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Azo molecule ternary electricity storage material at center of diaryl ketone and preparation and application thereof

A diaryl ketone and storage device technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of remote production and application, the cumbersome preparation process of stable devices, etc., and achieve mature device production technology and great value. , synthesizing simple effects

Active Publication Date: 2013-02-20
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But unfortunately, although the above-mentioned nanowires can realize the change of three phase states by applying a bias voltage and then realize the ternary data storage, the stability of the material and the cumbersomeness of the device preparation process make it far from a real device. Production and application are still far away

Method used

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  • Azo molecule ternary electricity storage material at center of diaryl ketone and preparation and application thereof
  • Azo molecule ternary electricity storage material at center of diaryl ketone and preparation and application thereof
  • Azo molecule ternary electricity storage material at center of diaryl ketone and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Preparation of a novel azo molecular ternary electrical storage material with a diaryl ketone as the central group of the general formula I

[0035]

[0036] Among them, DAK is 3,3'-dibenzoyl, 4,4'-dibenzoyl or 2,7-fluorenone; R is N,N-di-C 1 ~C 6 Straight-chain alkylamino, N,N-diphenylamino or hydroxyl.

[0037] When R is N,N-dimethylamino and DAK is 3,3'-dibenzoyl, the synthesis steps are as follows:

[0038] (1) Under a nitrogen atmosphere, a solution of 3,3'-dinitrobenzophenone (0.95g, 3.5mmol) and tin dichloride (7.9g, 3.5mmol) in absolute ethanol (20mL) was placed at 70°C Heating reaction under low temperature for 45min, the obtained transparent orange solution was cooled and poured into crushed ice, neutralized to pH 8 with 10wt% sodium bicarbonate solution, the obtained milky white solution was extracted several times with hot ethyl acetate, and the organic phase was successively washed with water , washed with saturated brine, dried with anhydrous potassium...

Embodiment 2

[0166] Taking the compound A1 obtained in Example 1 as an electrical storage active material as an example, a sandwich structure electrical storage device was prepared, and the manufacturing process was as follows: the ITO conductive glass was cleaned with water, acetone, and isopropanol in ultrasonic waves for 10 to 30 minutes, and placed It is used as an organic material deposition substrate in a vacuum coating machine; take 10-30 mg of compound A1 in a quartz crucible, place it in a molybdenum boat of a vacuum coating machine, and evacuate until the internal pressure of the coating machine is less than 3×10 -3 Pa began to vapor-deposit organic molecules, and the thickness of the organic film was controlled between 20 and 150nm by a film thickness detector; A certain amount of aluminum wire is suspended on the tungsten wire of the vacuum coating machine. When the vacuum degree in the vacuum coating machine is less than 8×10 -3 At Pa, start to heat the tungsten wire to vapor-...

Embodiment 3

[0168] image 3 It shows the change of the current when the organic molecule C1 is used as the electroactive material to prepare a sandwich structure device, and a continuous voltage is applied between the upper and lower electrodes of the device for scanning. When a continuous voltage from 0 to –3V is applied to a point on the device, the current through the device undergoes two instantaneous jumps at –1.05V and –1.81V, indicating that the device has experienced a transition from a low conductivity state (“0” or OFF state) to an intermediate conducting state (“1” or ON1 state) and then to a high conducting state (“2” or ON2 state) transition (first scan). In the subsequent scan from 0 to -3V, the memory cell still maintains its high conduction state (second scan). The third scan is a 0 to –1.5V scan of another memory cell with a threshold voltage of –1.04V. During the subsequent sweep from 0 to –1.5V, the cell remains in the intermediate conduction state (“1”) even with pow...

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Abstract

The invention discloses an azo molecule ternary electricity storage material with diaryl ketone as a central radical and preparation and application thereof. A structural formula of azo molecules is as follows. In the formula, DAK is 3, 3'-dibenzoyl, 4, 4'-dibenzoyl or 2, 7-fluorenone; and R is N, N-two C1-C6 linear chain alkyl amino, N, N-diphenyl amino or hydroxyl. The azo molecules are simple in synthetic process, the azo molecules are made into a ternary data storage device of a sandwich structure of bottom electrodes / organic films / top electrodes, manufacturing process is mature, and the device is stable in performance. Compared with binary data storage based on 0 and 1, data storage content in unit intensity is increased exponentially, and the azo molecule ternary electricity storage material has enormous value in ultrahigh density data storage application in the future.

Description

technical field [0001] The invention relates to an electrical storage material, in particular to an azo molecular ternary electrical storage material with diaryl ketone as the central group, and its preparation and application. Background technique [0002] Due to the miniaturization of electronic devices and the explosive development of information technology, the research on large-capacity information storage devices has become a problem that scientists need to solve urgently. As early as 1999, the U.S. Defense Advanced Research Projects Agency had proposed an ultra-high-density data storage plan, which required a data storage capacity greater than 10 12 bits / cm 2 In order to meet the needs of the development of the information age. In order to achieve ultra-high-density data storage, there are usually two feasible strategies: From the perspective of device fabrication, although the limitation of the fabrication process at the nanometer scale limits the further reduction...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C245/08C07C245/10H01L51/40H01L27/28
Inventor 路建美缪世峰李华
Owner SUZHOU UNIV
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