Method for producing monocrystalline silicon cast ingot

A production method, single crystal silicon technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of battery efficiency reduction, achieve the effects of reducing light attenuation, low energy consumption, and improving photogenerated current

Inactive Publication Date: 2012-10-17
上海太阳能工程技术研究中心有限公司
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Problems solved by technology

These dislocations and their gettering effects cause rapid recombination of...

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  • Method for producing monocrystalline silicon cast ingot

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Embodiment 1

[0029] 1) Put the dislocation-free raw material monocrystalline silicon block as the seed crystal 3 into the seed crystal tank 2 of the crucible 1. The crucible is a square quartz ceramic crucible coated with silicon nitride. The main body of the crucible is 450Kg grade 840mm*840mm*400mm , make sure that the crystal direction of the seed crystal is vertically upward; then place 450Kg polysilicon 4 on the raw material monocrystalline silicon block 3, and add P-type dopant boron to keep the doped crystal resistivity at 1.5- 2Ω·cm.

[0030] 2) The furnace chamber of the ingot casting furnace is evacuated and then directly fed with argon gas. Adjust the position of the crucible so that the dopant, polysilicon and part of the seed crystal close to the polysilicon are heated; gradually heating to above 1412°C makes the polysilicon begin to melt, and keeps the temperature above 1412°C for a period of time, so that the dopant, polysilicon and the seed crystal close to the polysilicon...

Embodiment 2

[0034] 1) Put the dislocation-free raw material monocrystalline silicon block as the seed crystal 3 into the seed crystal tank 2 of the crucible 1. The crucible is a silicon nitride-coated round quartz ceramic crucible, and the main body of the crucible is a 60Kg-grade 18-inch crucible. The height is 450mm, and the crystal direction of the seed crystal is determined to be vertically upward; then 50Kg of polysilicon 4 is placed on top of 3 pieces of raw material single crystal silicon, and the P-type dopant boron is added to keep the resistivity of the doped crystal At 1.5-2Ω·cm.

[0035] 2) The furnace chamber of the ingot casting furnace is evacuated and then directly fed with argon gas. Adjust the position of the crucible in the furnace so that the dopant, polysilicon and some seed crystals close to the polysilicon are heated; gradually heating to above 1412°C makes the polysilicon begin to melt, and keeps the temperature above 1412°C for a period of time, so that the dopan...

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Abstract

The invention discloses a method for producing a monocrystalline silicon cast ingot, which comprises the following steps: 1) placing seed crystals in a seed crystal groove at the bottom of a crucible according to same crystal orientation, adding a silicon material and a doping agent in the crucible; 2) melting the silicon material and the doping agent over the seed crystals, and partially melting the seed crystals; 3) carrying out directional solidification on the silicon melt from bottom to top by using a crucible descending method, and inducing the growth of the quasi monocrystalline by unmelted seed crystals to finally form the monocrystalline silicon cast ingot. The obtained monocrystalline silicon has the characteristics of less dislocation density, less oxygen stacking fault and better consistence of crystal orientation, and can satisfy a texturing process of a monocrystalline silicon solar energy battery, the monocrystalline silicon sheets are corroded to textures with a pyramid state along (100) the crystal orientation, thereby the absorbancy of the battery on light can be increased.

Description

technical field [0001] The invention relates to a method for manufacturing solar-grade monocrystalline silicon, in particular to a method for producing monocrystalline silicon ingots that integrates the advantages of Czochralski monocrystalline silicon and ingot polycrystalline silicon. Background technique [0002] At present, solar-grade monocrystalline silicon is mainly produced by Czochralski method (CZ method) or zone melting method (FZ method). The Czochralski method is slowly pulled from the pool of molten silicon through steps such as seed seeding and necking. For the FZ process, the solid material feed passes through the melting zone and re-solidifies on the other side of the melting zone. Single crystal silicon produced in these ways contains radially distributed impurities and defects such as line defects, oxygen-induced stacking fault rings and interstitial "swirl" defects or clusters of vacancies. The CZ method is used as the main single crystal silicon growth...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/06
Inventor 李红波张滢清张愿成李宏军董海成朱旭
Owner 上海太阳能工程技术研究中心有限公司
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