Preparing method for Ti-Si alloy target materials

A manufacturing method and technology of titanium-silicon alloy, applied in the field of metallurgy, can solve the problems of composition segregation, poor alloy ductility, brittle cracks, etc., and achieve the effects of wide composition ratio, high yield and fine grain size

Inactive Publication Date: 2012-10-03
METALINK SPECIAL ALLOYS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Titanium-silicon alloy is an intermetallic compound. The titanium-silicon target prepared by the existing smelting method has disadvantages such as alloy brittleness and composition segregation. The amount of silicon added generally does not exceed 15% of the weight, and the ingot with more than 15% silicon added is prone to cracking , less than 15% silicon addition is easy to produce composition s

Method used

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  • Preparing method for Ti-Si alloy target materials

Examples

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Effect test

Example Embodiment

[0018] Embodiment 1: Choose titanium powder with purity of 99.9%, purity of 99.99% silicon powder, average particle size of titanium powder 42μm, average particle size of silicon powder 32μm, and mix the powder according to the weight ratio of silicon:titanium=10:90, then pack Into the mixer, the mixing time is 9 hours. Put the mixed powder into a graphite mold, the size of the graphite mold is Ф300x300, the wall thickness is 20mm, and then it is placed in a vacuum hot pressing furnace. The upper and lower pressure heads apply a pressure of 5MPa for pre-compression, and then the vacuum system starts to vacuum. When it reaches 1*10-2Pa, heat up to 650°C and keep it for 2 hours, then quickly heat up to 1000°C at a rate of 70°C / min, and pressurize to 10MPa, keep it for 4 hours, stop heating, and cool down with the furnace. The final 90 / 10 titanium silicon round target is obtained by machining.

Example Embodiment

[0019] Embodiment 2: Choose titanium powder with purity of 99.95%, purity of 99.99% silicon powder, average particle size of titanium powder 62μm, average particle size of silicon powder 40μm, and mix the powder according to the weight ratio of silicon:titanium=30:70, then pack Put it into the mixing machine for 1 hour. Put the mixed powder into a graphite mold. The size of the graphite mold is Ф350x350 and the wall thickness is 20mm. Then it is placed in a vacuum hot pressing furnace. The upper and lower pressure heads apply a pressure of 10MPa for pre-compression, and then the vacuum system starts to vacuum. When it reaches 1*10-2Pa, heat up to 700°C, keep it warm for 3 hours, then quickly heat up to 1100°C at a rate of 80°C / min, and pressurize to 40MPa, keep it for 2 hours, stop heating, and cool it out after the furnace. The final 70 / 30 titanium silicon round target is obtained by machining.

Example Embodiment

[0020] Embodiment 3: Choose titanium powder with a purity of 99.99%, silicon powder with a purity of 99.91%, titanium powder with an average particle size of 80 μm, and silicon powder with an average particle size of 100 μm. After mixing the powder at the weight ratio of silicon: titanium = 50:50, Put it into the mixer for 7 hours. Put the mixed powder into a graphite mold, the size of the graphite mold is Ф400x400, and the wall thickness is 20mm, and then put it into a vacuum hot pressing furnace. The upper and lower pressure heads apply a pressure of 15MPa for pre-compression, and then the vacuum system starts to vacuum. When it reaches 1*10-2Pa, heat up to 750°C, keep it warm for 4 hours, then quickly heat up to 1300°C at a heating rate of 100°C / min, and pressurize to 80MPa, keep it warm for 6 hours, stop heating, and cool off after the furnace , Machining to obtain the final 50 / 50 titanium silicon round target.

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Abstract

The invention discloses a preparing method for Ti-Si alloy target materials. According to the method, silica powder and titanium powder are taken as raw materials, are mixed mechanically according to a certain proportion, filled into a graphitic mould, and are treated with vacuum induction hot pressing sintering to prepare the Ti-Si alloy target materials with different ingredients and sizes. The Ti-Si alloy target materials prepared according to the method has the advantages that the grains are fine; the ingredients are uniform; segregation is avoided; the cost is low; the density is high; and mass production is realized.

Description

technical field [0001] The invention relates to the field of metallurgy, in particular to a method for manufacturing a titanium-silicon alloy target. Background technique [0002] Physical vapor deposition (PVD) technology is to vaporize solid materials into gaseous atoms, molecules or parts into ions under vacuum conditions, and deposit a thin film with certain special functions on the surface of the substrate through a low-pressure gas (or plasma) process. technology. The main methods of physical vapor deposition are evaporation, sputtering, and ion plating. Chemical vapor deposition (CVD) is also widely used as a kind of coating process, but in general, compared with CVD, PVD has low process temperature, short production cycle, no pollution, and the surface of PVD coating layer has better metallic luster and thin film thickness. , high hardness, stable chemical properties, small friction coefficient and many other advantages, it is gradually popularized in the fields o...

Claims

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Application Information

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IPC IPC(8): B22F3/14C23C14/06
Inventor 马步洋王彬
Owner METALINK SPECIAL ALLOYS CORP
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