Method for processing amorphous silicon oxide nano wire through electronic beam focusing radiation

Abstract

The invention discloses a method for processing an amorphous silicon oxide nano wire through electronic beam focusing radiation, relates to a method for processing a nano wire through electronic beam focusing radiation, and provides a method for processing an amorphous silicon oxide nano wire through electronic beam focusing radiation. The method comprises the following steps: scraping silicon oxide nano wire powder from a substrate, dispersing the powder to a suspension with uniform color by using an organic solvent, adding the mixture on a copper wire mesh attached with a micro-grid carbon film, standing the mixture to obtain a TEM sample, placing and fixing the TEM sample in a sample seat, pushing a sample rod into a sample chamber, vacuumizing a transmission electron microscope, and observing and analyzing the silicon oxide nano wire in the sample; roughly selecting the silicon oxide nano wire in a TEM low-power observation mode first, and then further screening the roughly-selected nano wire in a higher-power observation mode; and shooting the shape of the selected nano wire before processing by using a CCD attached to the electron microscope, then performing focusing radiation on the nano wire, shooting in real time to record the shape changing process of the nano wire, and repeating the processes of 'radiating-shooting' until the processing of the nano wire is achieved.

Description

technical field [0001] The invention relates to a nanowire electron beam focused irradiation processing method, in particular to an amorphous silicon oxide (SiO x ) Nanowire focused electron beam irradiation processing method. Background technique [0002] Silicon oxide nanowires are quasi-one-dimensional amorphous semiconducting nanomaterials with silicon-bridged oxygen bonds, which have unique blue light properties and thus have potential applications in scanning near-field optical microscopy (SNOM) probes, waveguides, and nano-optical devices. Application prospects (see literature: 1.Yu D P, Hang Q L, Ding Y et al, Appl.Phys.Lett., 1998, 73 (21): 3076; 2.Liu Z Q et al, J.Mater.Res., 2001 , 16(3): 683; 3. Peng X S, Wang X F, Zhang J et al, Appl. Phys. A, 2002, 74: 831). At present, the processing of nanowires under the focused irradiation of high-energy electron beams by transmission electron microscopy (TEM) mainly focuses on crystalline metal nanowires and crystalline ...

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Problems solved by technology

At present, the processing of nanowires under the focused irradiation of high-energy electron beams by transmission electron microscopy (TEM) mainly focuses on crystalline metal nanowires and crystalline semiconductor nanowires (see literature: 4. Kondo Y and Takayanagi K, Phys. Rev. Lett. , 1997, 79(18): 3455; 5. Remeika M and Bezryadin A, Nanotechnology, 2005, 16: 1172; 6. Xu S Y, Tian M L, Wang J G et al, Small, 2005, 1(12): 1221; 7 . Xu Shengyong, Journal of Electron Microscopy, 2007, 26(6): 563), there is no relevant report on the electron beam focused irradiation processing of amorphous nanowires, especially amorphous silicon oxide nanowires

In addition, more importantly, the above-mentioned only nanowire processing research has not yet revealed the surface nano-curvature effect or "nano-size" effect (see literature: 8. Zhu X F, J. Phys: Condens. Matter, 2003, 15: L253; 9.Zhu X F and Wang Z G, Int.J.Nanotechnology, 2006, 3:491) and ultrafast process effects or "nanotime" effects (see literature: 10.Zhu X F and Wang Z G, Chin.Phys.Lett., 2005, 22(3): 737; 11. Zhu X F and Wang Z G, Int.J.Nanotechnology, 2006, 3: 491) have a key influence on the nanowire processing process, and more and more experimental phenomena have confirmed these two The latter has strong universality and can be used to predict and explain the instability of various low-dimensional nanostructures and their nanofabrication under ultrafast irradiation of energy beams (see literature: 12.Zhu X F and Wang Z G, Int .J.Nanotechnology, 2006, 3: 491; 13. Su Jiangbin, Meng Tao, Li Lunxiong, Wang Zhanguo, Zhu Xianfang, Journal of Functional Materials and Devices, 2008, 14(1): 268)

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