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Nanometer composite phase-change material, preparation and application thereof

A phase change material and nanocomposite technology, applied in the field of nanocomposite phase change film and its preparation and application, can solve problems such as the influence of C-RAM device reliability, and achieve the improvement of data retention ability and radiation resistance ability, strong heat Stability, the effect of improving data retention ability

Active Publication Date: 2010-03-03
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, larger grains are contradictory to the current trend of shrinking size in the research and development of phase change memory, and the emergence of large grains has a negative impact on the reliability of C-RAM devices

Method used

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  • Nanometer composite phase-change material, preparation and application thereof
  • Nanometer composite phase-change material, preparation and application thereof
  • Nanometer composite phase-change material, preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Example 1 Preparation of nanocomposite phase change film-Ge by magnetron sputtering 2 Sb 2 Te 5 with HfO 2 complex

[0042] 1) Cleaning the (100) oriented silicon substrate.

[0043] 2) Prepare a nanocomposite phase change film 4 on a silicon substrate. Using Ge 2 Sb 2 Te 5 Alloy target and HfO 2 Thin films were prepared by two-target co-sputtering method. Ge 2 Sb 2 Te 5 and HfO 2 Refer to Table 1 for the weight ratio. During the preparation process, the background vacuum is 10-5Pa, the argon gas pressure during sputtering is 0.2Pa, and the sputtering power: add to Ge 2 Sb 2 Te 5 The one on the alloy target is DC 50 watts, added to HfO 2 The radio frequency on the target is 45 watts, the sputtering time is 14 minutes, and the deposition thickness is approximately 180 nm.

[0044] Table 1

[0045] formula

1

2

4

comparative example

Ge 2 Sb 2 Te 5 Alloy (wt%)

64

76

88

100

[0046...

Embodiment 2

[0049] Embodiment 2 Preparation of phase change memory.

[0050] 1) Clean two (100) oriented silicon substrates, prepare a 100nm thick tungsten electrode 2 by CVD on one of the silicon substrates 1, as figure 1 shown.

[0051] 2) Deposit a silicon oxide layer 3 by sputtering on the substrate deposited with tungsten electrodes, with a thickness of 100nm, such as figure 2 shown.

[0052] 3) A small hole with a diameter of 260nm is carved on the silicon oxide by using the exposure-etching process. The exposure method used is electron beam exposure, and the etching method is reactive ion etching. The structure is as follows: image 3 shown.

[0053] 4) Prepare a nanocomposite phase-change thin film 4 on a silicon substrate and a silicon substrate with a tungsten electrode. Using Ge 2 Sb 2 Te 5 Alloy target and HfO 2 Thin films were prepared by two-target co-sputtering method. The preparation process is the same as in Example 1, and the formulations of the nanocomposite ...

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Abstract

The invention belongs to the microelectronics technical field, particularly relates to a nanometer composite phase-change thin film and preparation and an application thereof. In the invention, the nanometer composite phase-change material is formed by compounding 12-36% of HfO2 with 64-88% of the phase-change material according to the weight percent. The nanometer composite phase-change thin filmcan be applied to a memory, thus being beneficial to realizing high-density storage, improving heating efficiency of a phase-change memory during a programming process, reducing power consumption, and enhancing data retention capability, fatigue property and irradiation resistance capability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a nanocomposite phase-change film and its preparation and application. Background technique [0002] Phase change memory (C-RAM) is an emerging semiconductor memory, compared with the existing semiconductor storage technologies, including conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM) ), etc., and non-volatile technologies, such as ferroelectric random access memory (FeRAM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH), etc., have non-volatile, long cycle life ( >10 13 time), small component size, low power consumption, multi-level storage, high-speed reading, anti-radiation, high and low temperature resistance (-55-125 ° C), anti-vibration, anti-electronic interference and simple manufacturing process (can be compared with existing The integrated c...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/38H01L45/00
Inventor 宋三年宋志棠封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI