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Manufacture method of uniaxial strain silicon germanium on insulator (SGOI) wafer on aluminum nitride (AIN) embedded insulating barrier based on mechanical bending table

A technology of uniaxial strain and manufacturing method, which is applied in the field of microelectronics, can solve the problems of silicon wafers being easily broken, complex process steps, and long production cycle, and achieve the effects of low production cost, simple production process, and high yield

Inactive Publication Date: 2012-07-04
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The main disadvantages of this technology are: 1) the process steps are complex: the method must undergo thermal oxidation, H + Ion implantation, stripping annealing and other essential processes and related steps
3) Long production cycle: additional thermal oxidation, H + Process steps such as ion implantation and stripping annealing increase the time of its fabrication
4) Low yield: This method is to use two overlapping silicon wafers for mechanical bending and bonding, and to perform high-temperature peeling in the bent state, and the silicon wafers are easily broken

Method used

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  • Manufacture method of uniaxial strain silicon germanium on insulator (SGOI) wafer on aluminum nitride (AIN) embedded insulating barrier based on mechanical bending table
  • Manufacture method of uniaxial strain silicon germanium on insulator (SGOI) wafer on aluminum nitride (AIN) embedded insulating barrier based on mechanical bending table
  • Manufacture method of uniaxial strain silicon germanium on insulator (SGOI) wafer on aluminum nitride (AIN) embedded insulating barrier based on mechanical bending table

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: Preparation of 4-inch uniaxially strained SGOI wafer

[0036] 1. SGOI wafer selection: 4-inch (100) or (110) wafer ((100) or (110) refers to a certain crystal surface of the SGOI wafer crystal surface), Si substrate thickness 0.4mm, The AlN buried insulating layer is 500nm thick, and the top SiGe layer is 500nm thick.

[0037] SGOI wafer diameter selection: the larger the diameter of the SGOI wafer, the smaller the minimum bending radius of its bending, the greater the strain of the obtained uniaxially strained SGOI wafer, and the final electron migration of the uniaxially strained SGOI wafer The enhancement of rate and hole mobility is also higher. For the uniaxially strained SGOI wafer based on the AlN buried insulating layer produced in the present invention, SGOI wafers with different diameters from 4 inches to 12 inches can be selected according to the different processes of the SGOI device and circuit.

[0038] SGOI wafer crystal plane and crystal ...

Embodiment 2

[0056] Embodiment 2: Preparation of 5-inch uniaxially strained SGOI wafer

[0057] 1. SGOI wafer selection: 5-inch (100) or (110) crystal plane, Si substrate thickness 0.55mm, AlN buried insulating layer thickness 300nm, top layer SiGe thickness 50nm.

[0058] 2. Selection of bending radius of curvature: According to the selected SGOI wafer, the radius of curvature of the bending table is selected to be 0.75m.

[0059] 3. SGOI wafer bending process steps:

[0060] 1) Place the top SiGe layer of the SGOI wafer upwards (or downwards) on a clean stainless steel arc-shaped bending table, and its or direction is parallel to the bending direction, such as image 3 or Figure 4 shown;

[0061] 2) Two cylindrical horizontal pressure bars on the bending table are placed horizontally at both ends of the SGOI wafer, 1 cm away from its edge;

[0062] 3) Rotate the ejector nut of one of the pressure rods on the bending table to fix one end of the SGOI wafer first;

[0063] 4) Slowly...

Embodiment 3

[0071] Embodiment 3: Preparation of 8-inch uniaxially strained SGOI wafer

[0072] 1. SGOI wafer selection: 8-inch (100) or (110) crystal plane, Si substrate thickness 0.68mm, AlN buried insulating layer thickness 1000nm, top layer SiGe thickness 1000nm.

[0073] 2. Selection of bending radius of curvature: According to the selected SGOI wafer, the radius of curvature of the bending table is selected to be 0.5m.

[0074] 3. SGOI wafer bending process steps:

[0075] 1) Place the SiGe layer on the top layer of the SGOI wafer upwards (or downwards) on the arc-shaped bending table, and its bending direction is parallel to the or direction, such as image 3 or Figure 4 shown;

[0076] 2) Two cylindrical horizontal pressure bars on the bending table are placed horizontally at both ends of the SGOI wafer, 1 cm away from its edge;

[0077] 3) Rotate the ejector nut of one of the pressure rods on the bending table to fix one end of the SGOI wafer first;

[0078]4) Slowly turn ...

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Abstract

The invention discloses a manufacture method of a uniaxial strain silicon germanium on insulator (SGOI) wafer on an aluminum nitride (AIN) embedded insulating barrier based on a mechanical bending table, which comprises the steps as follows, (1) a top layer silicon-germanium (SiGe) layer face of the SGOI wafer is upwards or downwards placed on the mechanical bending table; (2) two cylindrical stainless steel compression bars are respectively and horizontally placed at two ends of the SGOI wafer and 1cm away from the edge of the SGOI wafer; (3) a nut connected with the compression bars is slowly rotated to enable the SGOI wafer to bend gradually along an arc-shaped table face until the SGOI wafer is completely fitted with the arc-shaped table face; (4) the arc-shaped bending table loaded with the SGOI wafer is placed in an annealing furnace for annealing; (5) the temperature is reduced to the room temperature after completion of annealing, and the arc-shaped bending table loaded with the SGOI wafer is taken out; and (6) the nut connected with the compression bars is rotated to slowly life the compression bars until bending SGOI wafer is reinstated. The manufacture method has the following advantages of being (1) low in manufacture cost, (2) simple in manufacture equipment and process, (3) high in strain effect, (4) excellent in insulativity and thermal property, (5) high in rate of finished products, and (6) large in annealing temperature range.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor material manufacturing technology. Specifically, it is a new method of manufacturing uniaxially strained SGOI (Silicon Germanium On Insulator, silicon germanium on insulating layer) wafers based on AlN (aluminum nitride) buried insulating layer, which can be used to make ultra-high-speed, low-power, SGOI wafers required for radiation-resistant semiconductor devices and integrated circuits can significantly enhance the electron mobility and hole mobility of SGOI wafers, and improve the electrical performance of SGOI devices and circuits. Background technique [0002] Strained SiGe (silicon germanium) has many advantages such as high operating frequency of devices and circuits, low power consumption, cheaper than GaAs, compatibility with Si CMOS technology, and low cost. It is used in microwave devices, mobile communications, high-frequency circuits and other ...

Claims

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Application Information

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IPC IPC(8): H01L21/324
Inventor 郝跃付毅初戴显英刘光宇曹婷婷张金榜苑志刚张鹤鸣
Owner XIDIAN UNIV
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