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Chemical vapor deposition device

A chemical vapor deposition and susceptor technology, which is applied in gaseous chemical plating, electrical components, climate sustainability, etc., can solve the problem of damage to process quality, uneven heating of glass substrates, and damage to the contact tightness between heating susceptors and glass substrates and other problems to achieve the effect of reducing maintenance costs, cleaning and replacement frequency

Inactive Publication Date: 2012-07-04
理想耀锐(浙江)能源科技有限公司
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing chemical vapor deposition devices have the following problems: whether it is radiation heating or heat transfer heating, the heating base will emit radiant energy when heating the glass substrate, resulting in thermal radiation
During the use of the chemical vapor deposition device, with the rotation of the conveying roller, the change of thermal conditions and the increase of the thickness of the film on the surface of the conveying roller, the zinc oxide film on the surface of the conveying roller will eventually peel off, and the zinc oxide film falling below it On the heating base, it will destroy the contact tightness between the heating base and the glass substrate, or directly affect the heating effect of the heating base, which will eventually cause uneven heating of the glass substrate and damage the process quality

Method used

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Embodiment Construction

[0021] In the existing chemical vapor deposition device, no matter whether radiation heating or heat transfer heating is used, the heating base will generate heat radiation when it is working, and the heat radiation will easily heat the transfer roller located above it, so that the reaction gas will flow on the transfer roller. The surface reacts and deposits to form a thin film.

[0022] In the present invention, the transmission structure is made of materials with high transmittance or reflectivity to the above-mentioned thermal radiation, and the absorption rate of the transmission structure to the thermal radiation is reduced, so that the transmission structure is not easy to absorb the thermal radiation and heat up. Destroy the temperature condition for the reaction gas to react and form a film on the surface of the transmission structure.

[0023] figure 1 It is the device schematic diagram of the chemical vapor deposition device of the present invention. like figure ...

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Abstract

The invention provides a chemical vapor deposition device, which comprises a reaction chamber, a heating substrate arranged in the reaction chamber and used for heating a workpiece to be machined, and a transmission structure arranged above the heating substrate and used for transmitting the workpiece to be machined, wherein the heating substrate generates heat radiation in the process of machining the workpiece to be machined; and the transmission structure transmits or reflects the heat radiation projected to the transmission structure. By the chemical vapor deposition device, the transmission structure can be prevented from being heated by the heat radiation generated by the heating substrate to avoid raising temperature, so that a temperature condition that a reaction gas is reacted on the surface of the transmission structure to form a film is broken, the cleaning and replacement frequency of the transmission structure is greatly reduced, and the maintenance cost of equipment is reduced.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing equipment, in particular to a chemical vapor deposition device for manufacturing thin-film solar cells. Background technique [0002] Among many solar cell application technologies, thin-film solar cells are widely used in aviation, aerospace and people's daily life due to a series of advantages such as no pollution, less energy consumption, low cost, and mass production. Common thin film solar cells include: amorphous silicon thin film solar cells, copper indium gallium selenide thin film cells and cadmium telluride thin film cells. In the Chinese invention patent documents with publication numbers 101027749 and 101226967, more methods for forming solar thin film cells mentioned above can be found. [0003] In the manufacture of thin-film solar cells, the deposition of transparent conductive oxide thin films is an important process link, and the transparent conductive oxide thin films are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/46C23C16/458H01L31/20
CPCY02P70/50
Inventor 汪宇澄李一成陶成钢赵函一李冠龙
Owner 理想耀锐(浙江)能源科技有限公司
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