Manganese alloy target material and its manufacturing method

A manufacturing method, manganese alloy technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem of not proposing a solution to target brittleness, manganese alloy target material is difficult to prepare in batches, and the fracture strength is low and other problems to achieve the effect of high density, precise composition and excellent performance

Inactive Publication Date: 2013-01-16
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the current methods of preparing the manganese alloy target used in the world, in fact no solution is proposed to solve the brittleness of the tar

Method used

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  • Manganese alloy target material and its manufacturing method
  • Manganese alloy target material and its manufacturing method
  • Manganese alloy target material and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Prepare MnPt72.2 manganese alloy sputtering target, comprising the following steps:

[0038] (1) 3 kg of domestically produced manganese flakes with a purity of 99.99% were subjected to three repetitions of electron beam melting under an inert gas atmosphere. The obtained manganese ingot 850g is preserved under inert gas environment;

[0039] (2) Manganese ingots and Pt blocks with a purity of 99.99% are made into an intermediate alloy with a manganese content of 60% (mass%, the following alloy contents are all mass ratios), melted by vacuum induction melting in an inert gas environment, and cast The mold is a copper mold;

[0040] (3) Polish the surface of the master alloy, and take about 0.5g of chips from the upper, middle and lower sections of the ingot to analyze its manganese content by ICP-OES (Inductively Coupled Plasma Optical Emission Spectrometer). The results are shown in Table 1 below . Take the average value of 53.7% as the manganese content of the mast...

Embodiment 2

[0052] Prepare MnPd25.6 manganese alloy sputtering target, comprising the following steps:

[0053] (1) 5 kg of manganese flakes with a purity of 99.999% were subjected to three repetitions of electron beam melting in a vacuum atmosphere. Manganese ingots obtained;

[0054] (2) Manganese ingots and Pd blocks with a purity of 99.999% are made into an intermediate alloy with a manganese content of 85%, and vacuum induction melting is carried out in an inert gas environment;

[0055] (3) About 0.5 g of chips were taken from the upper, middle and lower sections of the ingot to analyze the manganese content by ICP-OES. The results are shown in Table 3 below. Take the average value of 81.2% as the manganese content of the master alloy, and add Pd blocks to make the Pd content after batching meet the requirements of the finished product;

[0056] Table 3. Manganese content in different parts of the master alloy

[0057] Alloy parts Upper (%) Central (%) Lower part ...

Embodiment 3

[0065] Prepare the MnIr50 manganese alloy sputtering target, comprising the following steps:

[0066] (1) Manganese flakes with a purity of 99.9% were subjected to electron beam melting twice under an inert gas atmosphere. The obtained manganese ingots are preserved under an inert gas environment;

[0067] (2) Manganese ingots and Ir powder with a purity of 99.9% are formulated into a master alloy with a manganese content of 65%, and the master alloy ingot is melted and cast by electron beam melting under vacuum;

[0068] (3) Remove the outer skin of the master alloy, and take about 0.5 g of chips from the upper, middle and lower sections of the ingot to analyze the manganese content by ICP-OES. The results are shown in Table 5 below. Take the average value of 55.2% as the manganese content of the master alloy, and add Ir blocks to make the Ir content after batching meet the requirements of the finished product;

[0069] Table 5. Manganese content in different parts of the m...

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Abstract

The invention relates to a manganese alloy sputtering target material and its manufacturing method. The target material is made of one or more of Pd, Pt, Ir, Au, Ru, Os, Rh and Re, and Mn, the mass content of Mn in the alloy is 2-80%, the deviation between the content of Mn in the alloy and a nominal composition is -0.2%-0.2% by mass, the content of O in the target material is below 200ppm, the purity of the target material is 99.9%-99.999%, the lowest surface roughness Ra is 0.8mum, the warp is below 0.1mm, and the target material has a fine and uniform structure. The target material has the advantages of accurate and uniform components, high compactness, accurate dimension and high surface quality; and the manganese alloy sputtering target material having excellent performances is prepared through adopting a melting technology and a machining process to prepare target materials of the alloy system in a low-cost and large-scale manner in a shortest possible flow, and overcoming a material preparation difficulty easily appearing in the preparation process of the alloy and a processing difficulty brought by high alloy crispness.

Description

technical field [0001] The invention relates to a manganese alloy sputtering target and its manufacturing method, in particular to a manganese alloy sputtering target with low gas content, high purity, high density, precise size and high surface quality and its manufacturing method, which can form high Manganese alloy sputtering targets for thin films of high quality. Background technique [0002] With the development of information society, information records become more and more important, and tend to develop in the direction of large capacity, high density, small volume and high stability. At present, the mainstream information recording device is the computer hard disk, and the magnetic recording of the hard disk is also developing with higher recording density and smaller volume. The storage capacity of a single hard disk of the most advanced commercial computer has reached the order of Tb. As the material of the regenerative magnetic head needs to be more and more ad...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14
Inventor 范亮王欣平陈明江轩熊晓东
Owner GRIKIN ADVANCED MATERIALS
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