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Method for growing p-type ZnO crystal thin film by Li-F codoping

A co-doping, p-type technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., to achieve the effect of good electrical properties

Inactive Publication Date: 2010-09-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The pulsed laser deposition method has the advantages of easy control of deposition parameters, easy to keep the composition of the film consistent with the target, real-time doping and good quality of the grown film, but so far no Li-F co-doping has been performed by this method. Growth of p-type ZnO crystal thin films

Method used

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  • Method for growing p-type ZnO crystal thin film by Li-F codoping
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  • Method for growing p-type ZnO crystal thin film by Li-F codoping

Examples

Experimental program
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Effect test

Embodiment 1

[0019] 1) get the zinc oxide, zinc fluoride and lithium carbonate powder that purity is respectively 99.99%, Li molar content is 0.6%, F molar content is 0.3%, ZnO, ZnF 2 and Li 2 CO 3 The mixed powder is poured into an agate ball cup, placed on a ball mill for ball milling, and the time of ball milling is 24 hours. There are two purposes of ball milling: the first is to make ZnO, ZnF 2 and Li 2 CO 3 Mix the powder evenly to ensure the uniformity of the prepared target; secondly, to mix ZnO, ZnF 2 and Li 2 CO 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0020] After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 50 mm. Pre-fired at 600°C for 1 hour, and then sintered at 1060°C for 3 hours to obtain the target.

[0021] 2) Using glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device. The vacuum degree of ...

Embodiment 2

[0024] 1) get the zinc oxide, zinc fluoride and lithium carbonate powder that purity is respectively 99.99%, the Li molar content is 0.9%, the F molar content is 0.3%, ZnO, ZnF 2 and Li 2 CO 3 The mixed powder is poured into an agate ball cup, placed on a ball mill for ball milling, and the time of ball milling is 24 hours. There are two purposes of ball milling: the first is to make ZnO, ZnF 2 and Li 2 CO 3 Mix the powder evenly to ensure the uniformity of the prepared target; secondly, to mix ZnO, ZnF 2 and Li 2 CO 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0025] After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 50 mm. Then sintered at 800°C for 3 hours to obtain ZnF-doped 2 and Li 2 O ZnO ceramic target.

[0026] 2) Using glass as the substrate, clean the substrate surface and put it into the growth chamber of the pulsed laser deposition device. The vacuum degre...

Embodiment 3

[0029] 1) get the zinc oxide, zinc fluoride and lithium carbonate powder that purity is respectively 99.99%, Li molar content is 0.6%, F molar content is 0.3%, ZnO, ZnF 2 and Li 2 CO 3 The mixed powder is poured into an agate ball cup, placed on a ball mill for ball milling, and the time of ball milling is 24 hours. There are two purposes of ball milling: the first is to make ZnO, ZnF 2 and Li 2 CO 3 Mix the powder evenly to ensure the uniformity of the prepared target; secondly, to mix ZnO, ZnF 2 and Li 2 CO 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder.

[0030]After ball milling, the powder was pressed into discs with a thickness of 3 mm and a diameter of 50 mm. Pre-fired at 600°C for 1 hour, and then sintered at 1060°C for 3 hours to obtain the target.

[0031] 2) Using quartz as the substrate, clean the surface of the substrate and put it into the growth chamber of the pulsed laser deposition device. The vacuum deg...

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Abstract

The invention discloses a method for growing a p-type ZnO crystal thin film by Li-F codoping. The pulse laser deposition method is adopted. A ZnF2-dooped and Li2O-doped ZnO ceramic target is used as the target and prepared from pure zinc oxide powder, pure zinc fluoride powder and pure lithium carbonate powder by ball milling, press forming and sintering, wherein the molar content of the zinc fluoride is 0.3 percent and the molar content of the lithium oxide is 0.3 to 0.9 percent; and the p-type ZnO crystal thin film is grown on a substrate in a growth chamber of a pulse laser deposition device under the growth atmosphere of pure oxygen, wherein the pressure intensity of the oxygen is 5 to 20Pa, the laser frequency is 3 to 5Hz and the growth temperature is 300 to 500 DEG C. The method of the invention can realize real-time doping, and the doping density is controlled by adjusting the growth temperature and the molar content of Li and F in the target. The p-type ZnO crystal thin film prepared by the method of the invention has high electrical property, high repeatability and high stability.

Description

technical field [0001] The invention relates to a growth method of p-type ZnO crystal thin film, especially a method for growing p-type ZnO crystal thin film by Li-F co-doping. Background technique [0002] ZnO is a kind of II-VI wide bandgap semiconductor, which has its unique advantages. The ionization energy is 26meV, so it is easier to achieve exciton gain at room temperature or higher temperature, and it is a material with great potential to realize high-power semiconductor laser devices. However, the key to the application of ZnO in optoelectronic devices is to realize stable, reliable and low-resistance p-type ZnO thin films. Due to the existence of many intrinsic donor defects in ZnO (such as Zn i , V o etc.) and unintentionally doped H and other impurities, usually n-type. The presence of these donor defects can have a strong self-compensation effect on the doped acceptor impurities, so it is difficult to achieve P-type doping of ZnO. [0003] It has been repor...

Claims

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Application Information

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IPC IPC(8): C23C14/28
Inventor 朱丽萍曹铃叶志镇
Owner ZHEJIANG UNIV
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