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Method for quickly preparing GdBCO film through chemical solution deposition

A chemical solution deposition, rapid technology, applied in the direction of solid-state chemical plating, manufacturing/processing of superconductor devices, coating, etc., can solve the problems of reduced production rate and increased uncontrollable factors, and achieve low cost and simple and easy preparation method Simple effect of operation and experimental setup

Inactive Publication Date: 2012-06-27
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This process increases the uncontrollable factors in the production process and reduces the preparation rate

Method used

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  • Method for quickly preparing GdBCO film through chemical solution deposition
  • Method for quickly preparing GdBCO film through chemical solution deposition
  • Method for quickly preparing GdBCO film through chemical solution deposition

Examples

Experimental program
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Embodiment 1

[0022] (1) Preparation of GdBCO precursor solution: dissolving gadolinium acetate, barium trifluoroacetate and copper benzoate in methanol at an atomic ratio of Gd: Ba: Cu=1: 2: 3, then performing vacuum distillation to remove impurity water, and then Add chelating agent ethanolamine, finally obtain GdBCO precursor solution with methanol fixed solution; The total concentration of gadolinium, barium and copper metal ion in the described GdBCO precursor solution is 1mol / L, and the addition amount of described chelating agent ethanolamine is copper ion molar weight 5 times;

[0023] (2) Precursor solution coating: the GdBCO precursor solution described in step (1) is evenly coated on the lanthanum aluminate single crystal substrate by spin coating method, and then dried at a temperature of 120 ° C to obtain a surface adhesion of 1 μm Lanthanum aluminate single crystal substrate of cured film;

[0024] (3) High-temperature heat treatment: place the lanthanum aluminate single crys...

Embodiment 2

[0028] The preparation method of this embodiment is the same as that of Example 1, and the difference is that the chelating agent is triethanolamine, and the amount of the chelating agent added is 3 times the molar amount of copper ions; the drying temperature is 135°C, and the cured film The thickness is 1.5 μm; during the high temperature heat treatment process, the temperature is 800°C.

[0029] image 3 It is the resistance-temperature curve (R-T) figure of the LAO / GdBCO film prepared by the present embodiment (the ordinate is resistance, and the unit is ohm; The abscissa is temperature, and the unit is K), the results show that the film has a good superconducting transition, and the transition end temperature It is 92K; the Jc of the film is 1.8MA / cm under 77K zero field 2 , showing excellent performance.

Embodiment 3

[0031] (1) Preparation of GdBCO precursor solution: dissolving gadolinium acetate, barium trifluoroacetate and copper benzoate in methanol at an atomic ratio of Gd: Ba: Cu=1: 2: 3, then performing vacuum distillation to remove impurity water, and then Add the chelating agent triethanolamine, and finally obtain the GdBCO precursor solution with methanol fixed solution; the total concentration of gadolinium, barium and copper metal ions in the GdBCO precursor solution is 1.5mol / L, and the addition amount of the chelating agent triethanolamine is copper ion 5 times the molar weight;

[0032] (2) Precursor solution coating: uniformly coat the GdBCO precursor solution described in step (1) on the NiW / Y by dip coating method 2 O 3 / YSZ / CeO 2buffer layer, and then dried at a temperature of 150°C to obtain NiW / Y with a 2μm cured film attached to the surface 2 O 3 / YSZ / CeO 2 The buffer layer;

[0033] (3) High-temperature heat treatment: the NiW / Y surface with the cured film atta...

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Abstract

The invention discloses a method for quickly preparing a GdBCO film through chemical solution deposition, which comprises the following steps of: 1, preparing GdBCO precursor solution; 2, uniformly coating the GdBCO precursor solution on a lanthanum aluminate monocrystal substrate or a NiW / Y2O3 / YSZ / CeO2 buffer layer; and 3, directly performing high temperature heat treatment, and cooling to obtain the GdBCO film. In the method, a one-step method replaces the traditional two-step method, the heat treatment frequency is reduced, the finished product ratio of samples and preparation efficiency are improved, and the method is favorable for continuously dynamically preparing GdBCO strips. The required device is simple and low in cost; and the preparation method is simple and practicable, and high-performance samples can be prepared.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting material preparation, and in particular relates to a method for rapidly preparing GdBCO thin films by chemical solution deposition. Background technique [0002] Coated conductor REBa 2 Cu 3 O y Has strong intrinsic pinning properties, especially GdBa 2 Cu 3 O y (GdBCO) has attracted increasing attention due to its high current density at high magnetic field. Researchers at ISTEC in Japan used physical deposition techniques to build 2 Zr 2 O 7 / PLD-CeO 2 High-performance GdBCO long strips were prepared on the buffer layer. Nagoya University in Japan successfully prepared LaAlO using trifluoroacetic acid metal organic deposition technology (TFA-MOD) 3 (100) / GdBCO film, its Jc obviously depends on the preparation process. Japan ISTEC used naphthenate as precursor and chemical solution deposition (CSD) to prepare high-performance GdBCO thin film. US ORNL at Ni3W / ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C20/08C04B35/45C04B35/64C04B35/624H01L39/24H10N60/01
Inventor 金利华李成山卢亚锋严武卫于泽铭
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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