern the photoresist on the substrate to form the desired pattern ; Such as cylinder, round platform, etc.

[0042] Step 3: Reflow the photoresist at low temperature with a rubber baking table, reflow the previous photoresist pattern into a convex hull or truncated cone structure, and reflow the incomplete peripheral graphics caused by the mask operation into a convex hull or truncated cone shape , to make up for the lack of consistency between the peripheral graphics and the central graphics after the mask, so that the graphics consistency on the entire substrate is greatly improved. Reflow conditions: the baking temperature is 100 ° C, an...

Embodiment 2

[0052] Step 1: Make a metal layer on the sapphire by using an electron beam evaporation machine or sputtering, and the metal material is one of aluminum and chromium;

[0053] Step 2: Use photoresist to form a layer of photoresist film on the sapphire substrate, the thickness of the film layer is 5um, and use photolithography technology to pattern the photoresist on the substrate to form the desired pattern;

[0054] Step 3: Reflow the photoresist at low temperature with a rubber baking table, reflow the previous photoresist pattern into a convex hull or truncated cone structure, and reflow the incomplete peripheral graphics caused by the mask operation into a convex hull or truncated cone shape , to make up for the lack of consistency between the peripheral graphics and the central graphics after the mask, so that the graphics consistency on the entire film is greatly improved. Reflow conditions: baking temperature is 50 ° C ~ 250 ° C, time is 10 ~ 60 minutes;

[0055] Step 4...

Embodiment 3

[0064] Step 1: Use photoresist to form a layer of photoresist film on the sapphire substrate, the thickness of the film layer is 0.1um~5um, use photolithography technology to pattern the photoresist on the substrate to form a periodic arrangement the pit;

[0065] Step 2: Evaporate a metal layer on the surface of the previous substrate by electron beam evaporation or sputtering, the metal is nickel or other metals, and the thickness is 0.1-0.5um;

[0066] Step 3: Clean the photoresist by wet cleaning or stripping;

[0067] Step 4: By using metal as a mask, the metal pattern is transferred to the substrate by dry etching.

[0068] Step 5: Clean the metal with wet cleaning, and the corrosion solution is sulfuric acid and nitric acid solution;

[0069] Step 6: Etching the substrate by a wet method, corroding the pattern after step 1) into a triangular pyramid shape, and the etching solution is a mixed solution of sulfuric acid, phosphoric acid, sulfuric acid and phosphoric acid...

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Abstract

The invention relates to a light emitting diode chip structure, comprising a sapphire substrate layer; wherein, the sapphire substrate layer is provided with triangular pyramid microstructures arranged periodically. The invention also relates to a manufacturing method of the light emitting diode chip structure, including the following steps: 1) a graph is transferred onto the sapphire substrate by applying dry etching technology; 2) the graph on the sapphire substrate is formed in periodically arranged triangular pyramid by applying wet etching. The invention can greatly reduce boundary reflection and internal absorption as periodically arranged high quality triangular pyramid microstructures are formed on the sapphire substrate; and crystal defect of the sapphire is greatly reduced after wet etching, thus high crystal quality epitaxial layer can be grown on the surface and the quality and luminous efficiency of the light emitting diode are greatly improved.

Description

technical field [0001] The invention relates to a light-emitting diode chip manufacturing process, in particular to a structure and a manufacturing method for improving chip light extraction efficiency by changing the substrate structure. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, causing a revolution in the history of human lighting, thus It has gradually become a research hotspot in the field of electronics. In order to obtain high-brightness LEDs, the key is to improve the internal quantum efficiency and external quantum efficiency of the device. At present, the light extraction efficiency of the chip is the main factor limiting the external quantum efficiency of the device. The main reason is The refractiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 袁根如郝茂盛
Owner EPILIGHT TECH
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