Silicon-based solar cell structure taking broad-spectrum absorption layer as backlight surface and production method thereof
A technology of solar cells and absorbing layers, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as non-absorption, and achieve the effects of offsetting short carrier life, improving photoelectric conversion efficiency, and increasing photogenerated current
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Embodiment 1
[0054] refer to figure 2 , is a solar cell structure diagram with black silicon as the backlight doped broad-spectrum absorption layer, the implementation process is as follows: on the back of the silicon-based substrate, use the thermal oxygen diffusion of phosphorus or arsenic to form a concentration from the surface to the inside Decreasing n-type gradient layer; on the front side, a p-type gradient layer from the surface to the inside is formed by using the thermal oxygen diffusion of boron or gallium; on the p-type gradient layer, a pyramid-like or porous silicon fabric is formed by alkaline or acidic chemical etching The surface is structured, or the silicon cone anti-reflection surface layer is formed by reactive ion etching or laser irradiation to form the light-trapping layer on the light-facing surface; the surface of the n-type gradient layer on the back is placed in a chalcogenide impurity atmosphere, and the femtosecond or picosecond Scanning by laser irradiation...
Embodiment 2
[0056] refer to image 3 , is a solar cell structure diagram with melted and solidified quasi-planar silicon as the backlight doped broad-spectrum absorber layer, and its implementation process is similar to that of Example 1: on the front side of the silicon-based substrate, thermal oxygen diffusion of boron or gallium is used, Form a p-type gradient layer from the surface to the inside; form a pyramid-like or porous silicon texture surface on the p-type gradient layer by alkaline or acidic chemical etching, or form a silicon cone anti-reflection surface layer by reactive ion etching or laser irradiation , constituting the light-trapping layer on the light-facing surface; on the back of the battery, the thermal oxygen diffusion of phosphorus or arsenic is used to form an n-type gradient layer whose concentration decreases from the surface to the inside; the surface of the n-type gradient layer on the back is placed in a chalcogenide impurity atmosphere In the process, the ene...
Embodiment 3
[0058] refer to Figure 4 , is a structural diagram of a solar cell using ion-implanted doped annealed planar silicon as a doped broad-spectrum absorbing layer. The implementation process is similar to the above-mentioned embodiment, and the main difference is the method of making a doped broad-spectrum absorbing layer on an n-type gradient layer. Different: on the n-type gradient layer by ion implantation doping method, implant chalcogenide ions, and then quickly anneal in the nitrogen / hydrogen mixed atmosphere to restore the lattice damage, which realizes the production of ion implantation doped annealed planar silicon . Then complete the fabrication of the subsequent battery structure according to the conventional process.
[0059] In Examples 2 and 3, the doping of the broad-spectrum absorbing layer achieves planarization, which is beneficial to the growth of subsequent dielectric films and the fabrication of electrodes.
[0060] In each of the above embodiments, the p-t...
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