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Method for fast preparing n type Bi2(SexTe(1-x))3 thermoelectric material

A thermoelectric material and n-type technology, which is applied in the field of rapid preparation of n-type Bi23 thermoelectric materials, can solve the problems of long preparation time and large energy consumption, and achieve the effects of simple preparation process, low temperature and short time.

Inactive Publication Date: 2009-12-30
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The n-type bismuth telluride compound prepared by the traditional process (zone melting method) has a maximum thermoelectric performance figure of merit ZT of 0.7-0.9, and requires a long preparation time of 3-5 days, and consumes a lot of energy

Method used

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  • Method for fast preparing n type Bi2(SexTe(1-x))3 thermoelectric material

Examples

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Effect test

Embodiment 1

[0029] A rapid preparation of Bi 2 (Se 0.08 Te 0.92 ) 3 The method for thermoelectric material, it comprises the steps:

[0030] 1). According to the molar ratio of Bi powder, Te powder and Se powder is 2:0.24:2.76, weigh Bi powder, Te powder and Se powder {that is, use Bi powder, Te powder and Se powder as raw materials, according to Bi powder 2 (Se 0.08 Te 0.92 ) 3 Stoichiometric proportioning}; the total amount of Bi powder, Te powder and Se powder is weighed 5g; Bi powder, Te powder and Se powder are mixed and put into a 10mm steel mold and pressed into a block material on a tablet machine; the Bi powder , Te powder, Se powder purity ≥ 99.99% (mass);

[0031] 2). Put the pressed block material into the quartz tube of the single-roll quenching equipment, and under the protection of argon atmosphere, use high-frequency induction heating method to heat for 15 minutes at a current of 2-11A and a voltage of 100-500V. ~ 30 seconds, heat and melt the bulk material to obta...

Embodiment 2

[0036] A rapid preparation of Bi 2 (Se 0.1 Te 0.9 ) 3 The method for thermoelectric material, it comprises the steps:

[0037] 1). According to the molar ratio of Bi powder, Te powder and Se powder is 2:0.3:2.70, weigh Bi powder, Te powder and Se powder {that is, use Bi powder, Te powder and Se powder as raw materials, according to Bi powder 2 (Se 0.1 Te 0.9 ) 3 Stoichiometric proportioning}; the total amount of Bi powder, Te powder and Se powder is weighed 5g; Bi powder, Te powder and Se powder are mixed and put into a 10mm steel mold and pressed into a block material on a tablet machine; the Bi powder , Te powder, Se powder purity ≥ 99.99% (mass);

[0038] 2). Put the pressed block material into the quartz tube of the single-roll quenching equipment, and under the protection of argon atmosphere, use high-frequency induction heating method to heat for 15 minutes at a current of 2-11A and a voltage of 100-500V. ~ 30 seconds, heat and melt the bulk material to obtain a ...

Embodiment 3

[0043] A rapid preparation of Bi 2 (Se 0.12 Te 0.88 ) 3 The method for thermoelectric material, it comprises the steps:

[0044] 1). According to the molar ratio of Bi powder, Te powder and Se powder is 2:0.36:2.64, weigh Bi powder, Te powder and Se powder {i.e. take Bi powder, Te powder and Se powder as raw materials, according to Bi 2 (Se 0.12 Te 0.88 ) 3 Stoichiometric proportioning}; the total amount of Bi powder, Te powder and Se powder is weighed 5g; Bi powder, Te powder and Se powder are mixed and put into a 10mm steel mold and pressed into a block material on a tablet machine; the Bi powder , Te powder, Se powder purity ≥ 99.99% (mass);

[0045] 2). Put the pressed block material into the quartz tube of the single-roll quenching equipment, and under the protection of argon atmosphere, use high-frequency induction heating method to heat for 15 minutes at a current of 2-11A and a voltage of 100-500V. ~ 30 seconds, heat and melt the bulk material to obtain a unifo...

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Abstract

The invention relates to a method for fast preparing n type Bi2(SexTe(1-x))3 thermoelectric material, which is characterized by comprising the following steps: 1) weighing Bi powder, Te powder and Se powder according to the mol ratio of 2:3x:3-3x), wherein x is 0.08-0.12; and mixing the Bi powder, Te powder and Se powder followed by being laminated into bulk material on a laminating machine; 2) heating and melting the laminated bulk material through high frequency induction to obtain uniform bismuth telluride fusant, then controlling the air blast pressure and rotation speed of a copper roller by single roller quenching method to obtain a ligature material; and 3) pulverizing the ligature material, loading by adopting discharging plasma sintering technology, and obtaining n type Bi2(SexTe(1-x))3 thermoelectric material by controlling sinter temperature, time and pressure. The invention has the characteristics of simple technique and short preparation time.

Description

technical field [0001] The invention belongs to the field of new energy materials, in particular to a method for rapidly preparing n-type Bi 2 (Se x Te 1-x ) 3 methods for thermoelectric materials. Background technique [0002] Thermoelectric conversion technology is a technology that uses the Seebeck effect and Peltier effect of semiconductor materials to directly convert energy. The conversion efficiency mainly depends on the dimensionless performance index ZT value of the material (ZT=α 2 σT / κ, where α is the Seebeck coefficient; σ is the electrical conductivity; T is the absolute temperature; κ is the thermal conductivity). Because it does not contain the huge transmission mechanism required by traditional energy conversion technology, it has the characteristics of small size, high reliability, low manufacturing and operating costs, long life, simple manufacturing process, and wide application. A new type of environment-coordinated clean energy conversion technology...

Claims

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Application Information

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IPC IPC(8): C22C1/10C22C1/05C22C12/00
Inventor 唐新峰王善禹谢文杰鄢永高张清杰
Owner WUHAN UNIV OF TECH
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