Preparation method for metal Nano structure array

A technology of metal nanostructures and nanostructures, which is applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of limited lithographic resolution, high price, and difficulty in realizing the controllable growth of nanostructures.

Active Publication Date: 2010-06-23
NAT UNIV OF DEFENSE TECH
View PDF0 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The "top-down" process mainly refers to the transfer of patterns through lithography and other technologies, and the manufacture of nanostructures through etching and other processes, but this method is limited by the resolution of lithography and the price is relatively expensive; " Bottom-up processes mainly include self-assembly, nanomanipulation, and gene-controlled growth technologies. These methods are low in cost, but the manufacturing efficiency is also low, and it is difficult to achieve controllable growth of nanostructures.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for metal Nano structure array
  • Preparation method for metal Nano structure array
  • Preparation method for metal Nano structure array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Utilize the preparation method of the present invention to make the gold nano-prism structure array (square prism) that size is less than 100nm, it specifically comprises the following steps:

[0045] 1. Preparation of monolayer ordered silica nanospheres densely arranged

[0046] 1.1 Prepare the silicon wafer: first select a (110) crystal-oriented silicon wafer with a size of 25 mm × 25 mm × 0.5 mm as the substrate, and put the silicon wafer into acetone, ethanol, and deionized water for ultrasonic cleaning for 30 minutes, and then put hydrogen peroxide and 98 % concentrated sulfuric acid solution was heated to 80°C, and the ultrasonically cleaned silicon chip was soaked in it for 1 hour. Soak in the washing solution at ℃ for 1 hour, take it out and rinse it repeatedly to obtain a clean and hydrophilic surface of the silicon wafer, and place it in absolute ethanol for later use;

[0047] 1.2 Prepare the silica nanosphere sol system: take silica nanospheres with an ave...

Embodiment 2

[0061] Utilizing the preparation method of the present invention to make a copper nano cylinder array with a diameter of 120nm to 180nm and a height of 80nm, it specifically includes the following steps:

[0062] 1. Preparation of monolayer ordered silica nanospheres densely arranged

[0063] 1.1 Prepare the silicon wafer: first select a (100) crystal-oriented silicon wafer with a size of 25mm×25mm×0.5mm as the substrate, and put the silicon wafer into acetone, ethanol, and deionized water for ultrasonic cleaning for 30 minutes, and then put hydrogen peroxide and 98 % concentrated sulfuric acid solution was heated to 80°C, and the ultrasonically cleaned silicon chip was soaked in it for 1 hour. Soak in the washing solution at ℃ for 1 hour, take it out and rinse it repeatedly to obtain a clean and hydrophilic surface of the silicon wafer, and place it in absolute ethanol for later use;

[0064] 1.2 Prepare the silica nanosphere sol system: take silica nanospheres with an avera...

Embodiment 3

[0077] Utilize the preparation method of the present invention to make the aluminum nano cap structure array that diameter is about 300nm, height is about 100nm, it specifically comprises the following steps:

[0078] 1. Preparation of monolayer ordered silica nanospheres densely arranged

[0079] 1.1 Prepare the silicon wafer: first select a (100) crystal-oriented silicon wafer with a size of 25mm×25mm×0.5mm as the substrate, and put the silicon wafer into acetone, ethanol, and deionized water for ultrasonic cleaning for 30 minutes, and then put hydrogen peroxide and 98 % concentrated sulfuric acid solution was heated to 80°C, and the ultrasonically cleaned silicon chip was soaked in it for 1 hour. Soak in the washing solution at ℃ for 1 hour, take it out and rinse it repeatedly to obtain a clean and hydrophilic surface of the silicon wafer, and place it in absolute ethanol for later use;

[0080] 1.2 Prepare the silica nanosphere sol system: take silica nanospheres with an ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
diameteraaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method for a metal Nano structure array. The preparation method adopts a silicon slice as a substrate, and silica Nano spheres are coated on the surface of the substrate of the silicon slice in a rotary manner after being uniformly dispersed so as to form a single-layer sequential silica Nano sphere compact array; a single-layer sequential silica Nano sphere non-compact array is formed by adopting an induction coupling plasma etching method; a metal layer is deposited on the non-compact array and the silica Nana spheres are removed, so as to obtain a metal Nano hole array reticle mask; corrosion is carried out on the silicon slice by combining different corroding properties of different silicon slices, so as to obtain Nano structure array templates with different characteristics in shape and appearance after the reticle mask is removed; finally, different metal materials are deposited on the templates, and the multi-material metal Nano structure array with diversified characteristics in shape and appearance can be obtained after the templates are separated. With the advantages of low cost, high efficiency, good compatibility and the like, the preparation method provides convenience for studying the optical nature, magnetic performance, catalytic property and the like of the metal Nano structure array.

Description

technical field [0001] The invention relates to a method for preparing an ultramicrostructure, in particular to a method for preparing a metal nanostructure. Background technique [0002] In recent years, metal nanostructure arrays (especially noble metal nanostructure arrays, such as gold, silver, etc.) are attracting more and more attention due to their unique physical and chemical properties. Due to the plasmon resonance generated by the collective excitation of surface free electrons, metal nanostructure arrays such as gold, silver, and copper have good optical properties, and can be effectively adjusted by changing the size, shape, and array combination state of the monomers. Therefore, they have a very wide application value in the fields of optical filters, plasmonic waveguides, biological / chemical sensors, and substrate materials for surface-enhanced spectroscopy, and the controllable preparation of two-dimensional metal nanostructure arrays will be the key to this ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 吴学忠董培涛肖定邦邸荻吴小梅陈志华张旭陈骄
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap