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Compound phase-change material target and preparation method thereof

A composite phase change material and a technology of phase change materials, which are applied to the target of composite phase change materials and their preparation, and the field of composite phase change materials, can solve problems such as uneven distribution, and achieve the effect of solving uneven distribution.

Active Publication Date: 2010-03-03
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For composite phase change materials, the biggest problem currently facing is that the components of the composite material are unevenly distributed in the target material, which is unacceptable for industrial production. Therefore, it is necessary to find a composite material target that can Method for uniform distribution of ingredients

Method used

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  • Compound phase-change material target and preparation method thereof
  • Compound phase-change material target and preparation method thereof

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preparation example Construction

[0035] In addition, this embodiment also discloses a method for preparing the above composite phase change material target, including the following steps:

[0036] 1) Prepare the material with a higher melting point into a cylindrical shape as a matrix, such as figure 1 shown;

[0037] 2) Using an etching process to prepare cylindrical holes with the same size and shape and uniform distribution on the substrate, such as figure 2 As shown, the diameter of the small hole is 0.5-50 μm, and the depth is 0.5-50 μm;

[0038] 3) The material with a lower melting point is filled in the cylindrical small hole, and the two materials are combined through a hot-press sintering process. What is used here is a vacuum hot-press sintering method, such as image 3 shown;

[0039] 4) The surface is treated by mechanical polishing to obtain a smooth, uniform and dense composite phase change material target, such as Figure 4 shown.

Embodiment 1

[0041] Using the phase change material antimony tellurium alloy (Sb-Te) and the non-phase change material Si, the composite phase change material target material-Si of the structure described in the present invention is prepared 2 Sb 2 Te 3 , whose steps are:

[0042] 1) Compared with antimony-tellurium alloy (Sb-Te), the non-phase change material Si has a higher melting point, so Si is prepared into a cylindrical shape as a matrix, such as figure 1 shown;

[0043] 2) Using an etching process to prepare cylindrical holes with the same size and shape and uniform distribution on the Si substrate, such as figure 2 As shown, the diameter of the small hole is 0.5 μm, and the depth is 0.5 μm;

[0044] 3) Sb 2 Te 3 The material is filled in the small holes, and the two materials are combined through the hot pressing sintering process, such as image 3 shown;

[0045] 4) The surface is treated by chemical mechanical polishing to obtain a smooth, uniform and dense composite p...

Embodiment 2

[0047]Using phase change material germanium antimony tellurium alloy (Ge-Sb-Te) and non-phase change material SiO 2 , prepare the composite phase change material target material-(Ge 2 Sb 2 Te 5 ) 0.9 -(SiO 2 ) 0.1 , the steps are:

[0048] 1) Non-phase change material SiO 2 Compared with germanium antimony tellurium alloy (Ge-Sb-Te), SiO 2 The melting point of SiO is higher, so SiO 2 Prepared into a cylindrical shape as a substrate, such as figure 1 shown;

[0049] 2) Etching process is used in this SiO 2 Cylindrical holes with the same size and shape and uniform distribution are prepared on the substrate, such as figure 2 As shown, the diameter of the small hole is 5 μm, and the depth is 5 μm;

[0050] 3) The Ge-Sb-Te material is filled in the small holes, and the two materials are combined through a hot-pressing sintering process, such as image 3 shown;

[0051] 4) The surface is treated by chemical mechanical polishing to obtain a smooth, uniform and dense ...

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Abstract

The invention discloses a compound phase-change material target and a preparation method thereof. The compound phase-change material target is prepared by compounding a phase-change material and another material. While in preparation, firstly, the material with higher melting point is prepared into cylindrical shape and then is taken as a matrix; an etching process is utilized to prepare cylindrical pores with the same size and shape and even distribution on the matrix; then the material with lower melting point is filled into the pores; the two materials are combined together through a vacuumhot press sintering process, and finally, a mode of mechanical polishing is utilized to treat the surface, and therefore, a smooth, even and compact compound phase-change material target is obtained.Each component in the compound phase-change material target prepared by the method has even distribution, and the constituent can be modulated according to the size and the density of the pore, thereby solving the problem that each component of the compound material target is not evenly distributed; and the target adopted to prepare a film material is beneficial to evenly compounding two different materials, and therefore, the complexity and the instability of a multi-target cosputtering process are avoided.

Description

technical field [0001] The invention relates to a composite phase change material, in particular to a target material of the composite phase change material and a preparation method thereof. The invention belongs to the technical field of micro-nano electronics. Background technique [0002] Phase change memory (C-RAM) is an emerging semiconductor memory, compared with the existing semiconductor storage technologies, including conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM) ), etc., and non-volatile technologies, such as dielectric random access memory (FeRAM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH), etc., have non-volatile, long cycle life ( >10 13 time), small component size, low power consumption, multi-level storage, high-speed reading, anti-radiation, high and low temperature resistance (-55-125 ° C), anti-vibration, anti-electronic interference and simpl...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/34H01L45/00G11C16/02G11C11/56G11B7/241
Inventor 宋志棠陈邦明宋三年
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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