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Preparation method of monocrystalline silicon surface aminosilane-samarium sulfide film

A technology of aminosilane and samarium sulfide, which is applied in the field of preparation of samarium sulfide thin films, can solve the problems of inability to prepare high-performance thin films, high cost of samarium sulfide thin films, complicated preparation process, etc. low cost effect

Active Publication Date: 2013-04-10
永耀实业(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These preparation processes are relatively mature, but the equipment required is special and expensive; factors such as complex preparation processes and harsh conditions make the cost of preparing samarium sulfide thin films too high, and it is impossible to prepare thin films with good performance simply and quickly

Method used

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  • Preparation method of monocrystalline silicon surface aminosilane-samarium sulfide film
  • Preparation method of monocrystalline silicon surface aminosilane-samarium sulfide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1) Take 0.1ml of tetrahydrofuran solution of samarium diiodide with a concentration of 0.1mol / L in a beaker, then add 20mL of tetrahydrofuran into the beaker and stir to obtain solution A;

[0019] 2) Add 0.1 g of EDTA (ethylenediaminetetraacetic acid) to solution A, and magnetically stir at room temperature to obtain solution B;

[0020] 3) Add 0.05g analytically pure thiourea (CH 4 N 2 S) stir to obtain solution C;

[0021] 4) adjust the pH value of solution C to 2.5 with ammonia water to obtain precursor solution D;

[0022] 5) Soak the silicon substrate in aqua regia, use ultrasonic vibration for 60 minutes, cool it naturally at room temperature, and then wash it repeatedly with deionized water. 2 Blow dry, and then irradiate for 30 minutes in an ultraviolet irradiator to obtain a hydroxylated silicon substrate;

[0023] The hydroxylated silicon substrate was placed in an anhydrous methanol solution of APTS (3-aminopropylmethyltriethoxysilane) with a volume conc...

Embodiment 2

[0028] 1) Take 0.5ml of a tetrahydrofuran solution of samarium diiodide with a concentration of 0.1mol / L and place it in a beaker, then add 10mL of tetrahydrofuran to the beaker and stir evenly to obtain solution A;

[0029] 2) Add 0.5 g of EDTA (ethylenediaminetetraacetic acid) to solution A, and stir magnetically at room temperature to obtain solution B;

[0030] 3) Add 0.01g analytically pure thiourea (CH 4 N 2 S) stir to obtain solution C;

[0031] 4) adjust the pH value of solution C to 3 with ammonia water to obtain precursor solution D;

[0032] 5) Soak the silicon substrate in aqua regia, use ultrasonic vibration for 30 minutes, cool it naturally at room temperature, and then wash it repeatedly with deionized water. 2 Blow dry, and then irradiate for 50 minutes in an ultraviolet irradiator to obtain a hydroxylated silicon substrate;

[0033] Put the hydroxylated silicon substrate in an anhydrous methanol solution with a volume concentration of 0.8% APTS (3-aminopro...

Embodiment 3

[0037] 1) Take 3.0ml of tetrahydrofuran solution of samarium diiodide with a concentration of 0.1mol / L in a beaker, then add 40mL of tetrahydrofuran into the beaker and stir to obtain solution A;

[0038] 2) Add 0.8 g of EDTA (ethylenediaminetetraacetic acid) to solution A, and stir magnetically at room temperature to obtain solution B;

[0039] 3) Add 0.8g analytically pure thiourea (CH 4 N 2 S) stir to obtain solution C;

[0040] 4) adjust the pH value of solution C to 3.5 with ammonia water to obtain precursor solution D;

[0041] 5) Soak the silicon substrate in aqua regia, use ultrasonic vibration for 120 minutes, cool it naturally at room temperature, and then wash it repeatedly with deionized water, and wash it with N 2 Blow dry, and then irradiate for 40 minutes in an ultraviolet irradiator to obtain a hydroxylated silicon substrate;

[0042] The hydroxylated silicon substrate was placed in an anhydrous methanol solution of APTS (3-aminopropylmethyltriethoxysilane)...

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Abstract

The invention relates to a preparation method of a monocrystalline silicon surface aminosilane-samarium sulfide film. The preparation method comprises the following steps that: ethylene diamine tetraacetic acid (EDTA) is added into tetrahydrofuran solution of samarium diiodide to obtain solution B; thiourea is added into the solution B to obtain solution C; the pH value of the solution C is regulated to 2.5 to 4.5 by ammonia water to obtain precursor liquid D; and the precursor liquid D is placed into a beaker, then, a functionalized silicon base plate is placed into the precursor liquid D, the beaker is placed into a vacuum drying utensil, the vacuum pumping is carried, then, the vacuum drying utensil is placed into a drying box for deposition to prepare the samarium sulfide film, and the prepared film is placed into the vacuum drying box to be dried for obtaining a samarium sulfide nanometer film. Because a liquid phase self assembly method is adopted, the prepared samarium sulfide nanometer film is uniform and compact and has low defects and high intensity, and in addition, the film thickness and the crystal grain dimension can be controlled through controlling the concentration of the precursor liquid, the pH value and the deposition time. The samarium sulfide nanometer film prepared by the method has high repeatability, and the large-area film preparation is easy to realize. In addition, the operation is convenient, raw materials are easy to obtain, and the preparation cost is lower.

Description

technical field [0001] The invention relates to a preparation method of a samarium sulfide film, in particular to a preparation method of an aminosilane-samarium sulfide film on the surface of single crystal silicon. It is a preparation method capable of preparing a uniform, dense, low-defect, high-strength nano-film that does not require post-crystallization treatment. Background technique [0002] The SmS crystal has a cubic structure and is a piezochromic material. It is a black semiconductor (S-SmS) at room temperature and pressure, and its lattice parameter is 0.597nm, at 6.5×10 8 Under a static pressure of Pa, SmS crystals undergo a phase transition from a semiconducting phase to a metallic phase (M-SmS). The lattice constant decreases from 0.597nm to about 0.570nm; moreover, the crystal color will change from black to golden yellow, and the volume shrinkage will be about 16% [Jayaraman A, Narayanamurti V, Bucher E etal. Continuous and Discontinuous Semiconductor-met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/00
Inventor 黄剑锋侯艳超刘佳曹丽云吴建鹏殷立雄
Owner 永耀实业(深圳)有限公司
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