Ultraviolet detector based on titanium dioxide/strontium titanate heterojunction and preparation method

A technology of heterojunction and ultraviolet light, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of low responsivity of ultraviolet detectors, and achieve the goal of being suitable for mass production, easy integration, and preparation The effect of simple method

Inactive Publication Date: 2012-06-20
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a kind of perovskite material, SrTiO 3 The physical and chemical properties are stable, and it shows excellent photoelectric properties in the visible blind area, so it is u

Method used

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  • Ultraviolet detector based on titanium dioxide/strontium titanate heterojunction and preparation method
  • Ultraviolet detector based on titanium dioxide/strontium titanate heterojunction and preparation method
  • Ultraviolet detector based on titanium dioxide/strontium titanate heterojunction and preparation method

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Experimental program
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Effect test

Embodiment 1

[0035] Preparation of TiO by Sol-Gel Technology 2 thin film, add 10mL tetrabutyl titanate to 100mL absolute ethanol at room temperature, then add 10mL glacial acetic acid dropwise as a catalyst, after 60 minutes of stirring, a uniform and transparent light yellow solution is obtained; slowly add 10mL acetylacetone to inhibit Hydrolysis, the color of the solution becomes darker, continue to stir for 1 hour; finally, slowly add 10mL of deionized water to the above solution dropwise at a rate of 1mL / min, continue to stir for 2 hours, and obtain a uniform and transparent light yellow sol, which is left to age 6 hours.

[0036] Preparation of SrTiO by Sol-Gel Technology 3 Nano-film, dissolve 0.25g strontium acetate in 5mL acetic acid at room temperature, stir evenly, add dropwise 0.4mL tetrabutyl titanate, stir for 30 minutes to obtain a white uniform solution, and finally add 10mL ethanol as a solvent to the above solution, Stirring was continued for 1 hour to obtain a uniform a...

Embodiment 2

[0042] Preparation of TiO by Sol-Gel Technology 2 thin film, add 10mL tetrabutyl titanate to 100mL absolute ethanol at room temperature, then add 10mL glacial acetic acid dropwise as a catalyst, after 60 minutes of stirring, a uniform and transparent light yellow solution is obtained; slowly add 10mL acetylacetone to inhibit Hydrolysis, the color of the solution becomes darker, continue to stir for 1 hour; finally, slowly add 10mL of deionized water to the above solution dropwise at a rate of 1mL / min, continue to stir for 2 hours, and obtain a uniform and transparent light yellow sol, which is left to age 6 hours.

[0043] Preparation of SrTiO by Sol-Gel Technology 3 Nano-film, dissolve 0.25g strontium acetate in 5mL acetic acid at room temperature, stir evenly, add dropwise 0.4mL tetrabutyl titanate, stir for 30 minutes to obtain a white uniform solution, and finally add 10mL ethanol as a solvent to the above solution, Stirring was continued for 1 hour to obtain a uniform a...

Embodiment 3

[0049] Preparation of TiO by Sol-Gel Technology 2 thin film, add 10mL tetrabutyl titanate to 100mL absolute ethanol at room temperature, then add 10mL glacial acetic acid dropwise as a catalyst, after 60 minutes of stirring, a uniform and transparent light yellow solution is obtained; slowly add 10mL acetylacetone to inhibit Hydrolysis, the color of the solution becomes darker, continue to stir for 1 hour; finally, slowly add 10mL of deionized water to the above solution dropwise at a rate of 1mL / min, continue to stir for 2 hours, and obtain a uniform and transparent light yellow sol, which is left to age 6 hours.

[0050] Preparation of SrTiO by Sol-Gel Technology 3 Nano-film, dissolve 0.25g strontium acetate in 5mL acetic acid at room temperature, stir evenly, add dropwise 0.4mL tetrabutyl titanate, stir for 30 minutes to obtain a white uniform solution, and finally add 10mL ethanol as a solvent to the above solution, Stirring was continued for 1 hour to obtain a uniform a...

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Abstract

The invention particularly relates to a high-performance semiconductor ultraviolet photoelectric detector and a preparation method thereof, wherein for the high-performance semiconductor ultraviolet photoelectric detector, an ultra-thin silicon chip is used as a substrate, a nano TiO2/SrTiO3 heterojunction active layer is used as a base material, and Au is used as a metal interdigitated electrode. The preparation method comprises the following steps of: preparing a TiO2 and SrTiO3 sol by adopting a sol-gel technology, and growing a compact nano SrTiO3 film and a compact TiO2 film in order on the ultra-thin silicon substrate; and preparing the Au interdigitated electrode with a certain shape on the surface of the films through adoption of a magnetron sputtering technology and a standard photoetching and stripping technology. The TiO2/SrTiO3 heterojunction metal-semiconductor-metal ultraviolet detector prepared with the preparation method disclosed by the invention has the characteristics of simple preparation method, low cost and potentiality in large-scale production, and has a good detection performance for detecting ultraviolet rays of which the wavelength is 250-350 nm.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and in particular relates to an ultra-thin silicon wafer as a substrate and nano-TiO 2 / SrTiO 3 A (titanium dioxide / strontium titanate) heterojunction active layer is used as a base material, and a high-performance ultraviolet light detector with Au as a metal finger electrode and a preparation method thereof. Background technique [0002] Due to the advantages of small size, high efficiency, low cost, and low power consumption, wide-bandgap semiconductor-based ultraviolet light detectors have important application value in military, civil, aerospace, environmental protection, fire prevention and other fields. One of the research hotspots. [0003] There are many semiconductor materials used in ultraviolet light detectors, and currently they are mainly concentrated in materials such as SiC, ZnO and GaN. However, the preparation of ultraviolet photodetectors with the above ma...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0224H01L31/18
CPCY02P70/50
Inventor 阮圣平张敏刘彩霞张海峰沈亮周敬然董玮郭文滨张歆东徐鹏陈维友
Owner JILIN UNIV
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