Zn-doped Ge2Sb2Te5 phase-change storage film material and preparation method thereof

A phase-change storage and thin-film material technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems that affect the reliability of devices that affect the erasing and writing speed, short data storage life, and poor crystallization speed, etc. , achieve good thermal stability and data retention, improve crystallization activation energy, and improve data retention life

Active Publication Date: 2012-12-12
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) Ge 2 Sb 2 Te 5 There is a large density change during the phase transition, and the crystallization speed is not good, generally hundreds of ns, which affects the erasing speed and device reliability;
[0006] (2) In addition, due to the low crys...

Method used

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  • Zn-doped Ge2Sb2Te5 phase-change storage film material and preparation method thereof
  • Zn-doped Ge2Sb2Te5 phase-change storage film material and preparation method thereof
  • Zn-doped Ge2Sb2Te5 phase-change storage film material and preparation method thereof

Examples

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Embodiment 1

[0023] A kind of Zn doped Ge of the present invention2 Sb 2 Te 5 Phase change memory thin film material, its chemical structure is Zn X (Ge 2 Sb 2 Te 5 ) 100-X , where 0

[0024] 1. In the magnetron sputtering coating system (JGP-450 type), the alloy zinc target is installed in the magnetron direct current (DC) sputtering target, and the Ge 2 Sb 2 Te 5 The target is installed in the magnetron radio frequency (RF) sputtering target, and the quartz sheet or silicon oxide sheet is used as the substrate. The sputtering chamber of the magnetron sputtering coating system is vacuumed until the vacuum degree of the chamber reaches 1.6×10 -4 Pa, and then pass high-purity argon gas with a volume flow rate of 47.6ml / min (SCCM standard condition milliliter per minute) into the sputtering chamber until the pressure in the sputtering chamber reaches the ignition pressure of 0.3Pa required for sputtering, and then control the all...

Embodiment 2

[0028] Basically the same as Example 1, the difference is that in the sputtering process, the sputtering power of the alloy Zn target is controlled to be 3W, and the alloy Ge 2 Sb 2 Te 5 The sputtering power of the target is 100W, and the obtained Zn-doped Ge 2 Sb 2 Te 5 Zn phase change memory film X (Ge 2 Sb 2 Te 5 ) 100-X The Zn content (at%) is 6.37%.

[0029] The prepared film was tested for in-situ resistance performance, and the test results were as follows: figure 1 with figure 2 shown, from figure 1 with figure 2 It can be seen that the performance index of the thin film prepared in embodiment 2 is as follows; crystallization temperature T c is 188°C, the crystallization activation energy ( E a ) is 3.55eV, and the maximum temperature for data storage for 10 years is 109.4°C.

Embodiment 3

[0031] Basically the same as Example 1, the difference is that in the sputtering process, the sputtering power of the alloy Zn target is controlled to be 3W, and the alloy Ge 2 Sb 2 Te 5 The sputtering power of the target was 75W, the sputtering time was 200 seconds, and the Zn content (at%) in the prepared film components was 8.13%.

[0032] The prepared film was tested for in-situ resistance performance, and the test results were as follows: figure 1 with figure 2 shown, from figure 1 with figure 2 It can be seen that the performance index of the thin film prepared in Example 3 is as follows: crystallization temperature ( T c ) is 196℃, and the crystallization activation energy ( E a ) is 3.66eV, and the maximum temperature for data storage for 10 years is 120.2°C.

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Abstract

The invention discloses a Zn-doped Ge2Sb2Te5 phase-change storage film material and a preparation method of the material. The Zn-doped Ge2Sb2Te5 phase-change storage film material is characterized in that the material has a chemical structural formula of Znx(Ge2Sb2Te5)100-x, wherein x is larger than 0 and smaller than 20. The preparation method comprises: selecting a quartz plate or a silicon oxide plate as a substrate in a magnetron sputtering coating system; mounting a Zn target in a magnetron DC sputtering target; mounting a Ge2Sb2Te5 target in a magnetron radio sputtering target; pumping air in a magnetron sputtering room to 1.6*10<-4>Pa; introducing high-purity argon gas until the pressure rises to 0.3Pa; controlling the sputtering power of the Zn target to 3 to 7W, and the sputtering power of the Ge2Sb2Te5 target to 75 to 130W; sputtering and coating at room temperature for 200 seconds to obtain the deposited phase-change storage film material; and placing the film sample in a quick annealing furnace to carry out annealing treatment to obtain the Zn-doped Ge2Sb2Te5 phase-change storage film material after thermal treatment. The Zn-doped Ge2Sb2Te5 phase-change storage film material provided by the invention has the advantages of high crystallization temperature, high thermal stability, high crystallization speed, long service life and low power consumption.

Description

technical field [0001] The invention relates to the technical field of phase-change storage materials, in particular to a Zn-doped Ge 2 Sb 2 Te 5 Phase change memory thin film material and preparation method thereof. Background technique [0002] In recent years, with the rapid development of mobile communication technology and portable electronic products, the market has put forward higher requirements for the performance indicators of semiconductor memory: small size, low power consumption, low cost, fast read and write speed, and non-destructive Volatile (i.e. information remains after power failure). As the current mainstream non-volatile storage technology, flash memory (Flash Memory) based on floating gate technology has achieved great commercial success, and it is widely used in discrete and embedded chips. However, as the next generation of non-volatile memory, "flash memory" technology has disadvantages such as slow writing speed, high writing voltage, and limit...

Claims

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Application Information

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IPC IPC(8): H01L45/00C23C14/35C23C14/06
Inventor 聂秋华王国祥沈祥陈飞飞付晶徐铁峰戴世勋
Owner NINGBO UNIV
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