Method for preparing gallium-doped p-type crystalline silicon

A crystalline silicon, p-type technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of reducing the comprehensive electrical properties of silicon wafers, achieve cost feasibility, reduce deviation range, and increase Ga content Effect

Inactive Publication Date: 2010-08-25
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this compensation material meets the requirements of battery preparation in term

Method used

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  • Method for preparing gallium-doped p-type crystalline silicon
  • Method for preparing gallium-doped p-type crystalline silicon
  • Method for preparing gallium-doped p-type crystalline silicon

Examples

Experimental program
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Example Embodiment

[0027] Example 1

[0028] Under the action of a direct current electric field, a Ga-doped p-type polycrystalline silicon ingot is prepared by a directional solidification process, as shown in Figure 3, the following steps are adopted:

[0029] 1) Calculate the Ga doping concentration required for the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant.

[0030] 2) Set the cathode 13 at the bottom of the crucible 1, put the silicon material and dopant into the crucible 1 according to a certain proportion, and then set the anode 14 above the silicon material, connect the cathode 13 with the negative electrode of the DC power supply 11 with a wire 12, the anode 14 Connect with the positive electrode. When arranging the electrodes, make sure that the direction of the electric field is parallel to the growth direction of the crystal. The anode 14 and the cathode 13 are made of high-purity graphite material, and ...

Example Embodiment

[0035] Example 2

[0036] Under the action of a direct current electric field, the Ga-doped p-type single crystal silicon rod is drawn by the CZ method, see Figure 4, and the following steps are adopted:

[0037] 1) Calculate the required doping concentration of the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant.

[0038] 2) Crucible 1 made of high-purity graphite is used as the anode, connected to the positive electrode of the power supply 11 with a wire 12; put the silicon material and dopant into the crucible 1 in a certain proportion, heat the silicon material to melt, and adjust the temperature control system to start Pulling, after completing the necking and shoulder growth and entering the equal-diameter growth stage, connect the growth crystal 3 as the cathode to the negative electrode of the power supply 11.

[0039] 3) Start to apply a DC electric field to the silicon liquid 2, and the voltage ...

Example Embodiment

[0043] Example 3

[0044] Using the FZ method to grow Ga-doped p-type single crystal silicon rods under the action of a DC electric field, see Figure 5, and use the following steps to achieve:

[0045] 1) Calculate the required doping concentration of the corresponding silicon material according to the electrical performance requirements of the silicon wafer, and prepare the dopant. The dopant can be added in advance to the silicon rod 5 to be melted or added during zone melting.

[0046] 2) Assuming that the induction coil 20 moves from bottom to top, the growing crystal 3 is used as the cathode, and the crystal to be melted 5 is used as the anode, and the wires 12 are connected to the negative and positive electrodes of the power supply 11 respectively.

[0047] 3) Increase the power of the induction coil 20 to melt the part of the silicon rod 5 to be melted, and start to apply an electric field to the silicon liquid 2. The voltage between the electrodes is 0.1-10V or the current den...

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Abstract

The invention discloses a method for preparing Ga-doped p-type crystalline silicon. The method is characterized in that a DC electric field parallel to a crystal growth direction is applied to molten silicon liquid during the crystal growth of polycrystalline silicon ingots or monocrystalline silicon rods so as to allow Ga dopant in liquid phase to migrate to a liquid-solid interface; under the dual action of the electric field and solidification segregation, a Ga high-concentration area is formed in the liquid phase of a crystal growth apex so as to improve the doping concentration of subsequently growing crystals, weaken the influence of solidification segregation and obtain p-type polycrystalline ingots or p-type monocrystalline rods of which the Ga content is uniformly distributed in the crystal growth direction; the deviation range of resistivity is reduced; the yield of materials is improved, so that the production cost of silicon chips is reduced and the industrial application of Ga-doped p-type silicon chips has cost feasibility. Meanwhile, the method also applies to the p-type doping with small segregation coefficient of Al, In and the like.

Description

technical field [0001] The invention relates to a growth method of crystalline silicon, in particular to a preparation method of gallium (Ga) doped p-type crystalline silicon. Background technique [0002] Crystalline silicon solar cells (including monocrystalline and polycrystalline) are the mainstream products of photovoltaic power generation. The silicon wafers used to produce batteries are obtained from polycrystalline silicon ingots or monocrystalline silicon rod slices, so the electrical properties required by silicon wafers must be completed during the crystal growth process. Generally, during the growth process of crystalline silicon, group III elements are doped to obtain p-type silicon, and group V elements are doped to obtain n-type silicon, and the resistivity of the silicon wafer is controlled between 0.5 and 3Ω·cm by adjusting the doping concentration. Meet the requirements for preparing solar cells. As the doping of silicon, a shallow energy level must be for...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B30/02
Inventor 徐璟玉胡建锋熊斌蒋君祥戴宁褚君浩
Owner 上海太阳能电池研究与发展中心
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