Preparation method of insulator silicon dioxide film in MIM (metal-insulator-metal) type capacitor

Abstract

The invention relates to the field of semiconductor manufacturing, particularly to a preparation method of an insulator silicon dioxide film in a MIM (metal-insulator-metal) type capacitor. According to the preparation method of the insulator silicon dioxide film in the MIM type capacitor, provided by the invention, an entire deposition process of the silicon dioxide film can be finished through cyclic processes of multiple sub atmosphere chemical vapor depositions and the passivating dehydrogenating treatment technology, and therefore, the Si-OH bond existed in the film is effectively removed, and the performance of the silicon dioxide film in MIM is improved; and the insulator silicon dioxide film in the MIM type capacitor is good in electrical stability.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor integrated circuits, in particular to a method for preparing an insulator silicon dioxide film in a MIM capacitor. Background technique [0002] Sub Atmospheric Chemical Vapor Deposition (Sub Atmosphere Chemical Vapor Deposition, referred to as SACVD) is a widely used chemical vapor deposition technology. The thermochemical reaction is carried out between 300-500°C. Since the reaction pressure is generally 50-600torr, which is slightly lower than atmospheric pressure, it is called sub-atmospheric chemical vapor deposition. [0003] Since SACVD does not need to use plasma to dissociate the reaction gas during the reaction process, but generates silicon dioxide through the reaction of active oxygen atoms in ozone and silicon in TEOS, therefore, the silicon dioxide film (insulating layer) prepared by SACVD method ) has no plasma-induced damage (Plasma Induced Damage, PID) to the substrate ...

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Problems solved by technology

[0006] image 3 Prepare the infrared spectrogram of silicon dioxide thin film for SACVD method in the background technology of the present invention; image 3 As shown, since the properties of the silicon oxide film of the insulating layer directly determine the performance of the MIM capacitor, the requirements for the properties of the film are relatively high, but the temperature of SACVD is relatively low in the deposition process compared to the thermal oxygen reaction of the furnace tube, and there is no plasma The bombardment effect of the body, the film will contain a large number of Si-OH bonds, and the film contains a certain amount of H, which will cause the properties of the film to be relatively poor. In the actual production process, due to the barrier of the self-aligned silicide region The quality of the film is poor, and it cannot well block the boron precipitation in the source and drain regions and cause defects

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