Method for preparing low-density ITO evaporation target material

A low-density, target technology, applied in the field of preparation of ITO oxide evaporation materials, can solve the problems of high production cost and risk, and achieve the effects of reducing production cost and risk, reducing preparation process, and reducing sintering pressure

Active Publication Date: 2012-10-17
贵州法拉第磁电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, when the target is sintered, high-pressure oxygen is added to assist the sintering, and the production cost and risk are relatively high.

Method used

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  • Method for preparing low-density ITO evaporation target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Among ITO powder raw materials, In 2 o 3 : SnO 2 The weight ratio is 90%:10%, the average particle size D50 of the powder is 120nm, and the specific surface area is 11.6m 2 / g. The ITO powder was placed in a high-temperature calciner, and sintered in an oxygen atmosphere at normal pressure at a temperature of 1550° C. for 6 hours. The sintered ITO powder was mixed with 3wt% PVA and dried at 80°C. Put the fat-mixed ITO powder into a stainless steel mold, and hold the pressure at 40MPa for 3 minutes to form. Put the ITO biscuit into the degreasing furnace, degrease at 600°C, and keep it warm for 10 hours. The degreased ITO biscuit was put into a high-temperature sintering furnace, and sintered in an oxygen atmosphere at normal pressure at a temperature of 1400° C. for 10 hours. The density of the ITO evaporation target is 61.5%, and the resistivity is 5.3×10 -3Ω·cm. When the electron beam voltage is 7.5kV and the beam current is 15mA, the film thickness is 250nm, ...

Embodiment 2

[0040] Among ITO powder raw materials, In 2 o 3 : SnO 2 The weight ratio is 90%:10%, the primary particle size D50 of the powder is 105nm, and the specific surface area is 12.4m 2 / g. The ITO powder was placed in a high-temperature sintering furnace, and sintered in an oxygen atmosphere at normal pressure at a temperature of 1530° C. for 6 hours. The sintered ITO powder was mixed with a total amount of 3wt% of PVA and liquid paraffin, and then dried at 80°C. Put the fat-mixed ITO powder into a stainless steel mold, and hold the pressure at 40MPa for 3 minutes to form. Put the ITO biscuit into a high-temperature furnace, degrease at 600°C, and keep it warm for 10 hours. The degreased ITO biscuit was put into a high-temperature furnace, and sintered in an oxygen atmosphere at normal pressure at a temperature of 1480° C. for 8 hours. The density of the ITO evaporation target is 62.2%, and the resistivity is 6.3×10 -3 Ω·cm. When the electron beam voltage is 7.5kV and the b...

Embodiment 3

[0042] Among ITO powder raw materials, In 2 o 3 : SnO 2 The weight ratio is 95%:5%, the primary particle size D50 of the powder is 45nm, and the specific surface area is 15.0m 2 / g. The ITO powder was placed in a high-temperature sintering furnace, and sintered in an oxygen atmosphere at normal pressure at a temperature of 1500° C. for 6 hours. The sintered ITO powder was mixed with a total of 2wt% of PVA and Tween-80, and dried at 80 °C. Put the fat-mixed ITO powder into a stainless steel mold, and hold the pressure at 40MPa for 3 minutes to form. Put the ITO biscuit into a high-temperature furnace, degrease at 600°C, and keep it warm for 10 hours. The degreased ITO biscuit was put into a high-temperature furnace, and sintered in an oxygen atmosphere at normal pressure at a temperature of 1500° C. for 8 hours. The density of the ITO evaporation target is 62.5%, and the resistivity is 7.2×10 -3 Ω·cm. When the electron beam voltage is 7.5kV and the beam current is 15mA,...

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Abstract

The present invention relates to a method for preparing low-density ITO evaporation target material. The method includes the following steps of: adopting highly active and monodisperse ITO nanometer powder as raw materials; performing high-temperature pre-firing, grease blending, and granulation treatment to obtain granulated ITO powder with uniform properties; and performing sintering at oxygen atmosphere with constant pressure or no pressure after molding and degreasing treatment to obtain the low-density ITO evaporation target material. The method is advantaged in production safety, low cost, capability of effectively preventing cracking and spray phenomenon in evaporation, good uniformity and favorable film-forming characteristic.

Description

technical field [0001] The invention relates to a preparation method of an evaporation coating material, in particular to a preparation method of an ITO oxide evaporation material used for the transparent electrode of a GaN-based light-emitting diode. Background technique [0002] LED (Light Emitting Diode), or light-emitting diode, is a solid-state semiconductor device that can directly convert electrical energy into light energy. LED has changed the principle of traditional incandescent lamp tungsten luminescence and energy-saving lamp sanki toner luminescence, and uses electric field luminescence. LED has the advantages of small size, long life, high luminous efficiency, high brightness, low heat, no radiation, low power consumption, environmental protection and durability. LEDs are used in a wide range of fields, including communications, consumer electronics, automobiles, lighting, signal lights, etc., which can be roughly divided into five major fields: backlight, li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622
Inventor 周贤界郑子涛许积文苏中华
Owner 贵州法拉第磁电科技有限公司
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