A double polycrystalline strained si BiCMOS integrated device and its preparation method

Abstract

The invention discloses a double-polysilicon strained Si BiCMOS integrated device and a preparation method. The preparation method comprises growing an N-type Si epitaxial layer on an SOI (silicon on insulator) substrate to serve as the collector region of the bipolar device, preparing deep trench isolation, and sequentially preparing a base polysilicon, a base region and an emitter region to obtain a HBT (heterojunction bipolar transistor) device; etching an active region trench of an NMOS (N-channel metal oxide semiconductor) and PMOS (P-channel metal oxide semiconductor) device by lithography, continuously growing a Si buffer layer, a gradient SiGe layer, a fixed-component SiGe layer, an N-type strained Si channel layer and a Si buffer layer, a gradient SiGe layer, a fixed-component SiGe layer, a strained Si P-LDD (lightly doped drain) layer, a strained Si channe layer, a strained Si P-LDD layer, and a fixed-component SiGe layer in the active region trench of the NMOS and PMOS devices respectively, and preparing a drain and a gate to obtain the PMOS device; preparing a gate dielectric layer and gate polysilicon of the NMOS device to obtain the NMOS device; and preparing the strained Si BiCMOS integrated device and circuit with a MOS conductive channel of 22 to 45nm. According to the invention, the method can prepare the strained Si BiCMOS integrated device with enhanced performance at 600 to 800 DEG C by fully using the characteristics of mobility anisotropy of the strained Si material.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a double-polycrystalline strained Si BiCMOS integrated device and a preparation method. Background technique [0002] The integrated circuit, which appeared in 1958, is one of the most influential inventions of the 20th century. Microelectronics, which was born based on this invention, has become the basis of existing modern technology, accelerating the process of knowledge and informationization of human society, and at the same time changing the way of thinking of human beings. It not only provides humans with a powerful tool to transform nature, but also opens up a broad space for development. [0003] Semiconductor integrated circuits have become the basis of the electronics industry, and people's huge demand for the electronics industry has prompted the rapid development of this field. In the past few decades, the rapid development of ...

AI Technical Summary

Problems solved by technology

[0008] Due to the low mobility of Si material carrier materials, the performance of integrated circuits manufactured using Si BiCMOS technology, especially the frequency performance, is greatly limited; for SiGe BiCMOS technology, although SiGe HBT is used for bipolar transistors, However, Si CMOS is still used for unipolar devices that restrict the improvement of the frequency characteristics of BiCMOS integrated circuits, so these limit the further improvement of the performance of BiCMOS integrated circuits

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