Method for preparing barium dititanate (BaTi2O5) ferroelectric film on silicon (Si) single crystal substrate

A ferroelectric thin film and substrate technology, applied in the field of preparing BaTi2O5 ferroelectric thin film, can solve the problems of difficult processing, unfavorable semiconductor device integration, high price of MgO single crystal substrate, etc., and achieves the effect of realizing compatibility and overcoming high price.

Inactive Publication Date: 2010-09-01
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although MgO single crystal substrate and BaTi 2 o 5 Ferroelectric thin films have lattice matching and good thermal and chemical stability, but MgO single crystal substrates are expensive, difficult to process, and unfavorable for integration with traditional semiconductor devices

Method used

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  • Method for preparing barium dititanate (BaTi2O5) ferroelectric film on silicon (Si) single crystal substrate
  • Method for preparing barium dititanate (BaTi2O5) ferroelectric film on silicon (Si) single crystal substrate
  • Method for preparing barium dititanate (BaTi2O5) ferroelectric film on silicon (Si) single crystal substrate

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Embodiment 1

[0017] A preparation of BaTi on Si single crystal substrate 2 o 5 The method for ferroelectric thin film, it comprises the steps:

[0018] 1) The MgO film buffer layer was prepared by pulsed laser deposition technology: MgO ceramics with a purity of 98.5% and a density of 93% were used as the target material, and the substrate material was Si single crystal grown along the a-axis direction. The experimental process was as follows: figure 1 As shown: First, the substrate 2 and the target material 3 are respectively sent into the deposition chamber 1 of the pulsed laser deposition equipment and the deposition chamber 1 is evacuated to 10 -4 Pa, the substrate 2 and the target 3 are uniformly rotated at a speed of 20 rpm, and the vertical distance between them is maintained at 50mm; then, the substrate 2 is heated to 400°C, and the high-power pulse generated by the laser 5 Laser beam (laser energy density 3.5J / cm 2 ) is irradiated on the surface of the target 3 after being focu...

Embodiment 2

[0023] A preparation of BaTi on Si single crystal substrate 2 o 5 The method for ferroelectric thin film, it comprises the steps:

[0024] 1) The MgO thin film buffer layer was prepared by pulsed laser deposition technology: MgO ceramics with a purity of 99% and a density of 91% were used as the target material, and the substrate material was Si single crystal grown along the a-axis direction. respectively into the deposition chamber of the pulsed laser deposition equipment and vacuumize the deposition chamber to 10 -5 Pa, the substrate and the target are rotated uniformly at a speed of 20 rpm, and the vertical distance between the two is kept at 50mm; then, the substrate is heated to 300°C, and oxygen with a purity of 99.99% is introduced to ensure the deposition chamber. The oxygen pressure is 0.1Pa; then the energy density is 3J / cm 2 The pulsed laser beam is irradiated on the target surface to ablate the target surface at high temperature and further generate a high-temp...

Embodiment 3

[0027] A preparation of BaTi on Si single crystal substrate 2 o 5 The method for ferroelectric thin film, it comprises the steps:

[0028] 1) The MgO thin film buffer layer was prepared by pulsed laser deposition technology: MgO ceramics with a purity of 98.7% and a density of 95% were used as the target material, and the substrate material was Si single crystal grown along the a-axis direction. respectively into the deposition chamber of the pulsed laser deposition equipment and vacuumize the deposition chamber to 10 -4 Pa, the substrate and the target are rotated uniformly at a speed of 20 rpm, and the vertical distance between the two is kept at 50mm; then, the substrate is heated to 450°C, and oxygen with a purity of 99.999% is introduced to ensure the deposition chamber. The oxygen pressure is 1Pa; then the energy density is 4J / cm 2 The pulsed laser beam is irradiated on the target surface to ablate the target surface at high temperature and further generate a high-tem...

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Abstract

The invention relates to a method for preparing a barium dititanate (BaTi2O5) ferroelectric film on a silicon (Si) single crystal substrate. The method comprises the following steps of: 1) conveying the Si single crystal substrate growing along the direction of an a axis and a magnesium oxide (MgO) ceramic target material into a settling chamber and vacuumizing the chamber; heating the substrate and introducing high-purity oxygen; irradiating pulse laser beams on the surface of the target material to make the surface of the target material generate plasma plume; and settling the plasma plume on the substrate to form a MgO film buffer layer; and 2) conveying the Si single crystal substrate on which the MgO film buffer layer is settled and a BaTi2O5 ceramic target material into the settling chamber and vacuumizing the chamber; heating the substrate and introducing the high-purity oxygen; irradiating the pulse laser beams on the surface of the target material to make the surface of the target material generate plasma plume; and settling the plasma plume on the substrate to form a BaTi2O5 ferroelectric film. In the method, the single-phase BaTi2O5 ferroelectric film, which can preferably grow along the direction of a b axis on the Si single crystal substrate, can be obtained by building the MgO film buffer layer matched with the BaTi2O5 ferroelectric film; the compatibility of the BaTi2O5 ferroelectric film and a semiconductor process can be achieved; and the BaTi2O5 ferroelectric film is favorable for integrating with the traditional semiconductor device.

Description

technical field [0001] The invention relates to a method for preparing BaTi on a Si single crystal substrate 2 o 5 method for ferroelectric thin films. Background technique [0002] Ferroelectric thin films have good dielectric, piezoelectric, ferroelectric, pyroelectric, photoelectric and nonlinear optical properties, and have a wide range of applications in the fields of microelectronics, optoelectronics, integrated optics and microelectromechanical systems. At present, lead-containing ferroelectric films such as lead titanate and lead zirconate titanate are widely used, but these materials will bring harm to the environment and human health during the preparation and use. Therefore, the further development of new lead-free and environmentally friendly ferroelectric thin film materials has become one of the hot spots in the current research on new materials. BaTi 2 o 5 Thin film is a lead-free ferroelectric material developed in recent years with excellent dielectric ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
Inventor 张联盟王传彬沈强王芳李凌
Owner WUHAN UNIV OF TECH
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