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Method for producing silicon doping zinc oxide film, produced film and application thereof

A zinc oxide thin film, silicon doping technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, vacuum evaporation plating, etc., can solve the problems of film crystallization quality decline, resistivity increase, etc., to achieve good film adhesion, Decrease in resistivity and realize the effect of large-area deposition

Inactive Publication Date: 2012-08-29
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also some problems in the ordinary sputtering method. Large particle target material clusters are easy to be generated during sputtering, and the clusters form defects in the film, resulting in a decrease in the crystal quality of the film and an increase in the resistivity.

Method used

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  • Method for producing silicon doping zinc oxide film, produced film and application thereof
  • Method for producing silicon doping zinc oxide film, produced film and application thereof
  • Method for producing silicon doping zinc oxide film, produced film and application thereof

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preparation example Construction

[0018] see figure 1 , showing a method for preparing a silicon-doped zinc oxide film according to an embodiment of the present invention, which includes the following steps:

[0019] the SiO 2 Powder and ZnO powder are mixed and sintered as SZO target, the SiO 2 The mass ratio of the powder to the ZnO powder is 1 / 199~1 / 66;

[0020] Put the SZO target into the magnetron sputtering chamber, vacuumize, set the working pressure to be 0.2Pa to 1.5Pa, the flow rate of the inert gas to be 15sccm to 25sccm, the substrate temperature to be 300°C to 800°C, and the sputtering of the SZO layer. The shooting power is 45W~300W, and an electromagnetic field is applied in the direction perpendicular to the flying direction of the sputtered particles. The number of coil turns in the electromagnetic field is 50N~500N, and the coil area is 15cm. 2 ~80cm 2 , the excitation current is 0.1A ~ 5A, and the silicon-doped zinc oxide film is sputtered on the substrate.

[0021] In step S01, the SiO...

Embodiment 1

[0028] Select 99.9% pure SiO 2 The mass ratio of powder and ZnO powder is 1:99. After uniform mixing, 1000 ℃ high temperature sintering becomes a ceramic target of Φ50×2mm, and the target is loaded into the vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, dried with high-purity nitrogen, and put into a vacuum chamber. The distance between the target and the substrate was set to 60 mm. Use mechanical pump and molecular pump to pump the vacuum degree of the cavity to 6.0×10 -4 Pa, 20sccm of argon gas was introduced, the pressure was adjusted to 1.0Pa, the substrate temperature was set to 450°C, and the sputtering power was adjusted to 60W. Apply a magnetic field coil on the vertical surface of the base target, the number of coil turns is 300N, and the coil area is 50cm 2 , the excitation current is 3.5A, and the film deposition begins. The resistivity of the obtained film is 3.9×10 -4 Ω·cm...

Embodiment 2

[0030] Select 99.9% pure SiO 2 The mass ratio of powder and ZnO powder is 1:99. After uniform mixing, 1000 ℃ high temperature sintering becomes a ceramic target of Φ50×2mm, and the target is loaded into the vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, dried with high-purity nitrogen, and put into a vacuum chamber. The distance between the target and the substrate was set to 60 mm. Use mechanical pump and molecular pump to pump the vacuum degree of the cavity to 6.0×10 -4 Pa, 20sccm of argon gas was introduced, the pressure was adjusted to 1.0Pa, the substrate temperature was set to 450°C, and the sputtering power was adjusted to 80W. Apply a magnetic field coil on the vertical surface of the base target, the number of coil turns is 300N, and the coil area is 50cm 2 , the excitation current is 2.5A, and the film deposition begins. The resistivity of the obtained film is 8.8×10 -4 Ω·cm...

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Abstract

The invention relates to the field of semiconductor material production, and provides a method for producing a silicon doping zinc oxide film, a produced film and an application thereof, wherein the method comprises the following steps that: SiO2 powder and ZnO powder are mixed and sintered to be used as an SZO target, and the mass ratio of SiO2 to ZnO is 1:199-1:66; and the SZO target is contained in a magnetron sputtering cavity, the cavity is vacuumized, sputtering parameters are set, and a silicon doping zinc oxide film is sputtered onto a substrate. The invention further provides the silicon doping zinc oxide film which is produced by the method and the application of the silicon doping zinc oxide film on semiconductor photoelectric devices.

Description

technical field [0001] The invention belongs to the field of preparation of semiconductor optoelectronic materials, and particularly relates to a preparation method of a silicon-doped zinc oxide thin film, the prepared thin film and application thereof. Background technique [0002] Transparent conductive film is an optoelectronic material that combines optical transparency and electrical conductivity. Because of its excellent optoelectronic properties, it has become a research hotspot and frontier topic in recent years. At present, the vast majority of transparent conductive film materials used in applications use Sn-doped In 2 O 3 , referred to as ITO film). ITO thin film has stable performance, simple preparation process and good production repeatability, and has always been the material occupying a dominant position in the market. Although ITO film is currently the most widely used transparent conductive film material with excellent comprehensive optoelectronic proper...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/08C23C14/35H01L31/0296H01L31/18
CPCY02P70/50
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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