Metal nanocrystalline storage capacitor and preparation method thereof

A metal nanocrystal, storage capacitor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as difficult adjustment, reduce energy consumption and cost, achieve good uniformity, and achieve the effect of complete isolation

Inactive Publication Date: 2011-09-14
FUDAN UNIV
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Problems solved by technology

In addition, once the alloy target is successfully prepared, the work function of the alloy n

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  • Metal nanocrystalline storage capacitor and preparation method thereof
  • Metal nanocrystalline storage capacitor and preparation method thereof
  • Metal nanocrystalline storage capacitor and preparation method thereof

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[0036] Example 1

[0037] figure 2 It is a schematic diagram of the process of self-assembly of core@shell structure bimetallic nanocrystals on alumina medium. Among them, the aluminum oxide medium adopts the method of atomic layer deposition, and the thickness is 5-7 nanometers. The bimetallic nanocrystals of core@shell structure are prepared by one-step reduction method. image 3 It is a schematic cross-sectional view of the prepared double-layer metal nanocrystalline storage capacitor. The preparation process of the storage capacitor is as follows:

[0038] 1. After standard cleaning of p-type silicon wafers, Al layer with a thickness of 3~4 nanometers is deposited sequentially on the silicon wafers. 2 O 3 Medium and HfO with thickness of 1~2nm 2 Medium, this stack serves as a tunneling layer. Atomic layer deposition Al 2 O 3 The reaction precursor of the medium is trimethylaluminum (TMA) and water; the deposition temperature is controlled at 280-320 ℃. Atomic layer depositi...

Example Embodiment

[0045] Example 2

[0046] The bimetallic nanocrystalline sol solution was prepared by one-step reduction method: 1354 microliters of sodium tetrachloropalladate solution with a concentration of 0.05 mol / μl, 152 microliters of 0.05 mol / μl potassium chloroplatinate solution and 753 microliters The ethylenediaminetetraacetic acid (0.1 mol / μl) was added to 26 ml of water. The mixed solution was vigorously stirred for 40 minutes, and the system temperature was maintained at 60 ℃. Waiting for the mixed solution to cool to room temperature, add 6 ml of a mixture containing 0.05 mol of sodium carbonate and 18 mg of sodium borohydride dropwise, and the dosage is controlled at a rate of 0.3 ml per minute by a peristaltic pump. Continue to agitate for 2 hours at room temperature, then filter the suspension, rinse with a large amount of deionized water, and dry it overnight at 70°C in a vacuum environment. Figure 4 Is Pd prepared by this method 0.9 Pt 0.1 TEM image of bimetallic nanocrysta...

Example Embodiment

[0047] Example 3

[0048] Seed-mediated epitaxial growth method to prepare tri-metal nanocrystalline sol solution: dropwise add 6 ml of 10 mmol sodium borohydride solution to 44 ml of silver nitrate (1.0 mmol) and sodium citrate (1.0 mmol) In solution. Stir vigorously at 0°C for three hours to obtain a silver sol with a size of 7 nm.

[0049] A solution of sodium tetrachloropalladate and potassium chloroplatinate with a total ion content of 0.04 mmol is dissolved in 20 ml of water and then sonicated for 60 minutes. Heat the mixed solution to boiling. After boiling for 10 minutes, add 30 ml of the previously configured silver sol dropwise. Continue to stir under heating for 2 hours, filter out the suspension, rinse with plenty of hot water, and dry it overnight at 70°C in a vacuum environment. Figure 5 It is a TEM picture of the obtained hollow ternary metal nanocrystals. It can be seen that the diameter of the hollow is about 3 nm, and the diameter of the shell is about 6 nm. ...

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Abstract

The invention belongs to the technical field of semiconductor storage manufacturing, namely a method for preparing a metal nanocrystalline storage capacitor. By the method, a metal nanocrystalline with an adjustable work function can be directly obtained on the surface of Al2O3, HfO2, La2O3 and Nb2O5 films deposited on an atomic layer, or a laminated combination of the Al2O3, HfO2, La2O3 and Nb2O5 films or a multi-element mixed thin film surface at room temperature. By the method, one layer or multiple layers of nanocrystalline can be embedded in the medium film; the layers are completely isolated through the medium film; and the size and distribution of each layer of nanocrystalline are not affected in the subsequent medium film depositing process substantially.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and in particular relates to a metal nanocrystal storage capacitor and a preparation method thereof. technical background [0002] With the widespread application of polysilicon floating gate memory in the fields of communication, consumption, and computer, it has become a memory chip product occupying a certain market share. However, the deepening of the scaling down requirements of the semiconductor industry poses a great challenge to the preparation of high-quality nanometer-thick tunnel oxide layers. Nanocrystalline memory solves the dilemma encountered by traditional polysilicon floating gate memory in the case of further shrinking in size - the thinning of the tunnel oxide layer and the degradation of data retention. The advantage of nanocrystal memory is that its charge is stored in discrete nanocrystals, and the nanocrystals are completely isolated by insulating media. Ther...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/8238H01L29/92
Inventor 黄玥
Owner FUDAN UNIV
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