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Preparation method of silicon-based nano-wire solar cell

A solar cell and silicon-based nanotechnology, applied in the manufacture of circuits, electrical components, and final products, can solve problems such as high surface recombination rate, poor electrode contact, and low efficiency of nanowire batteries

Active Publication Date: 2013-06-19
南通东湖国际商务服务有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the most studied is to form nanowires on silicon substrates by various methods, and then form a pn battery structure by diffusion; or use vapor phase chemical deposition method to prepare amorphous silicon thin films outside silicon nanowires to make pin battery structures. Although the radial p-n junction is beneficial to the collection of carriers and is theoretically expected to have higher conversion efficiency, the higher surface recombination rate and poor electrode contact cause the low efficiency of nanowire batteries.

Method used

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  • Preparation method of silicon-based nano-wire solar cell
  • Preparation method of silicon-based nano-wire solar cell

Examples

Experimental program
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example 1

[0037] 1. AZO / nano-silicon nip / Al 2 o 3 / AZO radial structure nanowire solar cell structure see figure 1 .

[0038] 2. Preparation of solar cells

[0039] 1. Preparation of AZO nanowire arrays:

[0040] (1) ITO glass substrate is selected, and the square resistance is 10 Ω;

[0041]Zinc acetate and citric acid were mixed at a molar ratio of 1:1, anhydrous ethanol was used as a solvent, and a 0.4 M ZnO transparent homogeneous sol was prepared by ultrasonic dissolution, which was aged for 2 days and coated on the substrate by spin coating. Annealing in the annealing furnace, annealing conditions: 350 o C, 10 min; repeat this process 10 times, then put it into the heating furnace, at 550 o C for 2 h to prepare a zinc oxide (ZnO) seed layer.

[0042] (2) Using zinc nitrate, aluminum nitrate, diethylenetriamine and water, ultrasonically dissolved to prepare a 0.004 M precursor solution, the molar ratio of Al and Zn in the precursor solution was 2.5%; soak the above substrate...

example 2

[0059] 1. AZO nanowire / nano-silicon nip / nano-silicon nip / Al 2 o 3 / AZO transparent upper electrode radial structure nanowire solar cell structure see figure 2 .

[0060] 2. Preparation of solar cells

[0061] 1. Preparation of AZO nanowire arrays:

[0062] Same as 1 in Example 1.

[0063] 2. Use PECVD to grow a 5nm thick n-type nano-silicon layer:

[0064] Same as 2 in Example 1.

[0065] 3. Use PECVD to grow a 20 nm thick intrinsic nano-silicon layer:

[0066] Growth conditions: silane with hydrogen dilution ratio of 95%, growth temperature 300°C, silane flow rate 10 sccm, hydrogen

[0067] Flow rate 100sccm, RF power 80W.

[0068] 4. Use PECVD to grow a p-type nano-silicon layer with a thickness of 5nm:

[0069] Same as 4 in Example 1.

[0070] 5. Using PECVD to grow n-type nano-silicon with a thickness of 5nm

[0071] Growth conditions: Silane at a hydrogen dilution ratio of 95%, the dilution ratio of borane [PH 3 ] / [PH 3 + H 2 ] is 0.5%, the g...

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Abstract

The invention relates to a preparation method of a silicon-based nano-wire solar cell, in particular to the nano-wire solar cell in the structure of zinc oxide / nano-silicon nip / aluminum oxide or zinc oxide / nano-silicon nip / nano-silicon nip / aluminum oxide, which is prepared by utilizing nano-silicon, aluminum oxide and zinc oxide nano-wires, and the preparation method belongs to the technical field of solar cell devices. The preparation method comprises the following steps: firstly growing aluminum-doped zinc oxide (AZO) nano-wires on a metal substrate or a transparent conductive film, furtherutilizing a PECVD (plasma enhanced chemical vapor deposition) method to prepare a nano-silicon layer on the AZO nano-wires, and forming the radial nano-wire solar cell in the nip structure or the nip-nip laminated structure rather than the p-n or pin radial structure which is adopted from inside to outside by the nano-wire cell reported at present; utilizing an atomic layer deposition (ALD) technology to prepare an aluminum oxide (Al2O3) passivation layer on the P type nano-silicon layer; and utilizing a atomic layer deposition technology to prepare the transparent conductive film so as to improve the electrode contact performance of the nano-wires. By adopting the preparation method, the conversion efficiency of the solar cell can be effectively improved.

Description

technical field [0001] The invention relates to a method for preparing a silicon-based nanowire solar cell, in particular to preparing zinc oxide / nano-silicon nip / alumina or zinc oxide / nano-silicon nip / nano-silicon nip / The invention relates to a nanowire solar cell with an alumina structure, belonging to the technical field of solar cell device preparation. Background technique [0002] Energy shortage and environmental damage have made clean energy solar cells receive great attention worldwide. Many governments and civil organizations have invested a lot of manpower and financial resources in the development and production of clean energy solar cells; The two tasks are to reduce costs and improve conversion efficiency. Improving the optical properties of cells through various anti-reflection coatings and silicon surface texturing technologies is an important way to improve the performance of solar cells; in addition, using various new nanostructures , in order to realize ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C16/44C23C16/40C23C16/42
CPCY02P70/521Y02P70/50
Inventor 丁建宁袁宁一
Owner 南通东湖国际商务服务有限公司
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