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Acidic chemical and mechanical polishing composition

A polishing composition, chemical mechanical technology, applied in the direction of polishing composition containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve the adverse effects of CMP on the overall performance, the decrease of the mechanical strength of the low-k dielectric layer, and the low-k Eliminate film delamination and other problems, achieve excellent polishing effect, increase polishing removal rate, and optimize surface roughness

Active Publication Date: 2013-11-20
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when k<2.2, the mechanical strength of the low-k dielectric layer decreases, and low-k film delamination is prone to occur, so low-pressure polishing equipment and polishing compositions must be developed
[0006] In general, reducing downforce can adversely affect overall CMP performance, including polishing rate, severely impacting throughput
Some patents have proposed low-down pressure polishing compositions, such as CN201110065350.2, US6,620,037, CN1644644A, but research in this area still needs to be strengthened

Method used

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  • Acidic chemical and mechanical polishing composition
  • Acidic chemical and mechanical polishing composition
  • Acidic chemical and mechanical polishing composition

Examples

Experimental program
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Effect test

Embodiment 1

[0033] The raw silica sol flows through the regenerated cation exchange resin column and anion exchange resin column at a flow rate of 1-10 m / hour in sequence to obtain deionized silica sol, and adjust the pH value to After 10.0°C, heat to 50-60°C, slowly drop 0.6wt% of γ-methacryloxypropyltrimethoxysilane under stirring, keep stirring for 6 hours, add water to dilute to 50nm with effective solid content of 30%. Silica Hydrosol.

[0034] Add 10 grams of aminoacetic acid, 0.1 gram of benzotriazole and 0.1 gram of polyalkylene glycol into 800 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 100 grams of refined and modified carbon dioxide Silica hydrosol.

[0035] Add 100 grams of 30% oxidant hydrogen peroxide solution before polishing, and use H 2 SO 4 Calibrate the pH value to 4.0, and finally add water to make up 1000 grams and stir evenly, then immediately perform copper polishing under the pressure of 0.5Psi, the polishing...

Embodiment 2

[0037] The raw silica sol flows through the regenerated cation exchange resin column and anion exchange resin column at a flow rate of 1-10 m / hour in sequence to obtain deionized silica sol, and adjust the pH value to After 10.0°C, heat to 50-60°C, slowly drop 0.6wt% of γ-methacryloxypropyltrimethoxysilane under stirring, keep stirring for 6 hours, add water to dilute to 50nm with effective solid content of 30%. Silica Hydrosol.

[0038] Add 10 grams of aminoacetic acid, 0.1 gram of benzotriazole and 0.1 gram of polyalkylene glycol into 800 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 100 grams of refined and modified carbon dioxide Silica hydrosol.

[0039] Add 100 grams of 30% oxidant hydrogen peroxide solution before polishing, and use H 2 SO 4 Calibrate the pH value to 4.0, add water to make up 1000 grams and stir evenly, then immediately perform copper polishing under 1.0Psi pressure, the polishing removal rate MRR i...

Embodiment 3

[0041] The raw silica sol flows through the regenerated cation exchange resin column and anion exchange resin column at a flow rate of 1-10 m / hour in sequence to obtain deionized silica sol, and adjust the pH value to After 10.0°C, heat to 50-60°C, slowly drop 0.6wt% of γ-methacryloxypropyltrimethoxysilane under stirring, keep stirring for 6 hours, add water to dilute to 50nm with effective solid content of 30%. Silica Hydrosol.

[0042] Add 10 grams of aminoacetic acid, 0.1 gram of benzotriazole and 0.1 gram of polyalkylene glycol into 800 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 100 grams of refined and modified carbon dioxide Silica hydrosol.

[0043] Add 100 grams of 30% oxidant hydrogen peroxide solution before polishing, and use H 2 SO 4 Calibrate the pH value to 4.0, add water to make up 1000 grams and stir evenly, then immediately perform copper polishing under 2.0Psi pressure, the polishing removal rate MRR i...

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Abstract

The invention provides an acidic chemical and mechanical polishing composition. The pH value of the acidic chemical and mechanical polishing composition is 2-7, and the acidic chemical and mechanical polishing composition comprises 1-20% by weight of abrasive material, 0.5-10% by weight of oxidant, 0.1-10% by weight of complexing agent, 0.001-1% by weight of corrosion inhibitor, 0.001-5% by weight of organic film-forming auxiliaries and the balance of pH regulator and deionized or distilled water, wherein the abrasive material is of colloidal silica sol after modification in the special step, and the average particle size is of 10-200nm. According to the chemical and mechanical polishing composition provided by the invention, the abrasive material is refined and modified; by using the method, the stability of the abrasive material in polishing slurry can be effectively upgraded, and polishing removal rate and surface roughness degree are respectively optimized to a certain extent; and the unique adding effect of the organic film-forming auxiliaries can well balance the strength of chemical corrosion action and the strength of mechanical grinding action, and achieve the effects of improving polishing removal efficiency and performing global planarization.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing compositions, in particular to acidic chemical mechanical polishing compositions. Background technique [0002] An integrated circuit chip is composed of millions of active elements formed on or in a silicon substrate. These mutually separated active elements are interconnected by metal wiring to form functional circuits and components. Because Cu has low resistivity and high resistance to electromigration, it becomes an ideal interconnection material to replace the traditional commonly used aluminum wiring. Cu is a post-hydrogen metal and is not easy to be etched. Therefore, in the world, the damascene process is generally used for wiring, and the excess copper and diffusion barrier layer on the upper layer are removed by chemical mechanical polishing technology. With the development of microelectronics technology, the feature size has entered the nanometer level, which requires near...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C09K3/14C23F3/06
Inventor 路新春戴媛静潘国顺雒建斌
Owner TSINGHUA UNIV
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