Boron-aluminum common gettering method for silicon slice
A technology of boron-aluminum and silicon wafers, applied in the field of aluminum-boron co-gettering of silicon wafers, to achieve the effects of low energy consumption, uniform gettering layer, and low secondary pollution
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Embodiment 1
[0035] (1) Purchase the aluminum paste of the RX8 model from Guangzhou Ruxing Technology Co., Ltd., add diboron trioxide in the aluminum paste, stir evenly, and obtain the mixed slurry; wherein, the particle size of diboron trioxide is 1- 4μm, the mass fraction of boron in the mixed slurry is 3%;
[0036] (2) silicon chip is cleaned with RCA liquid, dry, and wherein RCA liquid comprises No. 1 liquid and No. 2 liquid, and No. 1 liquid is made of ammonia (mass percentage concentration is 30%), hydrogen peroxide (mass percentage concentration is 30%) and remove Ionized water is mixed at a volume ratio of 1:1:5, and the No. 2 liquid is mixed with hydrochloric acid (mass percentage concentration of 36%), hydrogen peroxide (mass percentage concentration of 30%) and deionized water at a volume ratio of 1:1:6 It is made; cleaning with RCA solution, that is, cleaning with No. 1 solution and No. 2 solution in sequence;
[0037] (3) screen-print or spin-coat the mixed slurry prepared in...
Embodiment 2
[0045] Same as embodiment 1, its difference is only: heat treatment takes rapid heat treatment, that is, step (4) is:
[0046] The silicon wafer obtained in step (3) was placed in a rapid heat treatment furnace and heated at 950° C. for 2 minutes under the protection of argon, and the silicon wafer was naturally cooled along with the furnace.
[0047] Carry out performance test to embodiment sample, test method and condition are the same as embodiment one, test result is: the metal impurity content before test is 5.6 * 10 13 atoms / cm 3 ; The metal impurity content after the test was 7.7×10 12 atoms / cm 3 .
Embodiment 3
[0049] (1) buy the aluminum paste of AL53-110 model from Fu Lu (Ferro) new material company, add diboron trioxide in aluminum paste, stir, obtain mixed slurry; Wherein, the particle size of diboron trioxide is 2-5μm, the mass fraction of boron in the mixed slurry is 2.8%;
[0050] (2) silicon chip is cleaned with RCA liquid, dry, and wherein RCA liquid comprises No. 1 liquid and No. 2 liquid, and No. 1 liquid is made of ammonia (mass percentage concentration is 30%), hydrogen peroxide (mass percentage concentration is 30%) and remove Ionized water is mixed at a volume ratio of 1:1:5, and the No. 2 liquid is mixed with hydrochloric acid (mass percentage concentration of 36%), hydrogen peroxide (mass percentage concentration of 30%) and deionized water at a volume ratio of 1:1:6 It is made; cleaning with RCA solution, that is, cleaning with No. 1 solution and No. 2 solution in sequence;
[0051] (3) screen printing or spin-coating the mixed slurry prepared in step (1) on both s...
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