Gradient hydrogen process grown ZnO-TCO thin film with textured structure and use thereof

A hydrogen and textured technology, which is applied in the field of growing textured ZnO-TCO films by the gradient hydrogen method, can solve the problems of film grain size reduction, film compressive stress increase, film resistivity increase, etc., to improve efficiency and The effects of stability, good electrical characteristics, and good transmittance

Inactive Publication Date: 2011-09-28
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with H 2 The /Ar flow ratio increases, the resistivity of the film increases, and the electron mobility

Method used

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  • Gradient hydrogen process grown ZnO-TCO thin film with textured structure and use thereof
  • Gradient hydrogen process grown ZnO-TCO thin film with textured structure and use thereof
  • Gradient hydrogen process grown ZnO-TCO thin film with textured structure and use thereof

Examples

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Example Embodiment

[0024] Example 1:

[0025] 1. Using magnetron sputtering technology, ZnO:Ga with a purity of 99.995% 2 o 3 The ceramic target is used as the target material, and the dopant component Ga in the ceramic target 2 o 3 The weight percentage is 1.0%, the sputtering gas is Ar gas, and the textured structure ZnO-TCO film is grown on the glass substrate, the substrate temperature is 125 ℃, and the background vacuum is 8×10 -5 Pa, the sputtering pressure is 4.3mTorr, and the sputtering power density is 1.0W / cm 2 , film thickness is 1200nm. The film structure is: glass / Ga-doped ZnO-TCO film grown under the condition of "lower hydrogen flow + normal hydrogen flow" with gradient hydrogen flow rate. cycle, the normal hydrogen flow rate of 6.0sccm is 15 cycles.

[0026] figure 2 It is a schematic diagram of the structure of the textured ZnO thin film, and figure 1 Compared with the textured ZnO film structure obtained under the normal hydrogen flow rate, the film obtained by the gra...

Example Embodiment

[0028] Example 2:

[0029] Using magnetron sputtering technology, ZnO:Al with a purity of 99.995% 2 o 3 The ceramic target is used as the target raw material, and the dopant component Al in the ceramic target 2 o 3 The weight percentage is 1.0%, the sputtering gas is Ar gas, and the ZnO-TCO thin film is grown on the glass substrate, the substrate temperature is 250 ℃, and the background vacuum is 8×10 -5 Pa, the sputtering pressure is 4.0mTorr, and the sputtering power density is 0.8W / cm 2 , film thickness is 1500nm. The film structure is: Al-doped textured ZnO-TCO film grown under the condition of glass / gradient hydrogen flow rate as "lower hydrogen flow + normal hydrogen flow", and the total number of coating times is 20 cycles, of which the lower hydrogen flow 1 sccm is 5 cycles, normal oxygen flow 4.5 sccm is 15 cycles.

[0030] 2. Apply the above textured ZnO-TCO thin film to pin type a-Si thin film solar cells. like image 3 As shown, the textured ZnO film is pla...

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Abstract

The invention discloses a gradient hydrogen process grown ZnO-TCO thin film with a textured structure, which is prepared by using a glass substrate as a substrate, ZnO:Ga2O3 or ZnO:Al2O3 as a target material and Ar as a sputtering gas, introducing hydrogen in a sputtering process and varying the flow of the hydrogen in a gradient manner in a sputtering coating period and by a magneto-controlled sputter coating technique. The gradient hydrogen process grown ZnO-TCO thin film has the advantages that: compared with ZnO-TCO thin film with the textured structure, which is obtained by using the magneto-controlled sputter coating technique with normal hydrogen flow, the ZnO-TCO thin film with the textured structure, which is grown gradient hydrogen flow process, has higher transmissivity and better electrochemical property, and the textured structure of the thin film is improved obviously; and when the thin film is used in a microcrystalline silicon thin film cell or noncrystalline silicon cell/microcrystalline silicon tandem thin film solar cell, the light scattering effect is improved, the incident light path is increased, the thickness of an active layer is lowered effectively, and the efficiency and stability of a Si-based thin-film solar cell are improved.

Description

【Technical field】 [0001] The invention belongs to the field of thin-film solar cells, in particular to a ZnO-TCO film with a textured structure grown by a gradient hydrogen method and its application. 【Background technique】 [0002] Transparent conductive oxide (TCO) thin film material is an important part of thin film solar cells, see literature: A.V.Shah, H.Schade, M.Vanecek, et al.Progress in Photovoltaics 12(2004) 113-142, J. Müller, B. Rech, J. Springer, et al. Solar Energy 77 (2004) 917-930. The most widely used TCO film in thin film batteries is F-doped SnO 2 thin film (SnO 2 :F) and Sn-doped In 2 o 3 Film (In 2 o 3 :Sn). F-doped SnO 2 Thin films are usually prepared by atmospheric pressure CVD (APCVD) technology, and the growth temperature is high (~500°C), which will limit the further application of battery materials grown in low temperature deposition and strong H plasma environment, see literature: S. Major, S. Kumar, M. Bhatnagar, et al. Applied Physics ...

Claims

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Application Information

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IPC IPC(8): C23C14/54C23C14/08C23C14/35H01L31/0224
Inventor 陈新亮耿新华王斐张德坤魏长春黄茜张建军张晓丹赵颖
Owner NANKAI UNIV
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