Method for preparing carbide film by carbonizing graphene reinforced polyimide resin
A polyimide resin, graphene technology, applied in solid-state chemical plating, metal material coating process, coating and other directions, can solve the problems of low carbonization rate, long carbonization cycle, and high carbonization temperature of carbonized film, and reduce the The effect of carbonization temperature, small shrinkage of material and excellent mechanical properties
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specific Embodiment approach 1
[0019] Specific embodiment one: utilize graphene to strengthen polyimide resin carbonization to prepare the method for carbonized film in the present embodiment is to carry out according to the following steps:
[0020] Step 1. Add 0.02mol 4,4'-diaminodiphenyl ether (ODA) and 0.02mol benzophenone tetracarboxylic dianhydride (BTDA) into 100mL N,N-dimethylacetamide (DMAC), and then in an inert atmosphere Mechanically stir at a stirring speed of 300-1000r / min for 4.5-6.5 hours to obtain a PAA solution;
[0021] Step 2, then add 0.05-0.2g of graphene to the PAA solution, and in an inert atmosphere at 0-5°C, stir at a stirring speed of 300-1000r / min to carry out in-situ polymerization reaction, and the reaction time is 1-2h; to obtain solution A ;
[0022] Step 3. Spread solution A on a clean glass plate, then raise the temperature to 60°C for 2h, then raise the temperature to 100°C for 1h, then raise the temperature to 200°C for 1h, then raise the temperature to 300°C for 1h; obt...
specific Embodiment approach 2
[0024] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the inert atmosphere in step 1 is N2 atmosphere or HE atmosphere. Other steps and parameters are the same as in the first embodiment.
specific Embodiment approach 3
[0025] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the inert atmosphere described in step two is N 2 Atmosphere or atmosphere. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.
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