Nitride passivation method for cavity surfaces of vacuum-cleaved high-power semiconductor laser

A semiconductor and laser technology, applied in the field of semiconductor laser coating, to avoid corrosion and contamination, reduce non-radiative recombination, and improve reliability

Inactive Publication Date: 2012-07-11
BEIJING UNIV OF TECH
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Problems solved by technology

[0006] The purpose of the present invention is to provide a high-power semiconductor laser cavity surface protection process, which can protect the fresh cavity surface of the semiconductor laser ...

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  • Nitride passivation method for cavity surfaces of vacuum-cleaved high-power semiconductor laser
  • Nitride passivation method for cavity surfaces of vacuum-cleaved high-power semiconductor laser
  • Nitride passivation method for cavity surfaces of vacuum-cleaved high-power semiconductor laser

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Embodiment Construction

[0018] 1. Put the InGaAs / GaAs / AlGaAs / semiconductor laser with a lasing wavelength of 980nm on the cleavage table 4 in the new vacuum cleavage machine 2 with the ion source device, and feed high-purity nitrogen gas from the ion source 1, and the flow rate 35sccm, ion source energy 80ev, forming N in the cleavage chamber + When ions are cleaved in a pure nitrogen environment, the dangling bonds on the fresh cavity surface of the semiconductor laser are in the N + Reduced under the action of ions, put the cleaved semiconductor laser Bar 3 into the special coating fixture, and then quickly put it on the planetary turntable of the electron beam evaporation vacuum coating machine.

[0019] 2. Nitrogen ion deep plating passivation, pump the vacuum coating machine to high vacuum, turn on the nitrogen source, pass in the flow rate of 60sccm, bombard the cavity surface of the semiconductor laser with 100ev nitrogen ion beam, passivation temperature 250 ℃, passivation time 10min, in Rem...

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Abstract

The invention relates to a nitride passivation method for cavity surfaces of a vacuum-cleaved high-power semiconductor laser, belonging to the technical field of a semiconductor optoelectronic device process. The purpose of the method is to increase an optical catastrophe threshold, reduce the degradation rate of the laser, and prolong the service life of the laser under the condition that the output power of the semiconductor laser is not changed. The method comprises the following steps: first, a semiconductor laser chip is cleaved into bars in a vacuum-cleaving machine, high-purity nitrogen is filled in the process as a protective gas, the whole cleaving process is in the atmosphere of high-purity nitrogen, and fresh cavity surface dangling bonds are decreased after cleavage. After cleavage, the laser chip bars are rapidly put in a vacuum coating machine, nitrogen ions are used for carrying out cavity surface depth passivation to form a GaN passivating layer, and useless impuritiesgenerated by nitride passivation are removed through hydrogen ions. After the semiconductor laser forms the GaN passivating layer, a front cavity surface and a rear cavity surface are respectively subjected to anti-reflection film and high-reflection film plating. The technical scheme can be applied to the manufacturing of various high-power semiconductor lasers.

Description

technical field [0001] The invention discloses a nitrogen passivation method for a vacuum cleavage high-power semiconductor laser cavity surface, which belongs to the technical field of semiconductor optoelectronics and relates to semiconductor laser film coating. Background technique [0002] High-power semiconductor lasers have the characteristics of all solid-state, small size, light weight, long life, high efficiency, high reliability, adjustable, stable low-voltage operation, etc. They are mainly used as pump sources for solid-state lasers, and in laser processing, laser Welding, laser printing and other fields have a wide range of applications. Semiconductor lasers are the key components of a new generation of high-tech, and will play a pivotal role in future industrial development. [0003] During the production and use of semiconductor lasers, the optical components will degrade. Degradation will affect the life and stability of semiconductor lasers. There are thr...

Claims

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Application Information

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IPC IPC(8): H01S5/028
Inventor 崔碧峰陈京湘计伟郭伟玲
Owner BEIJING UNIV OF TECH
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