Tungsten titanium target material with high purity and high tungsten-rich phase, and preparation method thereof

A tungsten-rich phase, high-purity technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of excessive grain size and long duration, reduce the sintering temperature and improve the density , the effect of increasing the sintering temperature

Active Publication Date: 2010-06-23
有研资源环境技术研究院(北京)有限公司
View PDF0 Cites 35 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if it lasts too long at high temperature, it will cause adverse consequences of excessive grain size.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] W powder (99.99%) with an average particle size of 3 μm and Ti powder (99.99)% with an average particle size of 40 μm are weighed in a ratio of 90:10 by weight, ball milled for 6 hours, mixed evenly, and placed on the workpiece size In a graphite mold of 100×100mm, after cold pressing, place it in a hot pressing furnace. Vacuum down to 1×10 -1 After Pa, start to heat up to 600°C and keep it warm for 30 minutes; then raise the temperature, fill with Ar gas, and pressurize at the same time, raise the temperature to 1350°C, and the pressure is 20MPa. 1000°C, start to release the pressure, after cooling for 12 hours, the temperature in the furnace drops to 70°C, and the material is discharged. Then grind the blank, put the processed target into pure water containing cleaning agent, and perform ultrasonic cleaning. After cleaning for 1 hour, change to pure water and perform ultrasonic cleaning again for 1 hour; after cleaning, put the target into Dry in a vacuum drying ove...

Embodiment 2

[0037] W powder (99.99%) with an average particle size of 3 μm, Ti powder (99.99)% with an average particle size of 40 μm, and Cr powder (99.9%) with an average particle size of 10 μm, in a weight ratio of 87:10:3 Weigh, ball mill for 5 hours, mix evenly, place in a graphite mold with a workpiece size of 100×100mm, and place in a hot-press furnace after cold pressing. Vacuum down to 1×10 -1 After Pa, start to heat up to 600°C and keep it warm for 30 minutes; then raise the temperature, fill with Ar gas, and pressurize at the same time, raise the temperature to 1350°C, and the pressure is 20MPa. 1000°C, start to release the pressure, after cooling for 12 hours, the temperature in the furnace drops to 70°C, and the material is discharged. Then grind the blank, put the processed target into pure water containing cleaning agent, and perform ultrasonic cleaning. After cleaning for 2 hours, change to pure water and perform ultrasonic cleaning for 2 hours again; after cleaning, put ...

Embodiment 3

[0039] W powder (99.99%) with an average particle size of 3 μm, Ti powder (99.99)% with an average particle size of 38 μm and Mo powder (99.9%) with an average particle size of 3 μm, in a weight ratio of 85:10:5 Weigh, ball mill for 3 hours, mix evenly, place in a graphite mold with a workpiece size of 100×100mm, and place in a hot-press furnace after cold pressing. Vacuum down to 1×10 -1 After Pa, start to heat up to 700°C, keep it warm for 30 minutes, and keep the vacuum of the system at about 100Pa; then raise the temperature, fill with Ar gas, and pressurize at the same time, raise the temperature to 1450°C, and the pressure is 30MPa. After holding the heat for 1 hour, turn off the heating The power supply starts to cool down, the temperature drops to 900°C, and the pressure release starts. After cooling for 12 hours, the temperature in the furnace drops to 70°C, and the material is discharged. Then grind the blank, put the processed target into pure water containing clea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention relates to a refractory alloy tungsten titanium target material and a preparation method thereof, in particular to a tungsten titanium target material with high purity and high content of tungsten-rich phase, and a hot-pressing preparation method thereof, which belongs to the technical field of refractory alloy target materials. The method prepares high-density tungsten alloy targetmaterial by taking high-purity W powder and Ti powder, as well as high-purity Mo, Cr, Ta, Nb and other additive metal powder as raw materials and adopting a high-temperature high-pressure hot-pressing molding process, wherein the relative density of the target material reaches 95 to 99 percent, and the content of tungsten-rich phase reaches 80 to 93 percent. Relative to the prior art, the method adds part of high-purity Nb, Mo, Cr, Ta and other metal powder while mixing materials so as to stabilize the tungsten-rich phase in alloy, increase the content of the tungsten-rich phase in the alloy and improve the using quality of the target material.

Description

technical field [0001] The invention relates to a refractory alloy tungsten-titanium target material and a preparation method thereof, in particular to a high-purity tungsten-titanium target material with high tungsten-rich phase content and a hot-pressing preparation method thereof, belonging to the technical field of refractory alloy target materials. Background technique [0002] At present, the integrated circuit wiring technology mainly includes traditional Al wiring and emerging Cu wiring, but Al and Cu are connected to the dielectric layer Si or SiO 2 Diffusion speed is very fast, they enter Si or SiO 2 It will act as a deep-level main impurity, which will greatly reduce the performance of the device. Therefore, effective measures must be taken to prevent this diffusion, that is, a diffusion barrier layer is introduced between the dielectric layer and the wiring metal. A large number of studies have shown that the W / Ti alloy barrier layer with Ti accounting for 10-20...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C22C27/04C22C1/04B22F3/12
Inventor 储茂友王星明张碧田段华英邓仕斌韩沧潘德明陈洋
Owner 有研资源环境技术研究院(北京)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap