Transverse signal operation instruction (SOI) power device

Abstract

The invention discloses a transverse signal operation instruction (SOI) power device. The transverse SOI power device comprises a semiconductor substrate, an insulating medium layer and a semiconductor active layer, wherein a body region and a drain region are arranged on the surface of the semiconductor active layer, an interval exists between the body region and the drain region to form a drift region of the device, a body contact region and a source region are sequentially formed on the surface of the body region, a silicon window is arranged on the insulating medium layer, the bottom of the body region is located in the silicon window or enters into the semiconductor substrate through the silicon window, the bottom of the body contact region enters into the silicon window, and a common leading-out end of the source region and the body contact region serves as a source electrode. The transverse SOI power device has the advantages that the body region is effectively led out, floating body effects of a Kink effect, a parasitic triode effect, memory effect and the like are eliminated, the off state withstand voltage and gate control capacity are improved, simultaneously the puncture voltage in an on state is boosted, characteristics of the SOI device are improved, and the possibility of a partial appendage effect appearing in a T-shaped gate structure and a base transceiver station (BTS) structure is eliminated.

Description

[0001] technical field [0002] The invention relates to the technical field of SOI semiconductor power devices and SOI intelligent power integrated circuits. Background technique [0003] The active layer of the SOI circuit is completely separated from the substrate, and between the high-voltage / low-voltage units by an insulating layer, while the active layer of the silicon-based circuit is directly electrically connected to the substrate, and the high-voltage and low-voltage units, the active layer and the The isolation between the substrate layers is accomplished by a reverse biased PN junction. Compared with bulk silicon technology, SOI technology has the advantages of high speed, low power consumption, high integration and easy isolation, etc., and weakens the latch-up effect and has strong anti-radiation ability, which makes the reliability and anti-software of SOI integrated circuits The failure capability is greatly improved. [0004] Smart power integrated circuit...

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Problems solved by technology

[0008] In order to solve the technical problems in the above-mentioned prior art, the present invention proposes a lateral SOI power device. Adopting the present invention, on the one hand, it solves the off-state tolerance caused by the floating body effect of the lateral SOI LDMOS with the conventional body floating in the air. Voltage, gate control ability, and breakdown voltage drop in the on state improve the characteristics of SOI devices; on the other hand, it solves the problem of local attachment effect that occurs when the channel width of the T-shaped gate structure is large. ; On the other hand, solve the BTS structure P + Body contact area occupies N + The area of ​​the source region causes the problem of the decrease of the effective width of the channel and the increase of the source contact resistance, and the BTS structure in the P + The problem of local attachment effect when the body contact area is too wide

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