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Preparation method for carbon nanotube or graphene nano-carbon material

A carbon nanomaterial and carbon nanotube technology, which is applied in the field of metal-free catalytic preparation of carbon nanotubes or graphene nanocarbon materials, can solve the problems of small graphene size, difficult product transfer, uneven distribution, etc., and achieves easy operation, The effect of strong controllability and simple process

Inactive Publication Date: 2011-09-21
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

The mechanical exfoliation method is simple to operate but poor in controllability; the solution phase preparation system is simple to operate and has a large output, but the graphene size is small and unevenly distributed; chemical vapor deposition can prepare high-quality graphene, but the process is complicated, the efficiency is low, and the product transfer difficulty

Method used

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  • Preparation method for carbon nanotube or graphene nano-carbon material
  • Preparation method for carbon nanotube or graphene nano-carbon material
  • Preparation method for carbon nanotube or graphene nano-carbon material

Examples

Experimental program
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Effect test

Embodiment 1

[0034]First, clean the surface of 6H-SiC(000-1), soak in 20% hydrofluoric acid solution for 5 minutes to remove surface oxides, then rinse with deionized water, ethanol, and acetone in order to remove residual hydrogen fluoride on the surface acids and organics. After being placed in a vacuum chamber, it is heated to about 650°C to degas for several hours.

Embodiment 2

[0036] After cleaning and degassing, the 6H-SiC samples were vacuum-conditioned (3.0×10 -10 mbar) was heated to 1700°C under direct current and kept for 60 minutes. At this time, the color of the sample changed from light green to black, forming a surface carbon layer structure with a thickness of several microns.

[0037] figure 1 SEM cross-sectional view of the graphene material prepared for this example. The interface between the surface carbon layer and the silicon carbide substrate can be clearly distinguished from the bottom of the figure. The surface carbon layer structure is about 2.4 μm thick and consists of vertical graphene structures.

[0038] figure 2 A transmission electron microscope image of graphene.

Embodiment 3

[0040] After the 6H-SiC sample was cleaned and degassed, argon gas was introduced into the vacuum chamber through the control leak valve, and the vacuum was maintained at 1.3×10 -5 mbar. The sample was then heated to 1700°C in direct current for 60 minutes. The sample turned from light green to black. The surface is a graphene array structure with a thickness of about 1 μm.

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Abstract

The invention discloses a novel preparation method for nano-carbon material without metal catalyst. The method is a silicon carbide high temperature thermal decomposition method, wherein the high-efficiency and controllable preparation of carbon nanotube and graphene nano-carbon material is realized through modulating the atmosphere in the preparation process. According to the method, high purity nano-carbon material without metal catalyst is produced, thus the influence of metal on the physicochemical property of nano-carbon material is overcome fundamentally. The method is a simple high-efficiency novel method with good repeatability for producing nano-carbon material.

Description

technical field [0001] The invention relates to a method for preparing carbon nanotube or graphene nano carbon material by metal-free catalysis. Background technique [0002] Since the discovery of carbon nanotubes, due to their unique electronic structure and physical and chemical properties, they have shown broad application prospects in many fields such as microelectronics, field emission devices, hydrogen storage, and catalysis. The preparation of high-purity and high-yield carbon nanotubes is the premise and basis for their structural characterization, performance testing and further application research. At present, the commonly used carbon nanotube preparation methods mainly include: arc discharge method, laser evaporation method and metal-catalyzed chemical vapor deposition method. Among them, the arc discharge method has simple technology and fast growth rate, but requires high temperature and more impurities in the product; the product prepared by laser evaporatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B31/02
Inventor 包信和王珍傅强
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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