Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High-transmissivity flexible transparent conductive film and preparation method thereof

A transparent conductive film, high transmittance technology, applied in conductive materials, conductive materials, cable/conductor manufacturing, etc., can solve the problems of low film transmittance and single film structure, and achieve low cost and photoelectric performance. Improved, improved light transmission efficiency

Active Publication Date: 2010-10-20
JIANGSU KANGLI ELECTRONICS TECH
View PDF3 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of film layer structure is relatively simple, so that the transmittance of the film layer is low, which makes it restrictive in the application of optical grade devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-transmissivity flexible transparent conductive film and preparation method thereof
  • High-transmissivity flexible transparent conductive film and preparation method thereof
  • High-transmissivity flexible transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The roll-to-roll vacuum coating machine designed and manufactured by Shenyang Fushen Vacuum Equipment Co., Ltd. is used to prepare the multi-layer flexible transparent conductive film of the present invention by using DC magnetron sputtering and intermediate frequency magnetron sputtering methods. Four samples A, B, and C The specific preparation steps of D and D are as follows:

[0025] a. Put the substrate material into the vacuum chamber, and evacuate the vacuum chamber until the pressure in the chamber is lower than 5.0×10 -3 Pa, then bombard the substrate with an ion source, and the bombardment energy is >700ev;

[0026] b. Fill the vacuum chamber with oxygen and argon, the purity of the oxygen and argon in the vacuum chamber is 99.999%, after filling the oxygen and argon, control the pressure in the vacuum chamber to be 2×10 -1 Pa~5×10 -1 Within the range of Pa, the vacuum gauge and mass flow meter are used to monitor the vacuum degree of oxygen and argon filled...

Embodiment 2

[0033] Steps "a", "b" and "c" are the same as in Example 1, and step "d" is to use In with a purity of 99.99%. 2 o 3 Powder with 99.99% pure SnO 2 The powder is evenly mixed, and sintered into a target by conventional hot isostatic pressing method, and the target is used to deposit a thin film by DC magnetron sputtering technology; wherein, the substrate temperature is -10-20°C, and the sputtering power is DC 500 ~1500 watts, the sputtering rate is 0.04~3nm / s.

[0034] After the H sample is sputtered on the target, a layer of SiO is sputtered 2 , with a thickness of 1 nm.

[0035] The surface resistance of the ITO thin film reaches 10-15Ω / port, and the average visible light transmittance is higher than 90%. The experimental data and the performance parameters of the prepared transparent conductive film are as shown in Table 2 for four samples E, F, G and H:

[0036]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-transmissivity flexible transparent conductive film and a preparation method thereof. The high-transmissivity flexible transparent conductive film is characterized in that a film system of the transparent conductive film is in a multi-film layer structure made of ITO / SiO2 / SiO2 / substrate material / SiO2 / SiO2 or SiO2 / ITO / SiO2 / SiO2 / substrate material / SiO2 / SiO2; main materials ITO are In2O3 and SnO2 and metals of In and Sn, wherein the mass percentage of Sn and In elements in the ITO is 78.9-85.4; the mass ratio of the Sn element to the In element is (40-49):(60-51); and the film thickness range is 5-30 nm. The film has firm formation, favorable conductivity and visible light transparency and can be applied to the fields of touch screen liquid crystal display screens, electroluminescent displays, solar batteries, thin film transistors, organic and inorganic semiconductor lasers and heat-insulating and energy-saving glass.

Description

technical field [0001] The invention relates to a flexible transparent conductive film with high transmittance and its preparation, which can be widely used in the technical fields of touch screen liquid crystal display, electroluminescence display, solar cell, thin film transistor, organic and inorganic semiconductor laser, heat insulation and energy saving glass, etc. method. Background technique [0002] At present, tin (Sn)-doped indium oxide (Indium oxide) is widely used in the world for transparent conductive films. 2 o 3 ) thin film (referred to as ITO), the production process and production equipment have been greatly developed. However, this kind of film layer structure is relatively simple, so that the transmittance of the produced film layer is low, which makes it restrictive in the application of optical grade devices. [0003] The high transmittance flexible transparent conductive film of the present invention is a kind of transparent to visible light and can...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01B5/14H01B1/00H01B13/00G06F3/041G02F1/133
Inventor 朱殿荣李俊赖勇建曹俊
Owner JIANGSU KANGLI ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products