Water and oil repellency surface microstructure and manufacturing method thereof

A hydrophobic, oleophobic and microstructure technology, which is applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of poor performance repeatability, irregular micro-nano structure, poor uniformity, etc., and achieve flow resistance reduction, The effect of simple chemical treatment and high mechanical stability

Inactive Publication Date: 2012-04-25
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, liquids with low surface tension such as oils, organic solvents, etc. (the surface tension is usually only 1/3 of that of water) will generally spread quickly on this super-hydrophobic surface, so that the oleophobic effect of more than 90 degrees cannot be obtained.
Most of the oleophobic surfaces reported so far are irregular structures developed by nanotechnology, which cannot precisely control the micro-nano features. This structure has poor performance repeatability, poor

Method used

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  • Water and oil repellency surface microstructure and manufacturing method thereof
  • Water and oil repellency surface microstructure and manufacturing method thereof
  • Water and oil repellency surface microstructure and manufacturing method thereof

Examples

Experimental program
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Example Embodiment

[0035] Example 1

[0036] Such as figure 1 As shown, a hydrophobic and oleophobic surface microstructure includes a substrate and a T-shaped micro-nano structure etched on the substrate. The T-shaped micro-nano structure includes a vertical portion 1 and a horizontal portion 2, and the horizontal portion 2 is provided on the vertical portion 1 The top end, and the horizontal part 2 is aligned with the center of the vertical part 1. The horizontal part 2 and the vertical part 1 have a sufficiently strong bonding force to maintain stable mechanical strength. The cross-sectional area of ​​the horizontal portion 2 is larger than the cross-sectional area of ​​the vertical portion 1, and the diameter of the horizontal portion 2 is less than 50um. The T-shaped micro / nano structures are arranged in an array, and the distance between adjacent T-shaped micro / nano structures is not more than 15 times the diameter of the transverse portion 2.

[0037] Such as figure 2 with 3 As shown, the T...

Example Embodiment

[0039] Example 2

[0040] This embodiment is the same as Embodiment 1 except for the following features:

[0041] Such as Figure 5 The process steps shown are as follows: First, use substrate cleaning and mask pattern transfer process to treat the surface with SiO with a thermal growth thickness of 100nm-200nm 2 Thin film silicon substrate; then, use CF 4 Or CHF 3 Gas plasma etching and etching SiO with photoresist as a mask 2 Film until the silicon surface is exposed; then, use a glue removal solution or acetone to wash off the photoresist, and pass through O 2 Plasma cleaning; furthermore, use XeF 2 The silicon surface is treated by a vapor etching process; finally, a CVD chemical vapor deposition process is used to treat the silicon surface by XeF 2 The silicon surface treated by the vapor-phase etching process, such as Picture 9 Hydrophobic and oleophobic surface microstructure shown.

Example Embodiment

[0042] Example 3

[0043] This embodiment is the same as Embodiment 1 except for the following features:

[0044] Such as Image 6 The process steps shown are as follows: First, use substrate cleaning and mask pattern transfer process to treat the surface with SiO with a thermal growth thickness of 100nm-200nm 2 Thin film silicon substrate; then, use CF 4 Or CHF 3 Gas plasma etching and etching SiO with photoresist as a mask 2 Film until the silicon surface is exposed; then, use a glue removal solution or acetone to wash off the photoresist, and pass through O 2 Plasma cleaning; in addition, the silicon surface is treated by DRIE etching process; finally, the silicon surface treated by DRIE etching process is treated by CVD chemical vapor deposition process to obtain Picture 10 Hydrophobic and oleophobic surface microstructure shown.

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Abstract

The invention discloses a water and oil repellency surface microstructure which comprises a substrate and a T type micro-nanometer structure etched on the substrate, wherein the T type micro-nanometer structure comprises a vertical part and a transverse part which is arranged at the top end of the vertical part. A manufacturing technology of a water and oil repellency surface comprises the steps of substrate cleaning, mask pattern transfer, XeF2 gaseous phase etching process or DRIE (Deep Reactive Ion Etching) etching process, chemical vapor deposition or perfluorination silane monomer self-assembly, thereby the water and oil repellency surface microstructure with high mechanical stability, good technology repeatability and controlled geometric structure is obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing technology, in particular to a hydrophobic and oleophobic surface micro-nano structure and a preparation method thereof. Background technique [0002] In the past 30 years, by simulating the natural micro-nano structures such as lotus leaves and water spiders, people have successfully developed many superhydrophobic materials with contact angles exceeding 150 degrees and easy sliding by using micro-electromechanical systems (MEMS) technology and nanotechnology. The superhydrophobic material can not only reduce the pollution and flow resistance of water and other high surface energy solutions, but also achieve self-cleaning effect. The structure of superhydrophobic materials is usually regular micro-pillars or undesigned micro-nanospheres, micro-nanofibers, pores, etc. that are difficult to precisely control. However, liquids with low surface tension such as oils, organic solvents...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/306H01L21/3065B81B1/00B81C1/00
Inventor 吴天准袁丽芳祝渊桂许春项荣汤子康铃木雄二
Owner SUN YAT SEN UNIV
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